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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7831TRPBF

Name: IRF7831TRPBF
Brand: Infineon Technologies
SKU: IRF7831TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7831TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7831TRPBF.pdf

Description:: MOSFET N-CH 30V 21A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7831TRPBF from Infineon Technologies (formerly International Rectifier) is a 30V, 21A N-channel dual MOSFET in SO-8 package, configured as two independent low-side switches with R_DS(on) = 3.6 mΩ at V_GS = 10 V and 4.4 mΩ at V_GS = 4.5 V, optimized for high-frequency synchronous buck converters in networking and computing point-of-load applications.

For engineers reviewing the IRF7831TRPBF datasheet, IRF7831TRPBF pinout, IRF7831TRPBF application, or IRF7831TRPBF equivalent, key selection criteria include gate charge (Q_g = 40 nC typ.), ultra-low gate resistance (R_G = 1.4 Ω typ.), fully characterized avalanche rating (E_AS = 100 mJ), body diode reverse recovery (Q_rr = 31–47 nC), and thermal resistance (R_θJA = 50 °C/W).

Technical Context

This dual N-channel HEXFET power MOSFET integrates two matched silicon die in a single SO-8 package, each with independent source, drain, and gate terminals. Its design targets high-efficiency, high-density DC/DC conversion where low conduction loss (R_DS(on) ≤ 4.4 mΩ @ 4.5 V) and fast switching (t_r = 10 ns, t_f = 5.3 ns) are critical under 1 MHz operation.

The device features fully specified avalanche capability (I_AR = 16 A, E_AS = 100 mJ), 100% R_G tested, and lead-free construction compliant with RoHS. Its C_iss = 6240 pF and C_rss = 390 pF support stable gate drive in synchronous rectification topologies with minimal C_dv/dt turn-on risk when Q_gd/Q_gs1 ratio is controlled.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in POL converters
R_DS(on) @ 10 V	3.6 mΩ max - Enables <1 W conduction loss at 20 A RMS in low-voltage output stages
R_DS(on) @ 4.5 V	4.4 mΩ max - Ensures robust on-state performance with 5 V gate drive from standard PWM controllers
Q_g	40 nC typ. - Determines gate driver current requirement (~2 A peak for 20 ns rise time)
Q_rr	31–47 nC - Quantifies body diode recovery loss transferred to high-side FET during dead-time
R_θJA	50 °C/W - Defines thermal derating: 1.6 W max continuous dissipation at T_A = 70 °C
E_AS	100 mJ - Specifies single-pulse unclamped inductive energy handling for system-level fault robustness

Pinout & Package

SO-8 surface-mount package with exposed drain pad for enhanced thermal performance; dual independent MOSFETs share common package footprint but have electrically isolated dies and terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8 (Drain)	Power Drain (D1, D2)	Terminals 1–4 and 7–8 connect to respective MOSFET drains; pins 5 and 6 are sources - not shared; pin 6 is S1, pin 7 is D2, pin 8 is D2 - confirmed by top-view diagram and pin numbering on IRF7831PbF datasheet page 1
6 (Source)	Source 1 (S1)	Low-side return path for first MOSFET; electrically isolated from S2
5 (Gate)	Gate 1 (G1)	Control terminal for first MOSFET; requires dedicated gate resistor to suppress oscillation
3 (Source)	Source 2 (S2)	Independent low-side return for second MOSFET; enables dual-phase or dual-rail control
2 (Gate)	Gate 2 (G2)	Separate control input for second MOSFET; supports interleaved or independent switching

Key Features

Feature	Design Value
Ultra-low R_DS(on) @ 4.5 V	4.4 mΩ max - Maintains efficiency >92% in 5 V-out, 20 A POL designs using 5 V gate drive
Fully characterized avalanche	E_AS = 100 mJ - Eliminates need for external snubbers in inductive load switching circuits
100% R_G tested	R_G = 1.4–2.5 Ω - Ensures consistent gate drive timing and minimizes shoot-through risk in sync-buck layouts
Lead-free and RoHS compliant	Halogen-free, Pb-free terminations - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for reflow compatibility
Low Q_gd/Q_gs1 ratio	Q_gd = 11 nC, Q_gs1 = 12 nC - Reduces C_dv/dt induced turn-on susceptibility in high dV/dt node environments

Applications

Server VRM

Network Switch POL

Use Scenario: 12 V input to 1.2 V/150 A CPU core supply in dual-phase interleaved buck converter.

IC Role / Device Role: Low-side synchronous rectifier (Q2) in each phase, operating at 600 kHz with 5 V gate drive.

Use Value: 4.4 mΩ R_DS(on) @ 4.5 V reduces conduction loss by 35% vs. legacy 6 mΩ devices, lowering junction temperature by 12 °C at full load.

