My Inquiry
My Account
Infineon Technologies IRF7854PBF
- Part No.:
- IRF7854PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7854PBF.pdf
- Description:
- MOSFET N-CH 80V 10A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,903
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF7854PBF from Infineon Technologies is a 80V, 10A, 13.4mΩ N-channel HEXFET Power MOSFET in SO-8 package, optimized as a primary-side switch in two-switch forward and bridge topologies with 36–60V input, and as secondary-side synchronous rectifier in 12V-output DC-DC converters.
For engineers reviewing the IRF7854PBF datasheet, IRF7854PBF pinout, IRF7854PBF application, or IRF7854PBF equivalent, key selection criteria include its 8.7nC gate-to-drain charge, 410pF effective output capacitance (Coss eff.), 15ns turn-off delay, 1.3V body diode forward voltage, and avalanche-rated 110mJ single-pulse energy under unclamped inductive switching.
Technical Context
This MOSFET employs planar silicon HEXFET architecture with fully characterized dynamic parameters including Ciss (1620pF), Crss (86pF), and Coss eff. (410pF) - critical for accurate snubberless flyback and forward converter design. Its low Qgd/Qg ratio (≈32%) supports high-efficiency hard-switching at >300kHz.
The device integrates a robust intrinsic body diode with trr = 43–65ns and Qrr = 76–110nC, enabling reliable synchronous rectification in non-isolated buck converters. Thermal performance is defined by RθJA = 50°C/W (PCB mount) and RθJL = 20°C/W (junction-to-drain lead), supporting high-current pulse operation up to 79A IDM.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80V - Withstands 64V DC bus transients in ETSI-compliant 48V telecom systems without avalanche breakdown. |
| RDS(on) max | 13.4mΩ @ VGS = 10V - Enables ≤1.3W conduction loss at 10A continuous drain current in 12V synchronous rectifier stage. |
| Qgd | 8.7nC - Low Miller charge reduces switching losses and improves noise immunity during high-dv/dt transitions in bridge configurations. |
| Coss eff. | 410pF - Fixed effective capacitance used to calculate actual switching node rise time in hard-switched topologies. |
| EAS | 110mJ - Single-pulse avalanche energy rating validated per JEDEC JESD24-11, supporting robustness in unclamped inductive turn-off. |
| VSD | 1.3V @ IS = 6.0A - Forward voltage of integrated body diode enables efficient freewheeling in buck and forward converters. |
| tr/tf | 8.5ns/8.6ns - Fast edge rates support high-frequency (>500kHz) operation while minimizing overlap loss in synchronous rectification. |
Pinout & Package
IRF7854PBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AC), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal conduction and current handling. Pin 5 is gate, pin 7 is source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 8 | Drain (D) | Parallel-connected high-current drain terminals - reduce package inductance and improve current sharing in multi-phase or paralleled designs. |
| 5 | Gate (G) | Control terminal requiring ≤10V drive; low input capacitance (Ciss = 1620pF) eases gate driver selection. |
| 7 | Source (S) | Reference node for gate drive and current sensing; tied to power ground in synchronous rectifier applications. |
Key Features
| Feature | Design Value |
|---|---|
| Low Qgd/Qg ratio | 32% - Minimizes Miller-induced shoot-through risk and improves controllability in high-side switching configurations. |
| Fully characterized Coss eff. | 410pF - Enables precise calculation of switching transition times without iterative simulation, accelerating layout validation. |
| Avalanche-rated | 110mJ EAS - Eliminates need for external clamping circuits in flyback and forward converters operating with leakage inductance. |
| Body diode Qrr | 76–110nC - Predictable reverse recovery behavior allows stable dead-time optimization in synchronous rectification. |
| SO-8 thermal RθJL | 20°C/W - Enables direct heat transfer from die to PCB copper pour or heatsink via drain pad, improving power density. |
Applications
| Telecom Primary-Side Switch | Server VRM Synchronous Rectifier |
|---|---|
Use Scenario: Two-switch forward converter in 48V telecom rectifier supplying 12V intermediate bus. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 200–300kHz with 6.0A peak drain current and 64V VDS stress. Use Value: 13.4mΩ RDS(on) and 8.7nC Qgd reduce total switching + conduction loss to <2.1W at full load, improving system efficiency by ≥1.2% vs. legacy 20mΩ parts. | Use Scenario: Secondary-side synchronous rectifier in 48V→12V non-isolated buck converter for server CPU VRMs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode, driven with 100ns dead time. Use Value: 1.3V VSD and 43ns trr enable 94.7% peak efficiency at 100A output, reducing thermal load by 3.8W compared to 40V Schottky solution. |
| Industrial DC-DC Converter | Automotive 48V Mild Hybrid DC-DC |
