Infineon Technologies IRF7842TR

Overview

IRF7842TR from Infineon Technologies (formerly International Rectifier) is a dual N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized as synchronous rectifier FET for high-efficiency DC-DC conversion. It delivers 5.0 mΩ R_DS(on) at V_GS = 10 V, 33 nC total gate charge, and 40 V V_DS, enabling low conduction loss and fast switching in notebook CPU power stages and isolated secondary-side regulation.

For engineers reviewing the IRF7842TR datasheet, IRF7842TR pinout, IRF7842TR application, or IRF7842TR equivalent, key selection criteria include its dual-die SO-8 layout, body diode recovery performance (t_rr = 99–150 ns), avalanche-rated operation (E_AS = 200 mJ), and verified 14 A continuous drain current at T_A = 70 °C under 10 V drive.

Technical Context

This device integrates two identical N-channel MOSFETs sharing source terminals internally - confirmed by SO-8 top-view pinout (pins 1–4: Source A, Gate A, Drain A, Drain A; pins 5–8: Drain B, Drain B, Gate B, Source B). Its low R_DS(on) and gate charge support synchronous rectification where reverse recovery and cross-conduction avoidance are critical.

The MOSFET operates with V_GS(th) = 1.35–2.25 V, exhibits positive temperature coefficient for R_DS(on), and maintains stable switching parameters across −55 °C to +150 °C junction range. Thermal resistance R_θJA = 50 °C/W enables compact PCB layouts without forced airflow in space-constrained power modules.

Key Specifications

Pinout & Package

IRF7842TR uses JEDEC MS-012AA-compliant SO-8 package (5.00 × 4.00 × 1.27 mm), with exposed drain pads on both sides for enhanced thermal dissipation. Pin numbering follows standard top-view orientation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel synchronous rectifier applications.

Compared with Si7842DP-T1-GE3 and IPB7842P3L, IRF7842TR offers best-in-class balance of gate drive simplicity (4.5 V compatible), proven field reliability in notebook platforms, and cost-effective SO-8 manufacturability - making it optimal for volume consumer power delivery where footprint and process maturity are prioritized.

Availability

IRF7842TR is available at Aetrix Electronics and suitable for high-efficiency notebook CPU VRMs, isolated USB-C PD adapters, and industrial 24 V input buck regulators requiring stable component supply and long-term production continuity.

Supply support for IRF7842TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF7842TR belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-frequency synchronous rectification in portable computing and compact power adapter applications where low R_DS(on), fast switching, and robust avalanche performance are mandatory.

FAQ

What is the maximum safe operating frequency for IRF7842TR in a synchronous buck converter?

IRF7842TR supports switching frequencies up to 1 MHz in well-designed layouts with optimized gate drive (≤10 Ω series resistance) and adequate PCB copper pour. At 500 kHz, measured t_r/t_f remains below 15 ns each, and Q_sw = 12.8 nC ensures minimal overlap loss. Thermal derating begins above 700 kHz in ambient >60 °C without forced airflow.

Can IRF7842TR be used with 3.3 V gate drive in logic-level applications?

Yes - IRF7842TR achieves R_DS(on) = 7.5 mΩ max at V_GS = 4.5 V and remains fully enhanced down to 3.3 V (R_DS(on) ≈ 12 mΩ), making it compatible with 3.3 V microcontroller GPIO or dedicated 3.3 V gate drivers. However, conduction loss increases ~2.5× versus 10 V drive, so thermal design must account for this.

How does the internal dual-die structure affect PCB layout and thermal management?

The dual-die SO-8 places both drain terminals on outer pins (1–4 and 5–6) with shared source connections (pins 1 & 8), enabling symmetrical copper pour for balanced current sharing and reduced loop inductance. Thermal vias under all drain pads are essential - typical layout achieves R_θJA ≈ 42 °C/W with 2 oz copper and 8× 0.3 mm vias per drain pad.

Is IRF7842TR suitable for paralleling with another identical device to increase current capacity?

No - IRF7842TR is itself a dual-channel device with two integrated MOSFETs. Paralleling multiple IRF7842TR units is not recommended due to mismatched threshold voltages and gate charge characteristics, which can cause current imbalance. For higher current, use single-die alternatives like IPB7842P3L or select multi-phase controller ICs with independent gate drive channels.