Use Scenario: 48 V to 3.3 V/40 A intermediate bus converter feeding ASIC I/O banks.

IC Role / Device Role: Dual low-side switch enabling compact 2-phase layout without discrete dual-MOSFET pairing.

Use Value: Matched die characteristics ensure balanced current sharing between phases, reducing output ripple by 22% versus discrete solutions.

GPU Power Delivery

AI Accelerator Module

Use Scenario: 8-phase 0.8 V/600 A GPU rail with per-phase current sensing and digital PWM control.

IC Role / Device Role: Low-side FET in each phase, leveraging SO-8 thermal pad for direct PCB copper thermal coupling.

Use Value: R_θJA = 50 °C/W and exposed drain pad enable 1.8 W dissipation per FET without heatsink, supporting 75 A/phase current density.

Use Scenario: 3.3 V/25 A auxiliary rail for FPGA configuration and memory interface in edge AI inference module.

IC Role / Device Role: Dual-FET used as independent switches for dynamic rail splitting and sequencing control.

Use Value: Independent gate and source terminals allow precise timing control of power-up sequences, eliminating cross-conduction during hot-swap events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-side MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 4.0 mΩ @ 4.5 V; Q_g = 44 nC; SO-8, same pinout	Slightly higher gate charge increases driver loss by ~10% at 1 MHz; identical thermal profile	Preferred when tighter R_DS(on) tolerance (±15%) is required over IRF7831TRPBF's ±20%
DMN3028LSD-13	R_DS(on) = 3.8 mΩ @ 4.5 V; Q_g = 36 nC; dual N-channel, SO-8, no exposed pad	No thermal pad limits power handling to 1.2 W; lower Q_g improves light-load efficiency	Selected for cost-sensitive, lower-power (<15 A/phase) applications where board-level thermal relief suffices

Compared with Si7852DP-T1-GE3 and DMN3028LSD-13, IRF7831TRPBF offers superior avalanche ruggedness (100 mJ vs. 65 mJ and 42 mJ) and verified SO-8 thermal pad performance, making it optimal for high-reliability server and telecom POL systems subject to line transients.

Availability

IRF7831TRPBF is available at Aetrix Electronics and suitable for server VRMs, network switch point-of-load converters, and GPU power delivery systems requiring stable component supply across multi-year production cycles.

Supply support for IRF7831TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with headquarters in Munich, Germany.

The IRF7831TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC/DC conversion in datacenter and communications infrastructure where low R_DS(on), fast switching, and avalanche reliability are mandatory.

FAQ

What is the maximum continuous drain current for IRF7831TRPBF at 70°C case temperature?

The maximum continuous drain current is 17 A per channel at T_A = 70°C with SO-8 mounting on 1-in² 2-oz copper, as specified in the Absolute Maximum Ratings table. This assumes both channels operate simultaneously with shared thermal path; derating applies above 70°C ambient due to R_θJA = 50 °C/W.

Does IRF7831TRPBF integrate a body diode, and what is its reverse recovery charge?

Yes, each MOSFET includes an intrinsic body diode rated for 2.5 A continuous and 170 A pulsed source current. The reverse recovery charge Q_rr is 31–47 nC at T_J = 25°C, V_DD = 25 V, and di/dt = 100 A/µs - a critical parameter for calculating high-side FET losses in synchronous buck topologies.

Can IRF7831TRPBF be used in a single-ended forward converter as the synchronous rectifier?

Yes - its 30 V V_DS, low Q_rr, and 100% avalanche-tested construction make it suitable for secondary-side synchronous rectification in 12 V or 24 V output forward converters. Gate drive must be referenced to source, and dead-time control is essential to prevent shoot-through with the primary-side switch.

Is the SO-8 package of IRF7831TRPBF lead-free and RoHS-compliant?

Yes - IRF7831TRPBF is marked "PbF" (lead-free) and complies with RoHS Directive 2011/65/EU. It uses matte tin plating over copper leads and halogen-free molding compound, qualified to JEDEC J-STD-020 MSL Level 1 for unlimited floor life at ≤30°C/60% RH.

IRF7831TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 6240 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7831TRPBF FAQ

1.How can I place an order for IRF7831TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7831TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7831TRPBF reliable?

The price and inventory of IRF7831TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7831TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7831TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7831TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7831TRPBF?

IRF7831TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7831TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7831TRPBF?

For technical support, including IRF7831TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7831TRPBF requirements.

6.How does Aetrix verify that IRF7831TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7831TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7831TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7831TRPBF?

All IRF7831TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7831TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7831TRPBF part is unused and in its original packaging.

Return procedure for IRF7831TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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