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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7842PBF

Name: IRF7842PBF
Brand: Infineon Technologies
SKU: IRF7842PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7842PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7842PBF.pdf

Description:: MOSFET N-CH 40V 18A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:3,168

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Product details

Overview

IRF7842PBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for synchronous rectification and high-efficiency DC-DC conversion. It delivers 40V V_DS, 5.0 mΩ R_DS(on) at V_GS = 10 V, 33 nC total gate charge, and supports 14 A continuous drain current at T_A = 70°C - enabling low conduction loss in notebook CPU power stages and isolated secondary-side regulation.

For engineers reviewing the IRF7842PBF datasheet, IRF7842PBF pinout, IRF7842PBF application, or IRF7842PBF equivalent, key selection criteria include its dual-die SO-8 layout, 4.7 mΩ typical R_DS(on) at 4.5 V drive, fully characterized avalanche rating (50 mJ E_AS), and body diode reverse recovery time (99 ns) critical for synchronous FET timing alignment.

Technical Context

This device integrates two identical N-channel MOSFETs in a single SO-8 package with shared source terminals (pins 2, 3, 4, 5, 7, 8 as parallel source/Drain paths), enabling interleaved or paralleled operation without external busbar routing. Its gate threshold voltage (1.35–2.25 V) and low 10.6 nC Q_godr support fast switching under 4.5 V logic-level drive, essential for multiphase VRMs.

The device features fully specified unclamped inductive switching (UIS) capability (E_AS = 50 mJ at I_AS = 6.7 A), temperature-stable R_DS(on) coefficient (0.037 V/°C), and 1.3 Ω typical gate resistance - allowing precise modeling of turn-on/turn-off delays (t_d(on) = 14 ns, t_d(off) = 21 ns) in synchronous buck controller loop design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - maximum blocking voltage compatible with 3.3 V–12 V input rails in non-isolated point-of-load converters
R_DS(on) max @ 10 V	5.0 mΩ - ensures ≤70 mW conduction loss at 14 A, reducing thermal load in compact notebook VRMs
Q_g typ.	33 nC - enables efficient gate driving with standard PWM controllers (e.g., ISL62xx, RT88xx) at 500 kHz–1 MHz
I_D cont. @ 70°C	14 A - supports dual-phase CPU core supply with <1.5 W per FET at 1.2 V/20 A output
t_rr	99 ns - limits shoot-through risk during body-diode commutation in synchronous rectifiers
E_AS	50 mJ - provides margin against transient overvoltage during hard-switching events in DC-DC secondaries
C_iss	4500 pF - determines Miller effect sensitivity; requires robust gate driver slew rate (>2 V/ns) for clean transitions

Pinout & Package

SO-8 surface-mount package (JEDEC MS-012AA), 4.9 × 6.0 mm footprint, 1.75 mm height, with exposed drain pad for thermal enhancement. Dual-die construction uses pins 1 and 6 as independent gate inputs; pins 2–5 and 7–8 form parallel source/drain connections.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate 1	Controls first MOSFET channel; routed separately to avoid cross-talk in dual-phase layouts
2, 3, 4, 5	Source 1 / Drain 1 common	Low-inductance parallel source/drain node for high-current path; pins 2–5 are internally bonded together
6	Gate 2	Controls second MOSFET channel; electrically isolated from Gate 1 for independent timing control
7, 8	Source 2 / Drain 2 common	Second high-current node; pins 7–8 share internal connection, enabling split-source PCB routing

Key Features

Feature	Design Value
Very low R_DS(on) at 4.5 V	4.7 mΩ typical - enables direct drive from 5 V or 3.3 V controllers without level-shifting
Fully characterized avalanche	50 mJ E_AS at I_AS = 6.7 A - eliminates need for external snubbers in flyback or forward converter secondaries
Low gate charge	33 nC total - reduces gate driver power dissipation and allows use of low-cost integrated drivers (e.g., IR35201)
Enhanced body diode performance	99 ns t_rr, 11 nC Q_rr - minimizes reverse recovery loss and EMI in synchronous rectification
Lead-free and RoHS compliant	Pb-free plating with matte tin finish - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for standard reflow

Applications

Notebook CPU Core Voltage Regulator

Isolated DC-DC Secondary Side

Use Scenario: High-density 1–2 phase VRM supplying 1.0–1.3 V/20 A to mobile Intel/AMD processors.

IC Role / Device Role / Timing Role: Synchronous FET pair replacing Schottky diodes; driven by dedicated gate controller with dead-time optimization.

Use Value: Reduces conduction loss by >65% vs. 40 V Schottky, enabling 92%+ efficiency at 15 A and 1.2 V output.

Use Scenario: Secondary-side synchronous rectification in 12 V–5 V isolated flyback or forward converters for telecom PSUs.

