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Infineon Technologies IRF7832ZTR
- Part No.:
- IRF7832ZTR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7832ZTR.pdf
- Description:
- MOSFET N-CH 30V 21A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,323
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Product details
Overview
IRF7832ZTR from Infineon Technologies is a 30V, 21A N-channel HEXFET Power MOSFET in SO-8 package, optimized as a synchronous rectifier FET in isolated DC-DC converters and notebook CPU power stages. It delivers 3.1 mΩ RDS(on) at VGS = 10 V, 30 nC total gate charge, and fully characterized avalanche capability up to 350 mJ.
For engineers reviewing the IRF7832ZTR datasheet, IRF7832ZTR pinout, IRF7832ZTR application, or IRF7832ZTR equivalent, key selection criteria include low RDS(on) at 4.5 V drive, ultra-low gate impedance (1.2–1.9 Ω), body diode reverse recovery charge (29–44 nC), and SO-8 thermal performance (RθJA = 50 °C/W).
Technical Context
This MOSFET employs planar silicon HEXFET architecture with integral body diode, designed for high-frequency synchronous rectification where low conduction loss and controlled switching behavior are critical. Its gate threshold voltage (1.35–2.35 V) and steep transconductance (80 S typical) enable robust turn-on under low-voltage gate drive.
The device features fully specified unclamped inductive switching (UIS) performance, with single-pulse avalanche energy rated at 350 mJ at TJ = 25°C. Output capacitance (Coss = 840 pF) and reverse transfer capacitance (Crss = 370 pF) are characterized across 0–24 V VDS, supporting accurate loss modeling in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in isolated DC-DC converters |
| RDS(on) max @ 10 V | 3.8 mΩ - Enables ≤0.8 W conduction loss at 21 A RMS in high-current synchronous rectifier paths |
| Qg | 30 nC - Determines gate drive power and switching speed; supports <20 ns turn-off delay with 1 A driver |
| Coss | 840 pF - Sets output energy loss (Eoss ≈ ½ × Coss × VIN²) during hard-switching transitions |
| IAS | 16 A - Avalanche current rating validated for clamped inductive load stress without degradation |
| VGS(th) | 1.35–2.35 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V controller outputs |
| Qrr | 29–44 nC - Directly impacts cross-conduction loss and EMI in synchronous buck/forward converters |
Pinout & Package
IRF7832ZTR is housed in a surface-mount SO-8 package with exposed drain pad for enhanced thermal dissipation. The package complies with JEDEC MS-012AC and supports reflow soldering per IPC/JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7 | Drain (D) | Seven parallel internal drain connections tied to exposed pad - primary current path for high-side or low-side switching; requires thermal pad connection to PCB ground plane |
| 8 | Gate (G) | Control terminal with 1.2–1.9 Ω intrinsic gate resistance - limits dv/dt-induced turn-on risk in high-dV/dt nodes |
| Source (S) | Source (S) | Terminals 1–3 are internally connected to source; provides return path for load current and gate drive reference |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5 V | 4.5 mΩ typical - enables efficient operation directly from 5 V gate drivers in notebook VRMs |
| Fully characterized avalanche | 350 mJ EAS at 25°C - eliminates need for external snubbers in inductive load switching |
| Low Qgd/Qgs1 ratio | 11 nC / 7.9 nC ≈ 1.4 - reduces susceptibility to dV/dt-induced false turn-on in synchronous rectifier position |
| 100% Rg tested | 1.2–1.9 Ω gate resistance - ensures consistent switching timing and driver loading across production lots |
| Body diode trr | 16–24 ns - minimizes dead-time losses and improves light-load efficiency in synchronous topologies |
Applications
| Server VRM Synchronous Rectifier | Notebook CPU Core Power Stage |
|---|---|
Use Scenario: High-current, multi-phase 12 V input → 1 V output conversion in enterprise server voltage regulator modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier FET operating at 300–600 kHz with 5 V gate drive from integrated PWM controller. Use Value: 3.1 mΩ RDS(on) reduces conduction loss by >35% vs. comparable 5 mΩ devices, improving full-load efficiency by 0.8–1.2%. | Use Scenario: Dual-phase 19 V adapter input → 1.05 V core supply for mobile Intel/AMD processors in ultrabooks. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in interleaved buck converter, driven by dedicated gate driver IC. Use Value: 29–44 nC Qrr and 16–24 ns trr minimize shoot-through risk and dead-time penalty, enabling >94% peak efficiency. |
| Isolated Forward Converter Rectifier | Industrial DC-DC Isolated Module |
