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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7855PBF

Name: IRF7855PBF
Brand: Infineon Technologies
SKU: IRF7855PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7855PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7855PBF.pdf

Description:: MOSFET N-CH 60V 12A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:3,997

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Product details

Overview

IRF7855PBF from Infineon Technologies (formerly International Rectifier) is a 60V, 12A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for primary-side switching in isolated DC-DC topologies and secondary-side synchronous rectification. It delivers 7.4 mΩ R_DS(on) at V_GS = 10 V, 9.6 nC Q_gd, and 520 pF C_oss(eff), enabling high-efficiency operation in 48V non-isolated buck converters and push-pull bridge designs.

For engineers reviewing the IRF7855PBF datasheet, IRF7855PBF pinout, IRF7855PBF application, or IRF7855PBF equivalent, key selection criteria include gate charge profile, avalanche ruggedness (E_AS = 2400 mJ), body diode recovery (Q_rr = 38–57 nC), thermal resistance (R_θJA = 50 °C/W), and SO-8 lead-frame layout compatibility with automated PCB assembly.

Technical Context

This MOSFET employs planar silicon process technology with fully characterized dynamic parameters including C_iss = 1560 pF, C_oss = 440 pF (measured), and C_oss(eff) = 520 pF - a fixed capacitance calibrated to match actual V_DS rise time from 0 to 48 V. Its gate threshold voltage (V_GS(th) = 3.0–4.9 V) ensures robust turn-on margin under wide temperature and supply variation.

The device integrates a low-V_SD body diode (1.3 V max at I_S = 7.2 A) with trr = 33–50 ns and Q_rr = 38–57 nC, supporting fast synchronous rectification without external Schottky replacement. Avalanche rating is validated per unclamped inductive test (IAS = 7.2 A, E_AS = 2400 mJ at T_J = 25°C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports 48V bus systems with 20% derating margin against transients
R_DS(on) max	9.4 mΩ @ V_GS = 10 V - enables ≤1.1 W conduction loss at 12 A DC
Q_gd	9.6 nC - Miller charge directly impacts hard-switching loss and dV/dt immunity
C_oss(eff)	520 pF - calibrated output capacitance used for accurate snubber and ZVS timing design
E_AS	2400 mJ - single-pulse avalanche energy rating validated at I_AS = 7.2 A, L = 21 mH
Q_rr	38–57 nC - reverse recovery charge determines synchronous FET cross-conduction loss
R_θJA	50 °C/W - junction-to-ambient thermal resistance on standard 2-layer FR4 PCB

Pinout & Package

IRF7855PBF uses the industry-standard SO-8 surface-mount package (EIA-481 compliant), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal conduction and current handling. The lead frame is copper-based with matte tin plating.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	High-current power path; electrically tied to exposed pad for thermal and electrical sinking
5	Gate (G)	Control input; requires <10 V drive for full enhancement, sensitive to ringing due to Q_gd/Q_gs ratio
6, 7, 8	Source (S)	Power return node; forms common reference for gate drive and body diode conduction

Key Features

Feature	Design Value
Low Q_gd/Q_gs ratio	1.41 (9.6/6.8 nC) - improves controllability during Miller plateau and reduces shoot-through risk
Fully characterized C_oss(eff)	520 pF - replaces variable C_oss curve with single value for reliable soft-switching timing
Body diode Q_rr specification	38–57 nC - enables accurate dead-time optimization in synchronous rectifier layouts
Avalanche-rated construction	2400 mJ E_AS - allows safe operation under inductive switching fault conditions without external clamping

Applications

Primary-Side Bridge Switch

Secondary-Side Sync Rectifier

Use Scenario: High-efficiency 48V input isolated DC-DC converter using full-bridge topology with 100–300 kHz switching.

IC Role / Device Role / Timing Role: Primary-side high-side and low-side switch; handles full input voltage and load current with minimal conduction and switching loss.

Use Value: 9.4 mΩ R_DS(on) and 9.6 nC Q_gd reduce total losses below 2.1 W at 12 A, enabling >95% efficiency at full load.

Use Scenario: 15V output stage of telecom isolated PSU where synchronous rectification replaces Schottky diodes.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by transformer-coupled gate drive; conducts during freewheeling phase.

