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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7832PBF

Name: IRF7832PBF
Brand: Infineon Technologies
SKU: IRF7832PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7832PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7832PBF.pdf

Description:: MOSFET N-CH 30V 20A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7832PBF from Infineon Technologies is a 30V, 16A N-channel HEXFET Power MOSFET in SO-8 package, optimized as a synchronous rectifier FET in isolated DC-DC converters and as a control FET in notebook CPU power stages. It delivers 3.1 mΩ R_DS(on) at V_GS = 10 V, 34 nC total gate charge, and fully characterized avalanche capability up to 500 mJ.

For engineers reviewing the IRF7832PBF datasheet, IRF7832PBF pinout, IRF7832PBF application, or IRF7832PBF equivalent, key selection criteria include low R_DS(on) at 4.5 V (3.7 mΩ typ), ultra-low gate impedance (1.2 Ω), body diode reverse recovery charge (39–59 nC), and SO-8 thermal performance (R_θJA = 50 °C/W).

Technical Context

This MOSFET uses planar silicon HEXFET architecture with optimized cell pitch and trench-assisted source contact design to achieve sub-4 mΩ on-resistance while maintaining robust 30 V breakdown voltage (BVDSS = 30 V, temp coefficient 0.023 V/°C). Its gate threshold voltage (1.39–2.32 V) and low Q_gd/Q_gs1 ratio minimize C_dv/dt turn-on risk in high-dV/dt synchronous buck and forward converter topologies.

Designed for high-frequency switching (f < 1 MHz), it features fully characterized unclamped inductive switching (UIS) behavior, 100% R_g tested, and specified reverse recovery parameters (t_rr = 41–62 ns, Q_rr = 39–59 nC) critical for minimizing shoot-through loss in dual-FET synchronous rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage compatible with 24 V input DC-DC systems and 12 V/19 V notebook rails.
R_DS(on) max @ V_GS = 10 V	4.0 mΩ - Enables ≤0.64 W conduction loss at 16 A continuous drain current (T_A = 25°C).
Q_g total	34 nC - Determines gate drive power (P_drive ≈ Q_g × V_g × f); enables efficient 500 kHz–1 MHz operation with standard PWM controllers.
Q_rr	39–59 nC - Directly impacts shoot-through loss in synchronous rectifiers; lower than typical SO-8 30 V FETs by ~25%.
R_θJA	50 °C/W - Limits junction temperature rise to ≤80°C above ambient at 1.6 W dissipation in standard PCB layout.
E_AS	500 mJ - Confirmed single-pulse avalanche energy at I_AS = 16 A, supporting robustness against transient overvoltage in non-isolated converters.

Pinout & Package

IRF7832PBF is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. The package complies with JEDEC MS-012AC and supports lead-free reflow soldering (peak 260°C).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Parallel-connected internal drain terminals tied to exposed pad - primary current path and thermal conduction path to PCB copper.
6	Gate (G)	Control terminal; low 1.2 Ω gate resistance minimizes ringing and improves EMI in high-dV/dt environments.
Source (S)	Source (S)	Internal connection of pins 1–5 and 7–8 to common source node; provides return path for load current and gate drive reference.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	3.7 mΩ typ - Enables efficient operation directly from 5 V or 4.5 V gate drivers without level-shifting.
Fully characterized avalanche	500 mJ E_AS at 16 A - Eliminates need for external snubbers in hard-switched topologies with inductive loads.
Low Q_gd/Q_gs1 ratio	12 nC / 8.6 nC ≈ 1.4 - Reduces susceptibility to spurious turn-on during high dV/dt transitions at the switching node.
100% R_g tested	1.2–2.4 Ω - Ensures consistent gate drive timing and predictable switching loss across production lots.

Applications

Server VRM Power Stage

Notebook CPU Core Supply

Use Scenario: High-current, multi-phase buck converter delivering up to 100 A to server CPUs under dynamic load transients.

IC Role / Device Role: Control FET (high-side switch) operating at 300–600 kHz with 10 V gate drive.

Use Value: 3.1 mΩ R_DS(on) reduces conduction loss by >15% vs. legacy 5 mΩ SO-8 FETs, improving full-load efficiency by 0.8–1.2%.

Use Scenario: Dual-phase 19 V input to 1.0–1.3 V output converter powering mobile Intel Core i-series processors.

IC Role / Device Role: Synchronous rectifier (low-side FET) driven by integrated controller with 4.5 V gate bias.

Use Value: 3.7 mΩ R_DS(on) at 4.5 V ensures <0.3 W loss per phase at 25 A peak, enabling compact thermal design without heatsinks.

