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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7834TR

Name: IRF7834TR
Brand: Infineon Technologies
SKU: IRF7834TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7834TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7834TR.pdf

Description:: MOSFET N-CH 30V 19A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7834TR from Infineon Technologies (formerly International Rectifier) is a 30V, 16A N-channel HEXFET Power MOSFET in SO-8 package, optimized as a synchronous rectifier FET in high-frequency DC-DC converters. It delivers 3.6 mΩ R_DS(on) at V_GS = 10 V, 29 nC total gate charge, and fully characterized avalanche capability for robust operation in notebook CPU power stages and isolated telecom supplies.

For engineers reviewing the IRF7834TR datasheet, IRF7834TR pinout, IRF7834TR application, or IRF7834TR equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, ultra-low gate impedance for fast switching, Q_gd/Q_gs1 ratio critical to C_dv/dt immunity, and body diode reverse recovery charge (Q_rr = 13–20 nC) affecting shoot-through risk in synchronous buck topologies.

Technical Context

This device operates as a low-side synchronous rectifier in non-isolated buck converters and secondary-side switch in isolated forward/flyback topologies. Its 30 V V_DS rating supports 12 V and 24 V input rails, while 4.5 mΩ max R_DS(on) at 10 V ensures <1 W conduction loss at 16 A DC current under typical thermal conditions.

The SO-8 package enables dual-source layout with control FETs, and its fully characterized unclamped inductive switching (UIS) performance-E_AS = 100 mJ at I_AS = 5.9 A-supports reliable operation during transient overloads without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports 24 V nominal input systems with 20 % margin for voltage spikes
R_DS(on) max @ 10 V	4.5 mΩ - Enables ≤0.72 W conduction loss at 16 A continuous drain current
Q_g typ.	29 nC - Determines gate drive power (P_drive ≈ Q_g × V_GS × f_SW) and influences switching speed
Q_rr	13–20 nC - Directly contributes to shoot-through loss in synchronous rectification; lower values reduce cross-conduction risk
V_GS(th)	1.35–2.25 V - Ensures reliable turn-on with 3.3 V or 5 V gate drivers; low threshold aids 4.5 V logic-level operation
C_iss	3710 pF - Impacts Miller effect and gate drive strength requirements during hard-switching transitions
T_J max	+150 °C - Allows operation in thermally constrained notebook VRM and server POL modules

Pinout & Package

IRF7834TR uses an SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. The top view shows pins 1–8 in standard SO-8 configuration, where pins 1–3 and 5–7 are source terminals, pin 4 is gate, and pins 8, 7, 6, 5, 3, 2, and 1 connect internally to drain (D).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7	Source (S)	Common source node for internal parallel die; low-inductance connection reduces switching ringing
4	Gate (G)	Single gate input; ultra-low gate impedance minimizes drive loss and improves dV/dt immunity
8, 7, 6, 5, 3, 2, 1 (Drain tab)	Drain (D)	Exposed copper drain pad on bottom side - primary thermal path to PCB; requires soldered thermal pad for R_θJA ≤ 50 °C/W

Key Features

Feature	Design Value
Very low R_DS(on) at 4.5 V V_GS	Enables direct drive from 5 V or 3.3 V controllers without level-shifting, reducing BOM count in compact VRMs
Fully characterized avalanche voltage/current	Supports unclamped inductive switching up to E_AS = 100 mJ - eliminates need for external clamping in many POL designs
Ultra-low gate impedance	Reduces gate drive loop inductance sensitivity and improves immunity to parasitic turn-on during high dV/dt events
Optimized Q_gd/Q_gs1 ratio	Minimizes Miller-induced gate voltage overshoot - critical for stable operation when drain node swings between 0 V and V_IN

Applications

Notebook CPU Voltage Regulator Module (VRM)

Isolated Telecom DC-DC Converter Secondary Side

Use Scenario: High-current, high-efficiency 1–2 V output stage supplying Intel/AMD mobile processors with dynamic load steps up to 100 A/µs.

IC Role / Device Role: Low-side synchronous rectifier FET replacing Schottky diode to reduce conduction loss and improve light-load efficiency.

Use Value: 3.6 mΩ R_DS(on) cuts conduction loss by >60 % vs. 0.4 V Schottky at 16 A, enabling >92 % peak efficiency at 12 V input.

Use Scenario: 48 V to 12 V isolated forward converter in enterprise networking switches with 300 kHz switching frequency.

IC Role / Device Role: Synchronous rectifier on secondary winding to replace fast recovery diode and minimize heat buildup in sealed chassis.