Use Value: Body diode Q_rr = 38–57 nC and V_SD = 1.3 V enable 30% lower forward loss vs. 40V Schottky, reducing output-stage temperature rise by 12°C.

48V Non-Isolated Buck Converter

Push-Pull Isolated DC-DC

Use Scenario: Point-of-load regulator in server VRM delivering up to 12 A at 1.2 V from 48V intermediate bus.

IC Role / Device Role / Timing Role: High-side switching FET in buck topology; switched at 500 kHz with active gate control.

Use Value: C_oss(eff) = 520 pF allows precise zero-voltage switching timing; R_DS(on) = 7.4 mΩ (typ.) cuts conduction loss to 1.07 W at 12 A.

Use Scenario: 18–36V input telecom DC-DC module using push-pull isolation with center-tapped transformer.

IC Role / Device Role / Timing Role: Primary-side switch on each leg; alternately driven with 50% duty cycle and dead time.

Use Value: 60V V_DS rating provides 2× input headroom; avalanche rating absorbs leakage inductance spikes without snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7832PBF	Same SO-8 package, but 30V V_DS, 16A ID, 5.8 mΩ R_DS(on)	Optimized for ≤24V input systems; unsuitable for 48V bus or 60V transient environments	Select only when input voltage stays below 28V and lower R_DS(on) justifies reduced voltage margin
SiR872DP-T1-GE3	Vishay 60V SO-8 with 7.0 mΩ R_DS(on), 10.5 nC Q_gd, and 450 pF C_oss(eff)	Higher gate charge increases switching loss; tighter R_DS(on) tolerance improves current sharing in parallel designs	Prefer when parallel FET operation or tighter parametric binning is required, accepting +4.7% Q_gd

Compared with IRF7855PBF, IRF7832PBF trades voltage margin for lower conduction loss in sub-30V systems, while SiR872DP-T1-GE3 offers improved on-resistance consistency at the cost of higher Miller charge - making IRF7855PBF optimal for balanced 48V–60V switching where gate drive strength and avalanche safety are prioritized.

Availability

IRF7855PBF is available at Aetrix Electronics and suitable for isolated DC-DC converters, synchronous buck regulators, and telecom power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF7855PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and industrial MOSFETs with over 30 years of high-reliability device development.

The IRF HEXFET® product line was engineered for high-frequency, high-efficiency power conversion in telecom, server, and industrial SMPS - emphasizing low gate charge, rugged avalanche performance, and thermally efficient packaging.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF7855PBF supports 8.7 A continuous drain current at T_A = 70°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from the 12 A rating at 25°C, based on R_θJA = 50 °C/W and junction temperature limit of 150°C.

Does this MOSFET require a gate resistor for stability?

Yes - a gate resistor (typically 6.2 Ω, per datasheet Fig 10a) is recommended to dampen ringing caused by parasitic inductance and the 9.6 nC Q_gd/6.8 nC Q_gs ratio. Omitting it risks shoot-through in half-bridge configurations and can exceed dV/dt limits during turn-off.

Can IRF7855PBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (Fig 4) enables inherent current sharing. However, matched gate drive routing and Kelvin source connections are required to avoid imbalance; layout symmetry must ensure equal loop inductance per paralleled device.

Is the SO-8 package lead-free and RoHS-compliant?

Yes - the "PbF" suffix confirms lead-free termination and full compliance with RoHS Directive 2011/65/EU. The matte tin plating meets JEDEC J-STD-020 moisture sensitivity level MSL3, with floor life of 168 hours at ≤30°C/60% RH.

IRF7855PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.4mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4.9V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1560 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7855PBF FAQ

1.How can I place an order for IRF7855PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7855PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7855PBF reliable?

The price and inventory of IRF7855PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7855PBF is usually 5 days.

3.What payment methods are accepted for IRF7855PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7855PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7855PBF?

IRF7855PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7855PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7855PBF?

For technical support, including IRF7855PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7855PBF requirements.

6.How does Aetrix verify that IRF7855PBF is sourced from the original manufacturer or authorized distributors?

All IRF7855PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7855PBF meets industry standards.

7.What is the process for return or replacement of IRF7855PBF?

All IRF7855PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7855PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7855PBF part is unused and in its original packaging.

Return procedure for IRF7855PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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