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Infineon Technologies IRF7946TR1PBF
- Part No.:
- IRF7946TR1PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MX
- Datasheet:
-
IRF7946TR1PBF.pdf
- Description:
- MOSFET N CH 40V 90A DIRECTFET MX
- Quantity:
- Payment:
- Shipping:
Inventory:9,328
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Product details
Overview
IRF7946TR1PBF from Infineon Technologies (formerly International Rectifier) is a 40 V, 1.1 mΩ typ. N-channel Power MOSFET in DirectFET MX package, rated for 198 A continuous drain current at 25°C and optimized for high-efficiency synchronous rectification and half-bridge motor drive circuits in battery-powered BLDC and brushed motor systems.
For engineers reviewing the IRF7946TR1PBF datasheet, IRF7946TR1PBF pinout, IRF7946TR1PBF application, or IRF7946TR1PBF equivalent, key selection criteria include its 1.1 mΩ RDS(on) at 10 VGS, 85 mJ single-pulse avalanche energy, 141 nC total gate charge, and enhanced body diode dv/dt capability up to 1.6 V/ns - critical for resonant converters and OR-ing applications requiring robust commutation.
Technical Context
This DirectFET MX device uses a top-side cooled, double-sided thermal design with integrated source-drain metalization, enabling low-inductance, high-current switching in compact layouts. Its gate threshold voltage (2.2–3.9 V) and 0.67 Ω internal gate resistance support stable PWM control in high-frequency DC/DC and inverter stages.
The MOSFET features fully characterized capacitive parameters - Ciss = 6852 pF, Coss = 1046 pF, Crss = 735 pF - and thermally limited avalanche ratings validated per AN-1005, with EAS = 85 mJ (L = 0.021 mH) and IAR = 90 A, supporting unclamped inductive switching in full-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage for 12–24 V battery bus and 36 V industrial DC link applications. |
| RDS(on) typ. | 1.1 mΩ at VGS = 10 V, ID = 90 A - Enables <1.1 W conduction loss at 100 A, critical for thermal management in high-current motor phases. |
| ID cont. | 198 A at TC = 25°C - Supports peak phase currents in 500 W–1 kW BLDC drives without forced cooling. |
| Qg total | 141 nC - Determines gate driver power requirement; enables efficient 100–200 kHz switching with ≤2.7 Ω gate resistor. |
| EAS | 85 mJ - Specifies single-pulse avalanche energy handling under unclamped inductive turn-off, validated at L = 0.021 mH, IAS = 90 A. |
| dv/dt (diode) | 1.6 V/ns - Body diode recovery ruggedness at TJ = 150°C, essential for reliable operation in hard-switched synchronous rectifiers. |
| RθJC | 1.3 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting with minimal thermal interface resistance. |
Pinout & Package
IRF7946TR1PBF uses the DirectFET™ MX surface-mount package - a top-side cooled, dual-drain, dual-source copper clip package with exposed drain on both top and bottom surfaces for ultra-low inductance and dual-sided thermal path. The package footprint is optimized for high-current PCB routing and clip-on heatsinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Top & Bottom) | Main current return path | Double-sided metalized drain enables parallel thermal paths and <0.5 nH source loop inductance for fast switching. |
| Source (Top) | Reference node for gate drive and current sensing | Top-side source terminals simplify Kelvin source connection for accurate high-side current monitoring. |
| Gate (Top) | Control terminal for channel modulation | Low-inductance gate pad supports clean 10 V drive with minimal Miller-induced shoot-through risk. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced body diode dv/dt capability | 1.6 V/ns at TJ = 150°C - Prevents false turn-on during high-speed commutation in synchronous rectifier mode. |
| Fully characterized avalanche SOA | 85 mJ single-pulse EAS with validated thermal limits - Enables robust unclamped inductive switching without external snubbers. |
| Low Qgd/Qg ratio | 44 nC / 141 nC ≈ 31% - Reduces Miller plateau duration and improves switching controllability in high-frequency bridge legs. |
| Double-sided cooling architecture | RθJC = 1.3 °C/W with top + bottom thermal interface - Delivers >2× power dissipation vs. standard SO-8 in same footprint. |
| RoHS-compliant, halogen-free construction | No lead, bromide, or halogen - Meets IPC-1752A material declaration requirements for automotive and industrial end equipment. |
Applications
| Brushed Motor Drive | BLDC Motor Drive |
|---|---|
|
Use Scenario: High-current H-bridge for cordless power tools operating from 18–24 V Li-ion packs. IC Role / Device Role / Timing Role: Low-side and high-side switching element in discrete half-bridge leg, handling bidirectional 150 A peak currents. Use Value: 1.1 mΩ RDS(on) reduces I²R losses by >30% vs. legacy TO-220 MOSFETs, extending runtime and limiting junction temperature rise to <125°C at 100% duty. |
Use Scenario: Six-step commutation in 400 W e-bike controller with 36 V nominal battery input. IC Role / Device Role / Timing Role: Phase-leg switch in three-phase inverter, switching at 16–20 kHz with synchronous rectification during freewheeling. Use Value: 1.6 V/ns body diode dv/dt rating prevents parasitic turn-on during rapid VDS transitions, eliminating need for external anti-parallel diodes. |
| Synchronous Rectifier | OR-ing Power Switch |
|
