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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7834TRPBF

Name: IRF7834TRPBF
Brand: Infineon Technologies
SKU: IRF7834TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7834TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7834TRPBF.pdf

Description:: MOSFET N-CH 30V 19A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7834TRPBF from Infineon Technologies is a 30V, 19A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized as a synchronous rectifier FET in high-frequency DC-DC converters. It delivers 3.6 mΩ R_DS(on) at V_GS = 10 V, 29 nC total gate charge, and features fully characterized avalanche capability (25 mJ E_AS), enabling robust operation in notebook CPU power stages and isolated telecom DC-DC modules.

For engineers reviewing the IRF7834TRPBF datasheet, IRF7834TRPBF pinout, IRF7834TRPBF application, or IRF7834TRPBF equivalent, key selection criteria include its ultra-low R_DS(on) at 4.5 V drive, low Q_gd/Q_gs1 ratio for C_dv/dt immunity, body diode t_rr of 21–32 ns, and SO-8 thermal performance with R_θJA = 50 °C/W - all critical for synchronous buck and forward converter secondary-side efficiency and reliability.

Technical Context

This MOSFET operates as a low-side synchronous rectifier in non-isolated and isolated DC-DC topologies, where fast switching, low conduction loss, and controlled reverse recovery are essential. Its 3.6 mΩ on-resistance at 10 V gate drive and 4.4 mΩ at 4.5 V enable high-efficiency operation under typical 5 V gate drive conditions used in modern controller ICs.

The device integrates a robust intrinsic body diode with 13–20 nC Q_rr and 21–32 ns t_rr, directly impacting shoot-through risk and loss distribution between primary and secondary FETs. Its 9.8 nC Q_gd and 7.5 nC Qgs1 yield a Q_gd/Q_gs1 ratio of ~1.3, minimizing susceptibility to C_dv/dt turn-on during high dV/dt node transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage compatible with 24 V input rails and transient margin in telecom and notebook power systems.
R_DS(on) @ 10 V	3.6 mΩ - Enables <1.4 W conduction loss at 19 A RMS in 12 V→1.2 V buck stages operating at 90% duty cycle.
Q_g (typ.)	29 nC - Determines gate drive power loss and minimum achievable switching frequency before drive losses dominate.
t_rr	21–32 ns - Limits reverse recovery energy transfer to primary-side FET and constrains maximum practical switching frequency.
R_θJA	50 °C/W - Defines thermal rise above ambient at 1.6 W dissipation; requires PCB copper area ≥1 in² for safe 70°C case operation.
E_AS	25 mJ - Supports single-pulse unclamped inductive switching events without failure, enhancing system ruggedness.
V_GS(th)	1.35–2.25 V - Ensures reliable turn-on with 3.3 V or 5 V logic-level gate drivers while avoiding spurious turn-on from noise.

Pinout & Package

IRF7834TRPBF is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. The package supports hand-soldering and reflow profiles compliant with JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Internally paralleled drain terminals - connected to exposed pad; carries full load current and serves as primary heat path to PCB.
6	Gate (G)	Control terminal; requires low-impedance drive to minimize switching losses and suppress C_dv/dt coupling.
Source (S)	Source (S)	Reference node for gate drive and current sensing; tied to output rail in synchronous rectifier configuration.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	4.4 mΩ - Enables efficient operation with 5 V gate drive common in integrated controller ICs, reducing conduction loss by >30% vs. legacy 10 V-only MOSFETs.
Fully characterized avalanche rating	25 mJ E_AS - Allows safe operation under unclamped inductive switching, eliminating need for external snubbers in many DC-DC designs.
Low Q_gd/Q_gs1 ratio	~1.3 - Reduces Miller-induced gate voltage spikes during high dV/dt switching node transitions, lowering shoot-through risk in synchronous rectifiers.
Optimized body diode recovery	Q_rr = 13–20 nC, t_rr = 21–32 ns - Minimizes reverse recovery loss transferred to primary-side FET and enables stable zero-voltage switching behavior.

Applications

Server VRM Power Stage

Notebook CPU Core Supply

Use Scenario: High-current, multi-phase buck converter supplying 1.2 V/60 A to Xeon or EPYC processors in 1U servers.

IC Role / Device Role: Synchronous rectifier FET in low-side position, commutated by multiphase PWM controller.

Use Value: 3.6 mΩ R_DS(on) reduces conduction loss by 0.43 W per phase vs. 5 mΩ alternatives, improving overall VRM efficiency by 0.8% at full load.