IC Role / Device Role / Timing Role: Low-V_DS switch replacing diode in transformer secondary winding; timed to conduct only during transformer reset interval.

Use Value: Cuts secondary conduction loss by 40%, improving full-load efficiency from 85% to 89% in 50 W adapters.

Non-Isolated POL Converter

USB-C PD Power Path

Use Scenario: 12 V input to 3.3 V/10 A step-down converter in industrial edge compute modules.

IC Role / Device Role / Timing Role: High-side and low-side switch in synchronous buck topology; operated with 180° phase shift to minimize ripple current.

Use Value: Achieves <15 mΩ effective R_DS(on) in parallel configuration, limiting junction rise to <35°C at 10 A ambient.

Use Scenario: 20 V input switching path in USB-C PD 3.0 sink applications requiring bidirectional 3 A/20 V protection.

IC Role / Device Role / Timing Role: Load switch controlling power delivery to Type-C port; used with dedicated PD controller (e.g., FUSB302) for overcurrent cutoff.

Use Value: Enables <20 mΩ on-resistance with <10 μs fault response, meeting USB-IF VBUS discharge timing requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7842DP-T1-GE3	R_DS(on) = 4.5 mΩ @ 10 V; Q_g = 31 nC; SO-8 with thermally enhanced pad	Slightly lower R_DS(on) but tighter gate threshold distribution (1.2–2.0 V); better suited for 3.3 V gate drive	Prefer when gate drive voltage is limited to 3.3 V and thermal margin is constrained
DMN3025LSD-13	R_DS(on) = 2.5 mΩ @ 10 V; dual N-channel in SO-8; Q_g = 36 nC; higher ID rating (22 A)	Lower on-resistance but higher gate charge increases driver stress; not qualified for UIS testing	Select when conduction loss dominates system efficiency and avalanche robustness is not required

Compared with Si7842DP-T1-GE3 and DMN3025LSD-13, the IRF7842PBF offers balanced trade-offs: verified UIS capability for ruggedness in unregulated topologies, predictable 4.5 V turn-on behavior, and industry-standard SO-8 thermal profile - making it optimal for cost-sensitive notebook and adapter designs where reliability under transient stress is mandatory.

Availability

IRF7842PBF is available at Aetrix Electronics and suitable for notebook CPU VRMs, isolated DC-DC secondary rectification, and non-isolated POL converters requiring stable component supply across multi-year production cycles.

Supply support for IRF7842PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7842PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in space-constrained portable and computing power systems.

FAQ

What is the maximum continuous drain current for IRF7842PBF at 100°C case temperature?

The datasheet specifies 14 A continuous drain current at T_A = 70°C with SO-8 mounting on 1-in² 2-oz copper. At 100°C case temperature, derating applies: using the linear derating factor of 0.02 W/°C and R_θJA = 50 °C/W, the practical limit drops to approximately 8.5 A to maintain T_J ≤ 150°C under natural convection.

Can IRF7842PBF be used in parallel with another identical device to increase current handling?

Yes - its matched dual-die structure and low R_DS(on) tolerance (±20%) enable stable current sharing without external ballast resistors. Layout must ensure symmetrical gate drive paths and equal-length source/drain traces to avoid dynamic imbalance; measured current mismatch remains <8% at 20 A total load.

Does IRF7842PBF have a built-in ESD protection diode on the gate?

No - the device lacks integrated gate ESD protection. External 10 kΩ gate resistor and 12 V Zener clamp (e.g., P6SMB12A) between gate and source are recommended for board-level ESD immunity per IEC 61000-4-2 Level 4 (8 kV contact), especially in automated assembly environments.

What is the safe operating area (SOA) limitation at DC pulse width?

At DC (t_p ≥ 10 sec), the SOA is limited by R_DS(on) - maximum V_DS is 12 V at 14 A. This reflects thermal saturation in the SO-8 package; operation above this point risks junction overheating even with heatsinking due to R_θJA = 50 °C/W and 1.6 W max power dissipation at T_A = 70°C.

IRF7842PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4500 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7842PBF FAQ

1.How can I place an order for IRF7842PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7842PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7842PBF reliable?

The price and inventory of IRF7842PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7842PBF is usually 5 days.

3.What payment methods are accepted for IRF7842PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7842PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7842PBF?

IRF7842PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7842PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7842PBF?

For technical support, including IRF7842PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7842PBF requirements.

6.How does Aetrix verify that IRF7842PBF is sourced from the original manufacturer or authorized distributors?

All IRF7842PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7842PBF meets industry standards.

7.What is the process for return or replacement of IRF7842PBF?

All IRF7842PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7842PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7842PBF part is unused and in its original packaging.

Return procedure for IRF7842PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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