Use Value: Q_rr = 13 nC and soft body diode recovery reduce cross-conduction loss by 35 % compared to standard 30 V MOSFETs, lowering secondary-side temperature rise by 12 °C.

Server Point-of-Load (POL) Converter

Industrial Programmable Logic Controller (PLC) Power Supply

Use Scenario: 12 V input, 0.85 V/60 A output multiphase buck regulator powering FPGA or ASIC cores in data center servers.

IC Role / Device Role: Parallel-configured low-side FET in 3-phase topology, leveraging multiple source pins for balanced current sharing.

Use Value: Dual-source pin structure (pins 1–3, 5–7) enables symmetrical PCB routing, reducing phase current imbalance to <3 % across phases.

Use Scenario: 24 V industrial input, 5 V/3 A isolated flyback supply powering microcontroller and I/O circuitry in harsh EMC environments.

IC Role / Device Role: Secondary-side synchronous rectifier with integrated body diode used for auxiliary startup and fault-tolerant operation.

Use Value: Fully characterized V_SD = 1.0 V (max) and t_rr = 21–32 ns ensure predictable startup behavior and reduced EMI during line transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 3.0 mΩ @ 10 V; Q_g = 32 nC; SO-8 with enhanced thermal pad	Slightly lower R_DS(on) but higher Q_g; better thermal resistance (R_θJA = 42 °C/W)	Preferred for thermally limited 60 A+ POLs where board space allows higher gate drive capability
IPB80N04S4-02	R_DS(on) = 2.0 mΩ @ 10 V; TO-263 package; Q_g = 68 nC	Lower on-resistance but larger footprint and higher gate charge increases drive loss at >500 kHz	Suitable for lower-frequency (<300 kHz), high-current industrial supplies where thermal mass outweighs switching loss

Compared with SiR872DP-T1-GE3 and IPB80N04S4-02, IRF7834TR offers the best balance of low gate charge (29 nC), moderate R_DS(on) (3.6 mΩ), and SO-8 compatibility for space-constrained, high-frequency synchronous rectification - especially where C_dv/dt immunity and shoot-through margin are design-critical.

Availability

IRF7834TR is available at Aetrix Electronics and suitable for notebook VRMs, telecom DC-DC converters, and industrial PLC power supplies requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for IRF7834TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7834TR belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency synchronous rectification in computing and communications power conversion systems.

FAQ

What is the maximum continuous drain current for IRF7834TR at 70°C case temperature?

The maximum continuous drain current is 16 A at T_A = 70°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This assumes SO-8 mounting on a 1-in² 2-oz copper PCB with 2 oz thermal pad; actual current capability depends on heatsinking and airflow. Derating begins above 70°C at 0.02 A/°C.

Does IRF7834TR have a built-in body diode, and what are its key parameters?

Yes - it integrates a monolithic N-channel body diode with V_SD ≤ 1.0 V at I_S = 16 A and T_J = 25°C, reverse recovery time t_rr = 21–32 ns, and Q_rr = 13–20 nC. These values are measured under standardized conditions (V_DD = 15 V, I_F = 16 A, di/dt = 100 A/µs) and directly impact shoot-through loss in synchronous buck converters.

Can IRF7834TR be driven directly by a 3.3 V PWM controller without a gate driver?

Yes - its V_GS(th) range (1.35–2.25 V) and low R_DS(on) at 4.5 V (≤5.5 mΩ) allow functional operation with 3.3 V logic, but full 10 V drive is required to achieve rated 3.6 mΩ. For optimal efficiency and switching speed, a dedicated gate driver is recommended, especially above 300 kHz.

What is the thermal resistance from junction to ambient (R_θJA) for IRF7834TR in SO-8 package?

R_θJA is 50 °C/W maximum under standard JEDEC test conditions (1-in² 2-oz copper pad, no airflow). With optimized PCB layout - including full-soldered exposed drain pad and internal copper planes - typical R_θJA achieves 35–42 °C/W, enabling 16 A operation at T_A = 70°C without forced cooling.

IRF7834TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 19A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3710 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7834TR FAQ

1.How can I place an order for IRF7834TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7834TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7834TR reliable?

The price and inventory of IRF7834TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7834TR is usually 5 days.

3.What payment methods are accepted for IRF7834TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7834TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7834TR?

IRF7834TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7834TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7834TR?

For technical support, including IRF7834TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7834TR requirements.

6.How does Aetrix verify that IRF7834TR is sourced from the original manufacturer or authorized distributors?

All IRF7834TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7834TR meets industry standards.

7.What is the process for return or replacement of IRF7834TR?

All IRF7834TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7834TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7834TR part is unused and in its original packaging.

Return procedure for IRF7834TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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