Use Scenario: Secondary-side rectification in 48 V–12 V isolated DC/DC converter for telecom shelf power. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in forward or LLC topology, driven by transformer-coupled gate signal. Use Value: 1.1 mΩ on-resistance cuts conduction loss by 65% vs. 40 V/100 A Schottky, improving efficiency from 92% to 95.3% at 100 A load. |
Use Scenario: Redundant 24 V DC power supply combining two hot-swap modules in industrial PLC backplane. IC Role / Device Role / Timing Role: OR-ing FET placed between each supply output and common bus, conducting only when VIN > VBUS + Vth. Use Value: Ultra-low RDS(on) minimizes forward voltage drop (<2.6 mV at 100 A), reducing heat generation and enabling passive cooling in space-constrained enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7945TR1PBF | Same DirectFET MX package, but 40 V, 1.4 mΩ max RDS(on), 170 A ID rating | Lower current handling and higher on-resistance reduce efficiency margin in 198 A peak loads | Select when lower cost is prioritized over peak current headroom and thermal margin. |
| SiR626DP-T1-GE3 | Vishay 40 V TrenchFET Gen IV, 1.25 mΩ typ., 180 A, PowerPAK® 8x8 package, RθJC = 1.5 °C/W | Higher RθJC and single-sided cooling limit power density in high-duty-cycle motor phases | Prefer for designs already using PowerPAK layout and requiring qualified AEC-Q101 qualification. |
Compared with IRF7946TR1PBF, IRF7945TR1PBF trades 14% higher RDS(on) and 14% lower ID for cost reduction, while SiR626DP offers AEC-Q101 compliance but sacrifices 0.2 °C/W thermal resistance and lacks dual-sided cooling - making IRF7946TR1PBF optimal for thermally constrained, high-current industrial motor drives.
Availability
IRF7946TR1PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across production volumes from prototype to volume manufacturing.
Supply support for IRF7946TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.
This part belongs to the StrongIRFET™ family of high-current, low-RDS(on) MOSFETs engineered specifically for high-efficiency motor control, DC/DC conversion, and redundant power architectures where thermal performance and avalanche ruggedness are critical.
FAQ
What is the maximum continuous drain current for IRF7946TR1PBF at 100°C case temperature?
The maximum continuous drain current is 125 A at TC = 100°C with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DirectFET MX package under sustained high-power operation without active cooling.
Does IRF7946TR1PBF require a negative gate voltage to ensure safe turn-off in high-dv/dt environments?
No - the device has a gate threshold voltage range of 2.2–3.9 V and is designed for 0–10 V or 0–15 V gate drive. A negative gate voltage is not required; however, a gate resistor ≤2.7 Ω and local gate-source capacitance help suppress ringing during fast switching in high-di/dt circuits.
Can IRF7946TR1PBF be used in parallel configurations without current-sharing resistors?
Yes - its positive RDS(on) temperature coefficient (RDS(on) increases with junction temperature) enables inherent current sharing. Parallel operation is validated in application note AN-994, provided layout symmetry and thermal coupling are maintained across devices.
What is the recommended PCB footprint and thermal pad configuration for IRF7946TR1PBF?
The official footprint is defined in application note AN-994: minimum 1.0 mm thick copper on both top and bottom layers, with ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch) under the drain pads, and solder mask defined for full copper exposure. A small clip heatsink is recommended for >100 A continuous operation.
IRF7946TR1PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®, StrongIRFET™
- Package/Case:
- DirectFET™ Isometric MX
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.4mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id:
- 3.9V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 212 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6852 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 96W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MX
IRF7946TR1PBF FAQ
1.How can I place an order for IRF7946TR1PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7946TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7946TR1PBF reliable?
The price and inventory of IRF7946TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7946TR1PBF is usually 5 days.
3.What payment methods are accepted for IRF7946TR1PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7946TR1PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7946TR1PBF?
IRF7946TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7946TR1PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7946TR1PBF?
For technical support, including IRF7946TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7946TR1PBF requirements.
6.How does Aetrix verify that IRF7946TR1PBF is sourced from the original manufacturer or authorized distributors?
All IRF7946TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7946TR1PBF meets industry standards.
7.What is the process for return or replacement of IRF7946TR1PBF?
All IRF7946TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7946TR1PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7946TR1PBF part is unused and in its original packaging.
Return procedure for IRF7946TR1PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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