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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7832TR

Name: IRF7832TR
Brand: Infineon Technologies
SKU: IRF7832TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7832TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7832TR.pdf

Description:: MOSFET N-CH 30V 20A 8-SOIC

Quantity:: RFQ Add To RFQ list

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Inventory:6,755

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Product details

Overview

IRF7832TR from Infineon Technologies is a 30V, 16A N-channel SO-8 packaged HEXFET Power MOSFET optimized as a synchronous rectifier in isolated DC-DC converters and as a control FET in notebook CPU power stages. It delivers 3.1 mΩ R_DS(on) at V_GS = 10 V, 34 nC total gate charge, and 1.2 Ω gate resistance - enabling high-efficiency, high-frequency switching in 12–24 V input systems.

For engineers reviewing the IRF7832TR datasheet, IRF7832TR pinout, IRF7832TR application, or IRF7832TR equivalent, key selection criteria include its ultra-low R_DS(on) at 4.5 V (4.0 mΩ max), fully characterized avalanche rating (E_AS = 500 mJ), 100% R_g tested specification, and SO-8 thermal performance (R_θJA = 50 °C/W).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with integrated body diode, designed for hard-switched synchronous rectification where low conduction loss and controlled reverse recovery (Q_rr = 39–59 nC, t_rr = 41–62 ns) are critical to minimize shoot-through and cross-conduction losses.

Its gate threshold voltage (V_GS(th) = 1.39–2.32 V) and steep transconductance (g_fs = 77 S) support robust turn-on with 4.5 V logic-level drive, while low Q_gd/Q_gs1 ratio mitigates C_dv/dt induced turn-on in high-dV/dt node applications like active-clamp forward or LLC secondary-side switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 24 V nominal input rails with 20 % margin for transient overvoltage
R_DS(on) max @ 10 V	4.0 mΩ - enables ≤0.64 W conduction loss at 16 A continuous drain current
Q_g	34 nC - determines gate driver power requirement and switching speed in 300–1000 kHz converters
I_D @ T_A = 25°C	16 A - defines maximum continuous output current capability in SO-8 package with standard PCB layout
R_θJA	50 °C/W - sets junction-to-ambient thermal rise under natural convection, limiting safe operating area
Q_rr	39–59 nC - directly impacts energy loss transferred to primary-side switch during body diode commutation
E_AS	500 mJ - specifies single-pulse avalanche ruggedness for unclamped inductive switching stress

Pinout & Package

IRF7832TR is housed in a surface-mount SO-8 (Small Outline-8) package with exposed drain pad for enhanced thermal dissipation. Pin 1 is Gate, Pins 2–4 and 6–8 are Drain (internally paralleled), Pin 5 is Source.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires <2.32 V threshold to initiate conduction; low R_g (1.2–2.4 Ω) minimizes gate oscillation risk
2,3,4,6,7,8	Drain	High-side switching node connection; all pins internally tied to drain metallization and thermal pad
5	Source	Return path for load current; referenced to ground or synchronous rectifier output rail

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	4.0 mΩ max - enables efficient operation directly from 5 V or 4.5 V controller outputs without level-shifting
Fully characterized avalanche	500 mJ E_AS - guarantees reliable operation under unclamped inductive switching in synchronous buck or flyback topologies
100% R_g tested	1.2–2.4 Ω - ensures consistent gate drive timing and eliminates batch variation in switching behavior
Low Q_gd/Q_gs1 ratio	Q_gd = 12 nC, Q_gs1 = 8.6 nC - reduces susceptibility to dV/dt-induced false turn-on in high-side synchronous rectifier position
Optimized body diode	t_rr = 41–62 ns, Q_rr = 39–59 nC - minimizes reverse recovery loss and associated voltage spikes in secondary-side rectification

Applications

Server VRM Power Stage

Notebook CPU Core Supply

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5 V to Xeon or EPYC processors at up to 200 A per rail.

IC Role / Device Role / Timing Role: Control FET (high-side switch) operating at 300–600 kHz with 4.5–5 V gate drive from multiphase PWM controller.

Use Value: 3.1 mΩ R_DS(on) at 10 V reduces conduction loss by >25 % vs. legacy 5 mΩ devices, improving full-load efficiency by ~0.8 %.