Use Scenario: Isolated forward converter powering industrial PLC I/O modules from 36–60V ETSI input range. IC Role / Device Role / Timing Role: Primary-side switch with 15ns td(off) and 80V VDSS, operating at 250kHz with 10A peak current. Use Value: Avalanche rating (110mJ) absorbs leakage energy during transformer reset, eliminating need for RCD clamp and reducing BOM count by 3 components. | Use Scenario: Bidirectional 48V–12V DC-DC converter in mild hybrid vehicle battery management system. IC Role / Device Role / Timing Role: Synchronous rectifier in buck mode and active switch in boost mode, leveraging bidirectional conduction capability. Use Value: 79A pulsed source current (ISM) and 150°C TJ rating support 10s peak loads up to 5kW, meeting ISO 16750-2 transient requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP80NF55-08 | 80V, 80A, 8mΩ in TO-220; higher RDS(on) tempco and no Coss eff. spec | Requires heatsink; unsuitable for SO-8 footprint-constrained boards | Select only when board space allows through-hole mounting and thermal mass exceeds 25°C/W ambient. |
| SiR872DP | 80V, 12A, 11.5mΩ in PowerPAK SO-8; lower Qgd (6.8nC) but uncharacterized avalanche energy | Lacks JEDEC-validated EAS; not recommended for unclamped inductive switching | Prefer for high-frequency buck converters where avalanche stress is absent and gate drive loss dominates. |
Compared with STP80NF55-08 and SiR872DP, IRF7854PBF uniquely balances SO-8 footprint compatibility, fully specified Coss eff. and avalanche energy, and low Qgd - making it optimal for telecom and industrial forward converters where layout density, reliability, and predictable switching behavior are jointly critical.
Availability
IRF7854PBF is available at Aetrix Electronics and suitable for telecom rectifiers, server VRMs, industrial DC-DC converters, and automotive 48V mild hybrid systems requiring stable component supply and long-term lifecycle assurance.
Supply support for IRF7854PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
The IRF7854PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability DC-DC conversion in telecom, server, and industrial power supplies operating across 36–60V input ranges.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The IRF7854PBF supports 7.9A continuous drain current at TA = 70°C with PCB mount, derated from 10A at 25°C using the specified 2.5W/°C linear derating factor. This value assumes minimum copper area (1 inch²) and accounts for RθJA = 50°C/W thermal resistance.
Does IRF7854PBF require a gate resistor for safe operation?
Yes - a gate resistor (typically 6.2Ω, per datasheet Fig 10a test circuit) is required to control dV/dt and prevent parasitic oscillation during switching. Without it, the 1620pF Ciss and 8.7nC Qgd can cause ringing that exceeds VGS = ±20V absolute maximum rating, risking gate oxide failure.
Can IRF7854PBF be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient (0.095V/°C) ensures inherent current sharing when paralleled. However, matched layout symmetry (equal trace inductance/resistance to each device) and individual gate resistors are mandatory to avoid dynamic imbalance during switching transitions.
Is the body diode suitable for reverse recovery in synchronous rectification?
Yes - the body diode is fully characterized with trr = 43–65ns and Qrr = 76–110nC at IF = 6.0A, enabling precise dead-time calculation. Its soft recovery behavior minimizes EMI in 12V synchronous buck stages, unlike fast-recovery diodes that generate high dv/dt spikes.
IRF7854PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 13.4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1620 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7854PBF FAQ
1.How can I place an order for IRF7854PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7854PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7854PBF reliable?
The price and inventory of IRF7854PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7854PBF is usually 5 days.
3.What payment methods are accepted for IRF7854PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7854PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7854PBF?
IRF7854PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7854PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7854PBF?
For technical support, including IRF7854PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7854PBF requirements.
6.How does Aetrix verify that IRF7854PBF is sourced from the original manufacturer or authorized distributors?
All IRF7854PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7854PBF meets industry standards.
7.What is the process for return or replacement of IRF7854PBF?
All IRF7854PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7854PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7854PBF part is unused and in its original packaging.
Return procedure for IRF7854PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF7854PBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