Use Scenario: 48 V input → 12 V isolated output in telecom power supplies using forward topology with active clamp. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier replacing Schottky diode, operating at 200 kHz with zero-voltage switching assist. Use Value: 30 nC Qg and 840 pF Coss allow precise gate timing control and reduce switching loss by 40% over 40 V Schottky alternatives. | Use Scenario: 24/48 V DC input → 5 V/3.3 V isolated output in DIN-rail mounted industrial power modules. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in flyback or active-clamp forward design, operating at 100–250 kHz. Use Value: Fully characterized 350 mJ avalanche rating ensures reliability during output short-circuit events without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous rectifier MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 2.9 mΩ @ 10 V; Qg = 34 nC; SO-8 with enhanced thermal pad | Higher current density but increased gate drive loss due to +13% Qg | Preferred when board space is constrained and thermal pad layout allows superior heat spreading |
| IPB80N04S4-02 | RDS(on) = 2.0 mΩ @ 10 V; TO-263 package; Qg = 52 nC | Lower RDS(on) but incompatible SO-8 footprint and higher switching loss | Only suitable for new designs accepting larger footprint and requiring <2 mΩ conduction loss |
Compared with SiR872DP-T1-GE3 and IPB80N04S4-02, IRF7832ZTR offers optimal balance of low gate charge (30 nC), proven SO-8 thermal reliability (50 °C/W), and body diode recovery performance (29–44 nC Qrr) for cost-sensitive, high-volume notebook and telecom DC-DC applications.
Availability
IRF7832ZTR is available at Aetrix Electronics and suitable for server VRM synchronous rectifiers, notebook CPU core power stages, and isolated forward converter rectifiers requiring stable component supply and long-term industrial availability.
Supply support for IRF7832ZTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The IRF7832ZTR belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency synchronous rectification in compact DC-DC converters where low RDS(on), fast body diode recovery, and robust avalanche capability are mandatory.
FAQ
What is the maximum continuous drain current for IRF7832ZTR at 70°C ambient?
The maximum continuous drain current is 17 A at TA = 70°C with SO-8 mounting on a standard 1-in² 2-oz copper PCB. This rating assumes no forced airflow and accounts for thermal derating beyond 25°C ambient, based on RθJA = 50 °C/W and TJ(max) = 150°C.
Does IRF7832ZTR support 4.5 V gate drive in synchronous rectifier applications?
Yes - it delivers 4.5 mΩ typical RDS(on) at VGS = 4.5 V, confirmed in Fig. 12 of the datasheet. This enables direct drive from 5 V logic-level controllers without level-shifting, making it suitable for notebook VRMs and low-voltage isolated DC-DC converters.
How is the body diode reverse recovery charge (Qrr) specified for IRF7832ZTR?
Qrr is specified as 29–44 nC at TJ = 25°C, IF = 16 A, di/dt = 500 A/µs, and VDD = 15 V. This value is measured under standardized unclamped inductive test conditions and directly impacts switching loss and EMI in synchronous rectifier configurations.
Is IRF7832ZTR RoHS-compliant and halogen-free?
Yes - IRF7832ZTR is RoHS-compliant per Directive 2011/65/EU and halogen-free per IEC 61249-2-21. The "Z" suffix in the part number explicitly denotes compliance with both requirements, and material declarations are available via Infineon's EcoReport portal.
IRF7832ZTR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3860 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7832ZTR FAQ
1.How can I place an order for IRF7832ZTR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7832ZTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7832ZTR reliable?
The price and inventory of IRF7832ZTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7832ZTR is usually 5 days.
3.What payment methods are accepted for IRF7832ZTR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7832ZTR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7832ZTR?
IRF7832ZTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7832ZTR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7832ZTR?
For technical support, including IRF7832ZTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7832ZTR requirements.
6.How does Aetrix verify that IRF7832ZTR is sourced from the original manufacturer or authorized distributors?
All IRF7832ZTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7832ZTR meets industry standards.
7.What is the process for return or replacement of IRF7832ZTR?
All IRF7832ZTR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7832ZTR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7832ZTR part is unused and in its original packaging.
Return procedure for IRF7832ZTR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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