Use Scenario: Dual-phase 1.0 V/30 A core regulator in ultrabook platforms with strict thermal envelope limits.

IC Role / Device Role: Low-side synchronous FET driven by integrated 5 V gate driver in controller IC.

Use Value: 4.4 mΩ R_DS(on) at 4.5 V ensures full enhancement with controller's native gate drive, eliminating need for external level shifters or boost circuits.

Isolated Telecom DC-DC

Industrial PoE PD Converter

Use Scenario: 48 V input, 12 V output forward converter in network switch power supply with 200 kHz switching frequency.

IC Role / Device Role: Secondary-side synchronous rectifier replacing Schottky diode to improve efficiency and reduce heat sink size.

Use Value: 29 nC Q_g and 9.8 nC Q_gd allow clean turn-off even with limited gate drive strength, preventing cross-conduction during transformer reset.

Use Scenario: 57 V PoE-powered device requiring 3.3 V/2 A output with >85% efficiency across 10–100% load range.

IC Role / Device Role: Synchronous rectifier in active-clamp forward or flyback topology operating at 250 kHz.

Use Value: Fully characterized 25 mJ E_AS withstands voltage overshoot during PoE surge events and cable disconnect transients without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 3.0 mΩ @ 10 V; Q_g = 32 nC; SO-8 with enhanced thermal pad	Lower R_DS(on) improves conduction loss but higher Q_g increases drive loss at >500 kHz	Preferred for fixed 10 V gate drive and thermally constrained layouts; less tolerant of 4.5 V drive margin.
IPB80N04S4-02	R_DS(on) = 2.0 mΩ @ 10 V; TO-263 package; Q_g = 62 nC	Higher current rating (80 A) and lower R_DS(on), but larger footprint and slower switching due to higher Q_g	Suitable for high-power industrial DC-DC where board space allows TO-263 and switching frequency ≤200 kHz.

Compared with SiR872DP-T1-GE3 and IPB80N04S4-02, IRF7834TRPBF offers the best balance of low 4.5 V R_DS(on), moderate Q_g, and SO-8 manufacturability - making it optimal for compact, high-frequency synchronous rectifier designs where gate drive voltage headroom is limited.

Availability

IRF7834TRPBF is available at Aetrix Electronics and suitable for server VRMs, notebook CPU power stages, isolated telecom DC-DC converters, and PoE-powered device supplies requiring stable component supply and long-term production continuity.

Supply support for IRF7834TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

The IRF7834TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency synchronous rectification in high-frequency DC-DC conversion, emphasizing low R_DS(on), controlled body diode recovery, and avalanche ruggedness.

FAQ

What is the maximum continuous drain current for IRF7834TRPBF at 70°C case temperature?

The maximum continuous drain current is 16 A at T_A = 70°C with SO-8 mounting on a standard FR-4 PCB with 1 in² copper area. This rating assumes no forced airflow and accounts for thermal resistance R_θJA = 50 °C/W and power dissipation limit of 1.6 W at that temperature.

Does IRF7834TRPBF support 3.3 V gate drive in synchronous rectifier applications?

No - IRF7834TRPBF has a V_GS(th) range of 1.35–2.25 V but is not fully enhanced at 3.3 V. At V_GS = 3.3 V, R_DS(on) rises significantly (>12 mΩ); it requires ≥4.5 V for usable performance (4.4 mΩ max) and ≥10 V for rated 3.6 mΩ conduction loss.

How does the body diode reverse recovery performance affect system design?

With Q_rr = 13–20 nC and t_rr = 21–32 ns, the body diode recovery generates measurable current spikes during turn-on of the high-side FET. This necessitates careful layout to minimize loop inductance and may require gate resistor tuning to delay low-side turn-on slightly, avoiding shoot-through in hard-switched topologies.

Is IRF7834TRPBF lead-free and RoHS-compliant?

Yes - IRF7834TRPBF is marked "PbF" (lead-free) and complies with EU RoHS Directive 2011/65/EU and JEDEC JS-001 ESD standards. The SO-8 package uses matte tin plating and meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life.

IRF7834TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 19A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3710 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7834TRPBF FAQ

1.How can I place an order for IRF7834TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7834TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7834TRPBF reliable?

The price and inventory of IRF7834TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7834TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7834TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7834TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7834TRPBF?

IRF7834TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7834TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7834TRPBF?

For technical support, including IRF7834TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7834TRPBF requirements.

6.How does Aetrix verify that IRF7834TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7834TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7834TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7834TRPBF?

All IRF7834TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7834TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7834TRPBF part is unused and in its original packaging.

Return procedure for IRF7834TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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