Isolated Telecom DC-DC

Industrial PoE PSE Controller

Use Scenario: Forward converter with active clamp in 48 V telecom systems delivering 12 V/20 A to baseband processing modules.

IC Role / Device Role: Secondary-side synchronous rectifier replacing Schottky diodes.

Use Value: Q_rr = 39 nC and t_rr = 41 ns reduce body-diode conduction loss and eliminate reverse recovery spikes, lowering EMI filter cost by 30%.

Use Scenario: IEEE 802.3at-compliant Power Sourcing Equipment delivering 30 W over Cat5e cable with 4-pair power injection.

IC Role / Device Role: Primary-side switching FET in flyback topology with 24 V auxiliary supply.

Use Value: 30 V V_DSS and 500 mJ E_AS withstand 60 V surge events during cable hot-plug, eliminating need for TVS clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 3.3 mΩ @ 10 V; Q_g = 32 nC; SO-8 but no exposed drain pad	Lower conduction loss but higher thermal resistance (R_θJA = 62 °C/W) limits sustained 16 A operation	Preferable for space-constrained layouts where board-level thermal relief is limited
DMN3028LSD-13	R_DS(on) = 2.8 mΩ @ 10 V; Q_g = 41 nC; dual-N in SO-8 package	Higher gate charge increases drive loss at >300 kHz; dual configuration saves footprint but requires matched pairing	Better for cost-sensitive dual-FET designs where gate drive overhead is acceptable

Compared with Si7852DP-T1-GE3 and DMN3028LSD-13, IRF7832PBF offers optimal balance of low R_DS(on), controlled Q_g, and proven avalanche ruggedness - making it preferred for high-reliability 500 kHz+ synchronous rectifiers where thermal margin and transient robustness are critical.

Availability

IRF7832PBF is available at Aetrix Electronics and suitable for server VRMs, notebook CPU power stages, isolated telecom DC-DC converters, and industrial PoE PSE controllers requiring stable component supply and long-term lifecycle support.

Supply support for IRF7832PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF HEXFET® Power MOSFET product line targets high-efficiency, high-frequency power conversion in computing, telecom, and industrial applications - emphasizing low R_DS(on), fast switching, and ruggedness under repetitive stress conditions.

FAQ

What is the maximum continuous drain current for IRF7832PBF at 70°C ambient?

The maximum continuous drain current is 16 A at T_A = 70°C with V_GS = 10 V, assuming SO-8 mounting on a 1-in² 2-oz copper PCB with 2 oz internal ground plane. Derating begins at 0.02 A/°C above 70°C ambient, reaching 2.5 A at 150°C ambient due to thermal limits.

Does IRF7832PBF require a gate resistor for stability in 500 kHz synchronous buck converters?

Yes - a 2.2–4.7 Ω gate resistor is recommended between driver output and pin 6 (Gate) to dampen ringing caused by trace inductance and low R_g (1.2 Ω). This prevents overshoot beyond ±20 V V_GS rating and suppresses false turn-on during high dV/dt transitions at the switching node.

Can IRF7832PBF be used as a replacement for IRF7807 in existing designs?

No - IRF7807 has 7.0 mΩ R_DS(on) and 20 nC Q_g, while IRF7832PBF has 3.1 mΩ and 34 nC. Substituting it without adjusting gate drive strength and layout parasitics may cause excessive switching loss or oscillation. Layout review and driver capability validation are mandatory before replacement.

Is the body diode of IRF7832PBF suitable for reverse recovery in discontinuous conduction mode (DCM)?

Yes - its body diode is fully characterized with t_rr = 41–62 ns and Q_rr = 39–59 nC at I_F = 16 A, making it suitable for DCM operation in flyback and LLC resonant converters. However, soft-recovery diodes remain preferable for zero-voltage switching (ZVS) topologies to minimize turn-on loss.

IRF7832PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.32V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4310 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 155°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7832PBF FAQ

1.How can I place an order for IRF7832PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7832PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7832PBF reliable?

The price and inventory of IRF7832PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7832PBF is usually 5 days.

3.What payment methods are accepted for IRF7832PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7832PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7832PBF?

IRF7832PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7832PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7832PBF?

For technical support, including IRF7832PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7832PBF requirements.

6.How does Aetrix verify that IRF7832PBF is sourced from the original manufacturer or authorized distributors?

All IRF7832PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7832PBF meets industry standards.

7.What is the process for return or replacement of IRF7832PBF?

All IRF7832PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7832PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7832PBF part is unused and in its original packaging.

Return procedure for IRF7832PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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