Use Scenario: Dual-phase 12 V input buck regulator powering Intel Core i7/i9 CPUs in thin-and-light notebooks.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET) in each phase, driven complementarily to control FET.

Use Value: Low Q_rr and fast t_rr suppress voltage overshoot during dead-time commutation, reducing EMI and eliminating need for snubbers.

Isolated Telecom DC-DC

Industrial PoE++ PSE

Use Scenario: 48 V input, 12 V/20 A isolated forward converter in networking line cards with tight thermal constraints.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes to improve efficiency and reduce heat sink size.

Use Value: 4.0 mΩ R_DS(on) at 4.5 V allows direct drive from transformer-coupled gate signal, eliminating auxiliary bias winding.

Use Scenario: 57 V PoE++ (IEEE 802.3bt Type 4) power sourcing equipment delivering up to 90 W to remote devices.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward or half-bridge topology handling 1.2 A continuous current at 250 kHz.

Use Value: 30 V V_DS rating provides 2× margin over 57 V PoE open-circuit voltage, ensuring long-term reliability under surge conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 3.0 mΩ @ 10 V; Q_g = 37 nC; SO-8 with enhanced thermal pad	Higher current density but slightly higher gate charge increases driver loss at >1 MHz	Preferred for new designs targeting <3 mΩ and improved R_θJA (42 °C/W)
IPB036N10N5	R_DS(on) = 3.6 mΩ @ 10 V; TO-263 package; 100 V rating	Over-specified voltage rating adds cost and capacitance; unsuitable for 24 V systems requiring minimal C_iss	Only suitable if 100 V rating and TO-263 thermal mass are required for industrial derating

Compared with SiR872DP-T1-GE3 and IPB036N10N5, IRF7832TR offers optimal balance of low R_DS(on), moderate Q_g, and SO-8 compatibility for space-constrained 24–48 V telecom and computing power supplies - avoiding unnecessary voltage overhead or thermal package complexity.

Availability

IRF7832TR is available at Aetrix Electronics and suitable for server VRMs, notebook CPU power stages, isolated telecom DC-DC converters, and PoE++ PSE designs requiring stable component supply and long-lifecycle support.

Supply support for IRF7832TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7832TR belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, networking, and communications infrastructure.

FAQ

What is the maximum continuous drain current for IRF7832TR at 70°C ambient?

The IRF7832TR supports 16 A continuous drain current at T_A = 25°C and 10 A at T_A = 70°C when mounted on a standard 1-in² 2-oz copper PCB with 2 oz internal layers. This derating reflects its R_θJA = 50 °C/W and maximum T_J = 150°C rating.

Can IRF7832TR be driven directly by a 3.3 V microcontroller GPIO?

No - its gate threshold voltage range is 1.39–2.32 V, but full enhancement requires ≥4.5 V to achieve rated R_DS(on). At 3.3 V, R_DS(on) rises sharply (>15 mΩ), increasing conduction loss significantly. A dedicated gate driver or level shifter is required for reliable operation.

Does IRF7832TR include integrated ESD protection on the gate?

No - the device has no built-in gate ESD protection diodes. Its absolute maximum V_GS rating is ±20 V, and gate oxide is susceptible to damage from static discharge. External 10–22 Ω series gate resistor and TVS clamping are recommended in production layouts.

How does IRF7832TR's body diode performance compare to discrete Schottky rectifiers?

Its body diode has V_SD = 1.0 V and t_rr = 41–62 ns, outperforming 45 V Schottkys in forward voltage at high current but exhibiting slower recovery. In synchronous rectification, it eliminates reverse recovery spikes only when actively commutated - unlike Schottkys, it cannot operate as a passive rectifier without gate control.

IRF7832TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.32V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 4.5 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 4310 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7832TR FAQ

1.How can I place an order for IRF7832TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7832TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7832TR reliable?

The price and inventory of IRF7832TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7832TR is usually 5 days.

3.What payment methods are accepted for IRF7832TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7832TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7832TR?

IRF7832TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7832TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7832TR?

For technical support, including IRF7832TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7832TR requirements.

6.How does Aetrix verify that IRF7832TR is sourced from the original manufacturer or authorized distributors?

All IRF7832TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7832TR meets industry standards.

7.What is the process for return or replacement of IRF7832TR?

All IRF7832TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7832TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7832TR part is unused and in its original packaging.

Return procedure for IRF7832TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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