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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF8010SPBF

Name: IRF8010SPBF
Brand: Infineon Technologies
SKU: IRF8010SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF8010SPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF8010SPBF.pdf

Description:: MOSFET N-CH 100V 80A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF8010SPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 80A N-channel enhancement-mode HEXFET Power MOSFET in D²PAK (TO-263) package, optimized for high-frequency DC-DC converters and motor control with R_DS(on) max = 15 mΩ at V_GS = 10 V, Q_gd = 26 nC, and E_AS = 310 mJ. It integrates a robust body diode (V_SD ≤ 1.3 V, t_rr = 99–150 ns) and supports UPS systems requiring low switching loss and avalanche ruggedness.

For engineers reviewing the IRF8010SPBF datasheet, IRF8010SPBF pinout, IRF8010SPBF application, or IRF8010SPBF equivalent, key selection criteria include its 100V V_DSS, 12 mΩ typical R_DS(on), 81 nC total gate charge, 530 pF effective output capacitance (C_oss,eff), and D²PAK thermal resistance (R_θJC = 0.57 °C/W).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with fully characterized dynamic parameters including C_iss = 3830 pF, C_oss = 480 pF, and Crss = 59 pF at V_DS = 25 V - enabling precise snubberless flyback and synchronous rectifier design. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures reliable TTL/CMOS-level drive compatibility.

The device features fully specified unclamped inductive switching (UIS) capability (E_AS = 310 mJ at I_AS = 18 A), temperature-stable R_DS(on) (TC = +0.11 V/°C), and avalanche-rated operation up to T_J = 175 °C - critical for overcurrent fault handling in motor drives and server PSUs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche; sets upper limit for bus voltage in 48 V input DC-DC stages.
R_DS(on) max	15 mΩ @ V_GS = 10 V, T_J = 25 °C - Directly determines conduction loss (P_cond ≈ I_D² × R_DS(on)) in high-current power stages.
I_D continuous	80 A @ T_C = 25 °C - Sustained current rating under heatsink-cooled conditions; derates linearly above 25 °C.
Q_g	81 nC (typ) - Total gate charge required to switch; defines driver strength requirement and switching energy loss.
t_rr	99–150 ns - Body diode reverse recovery time; impacts shoot-through risk and EMI in synchronous buck topologies.
E_AS	310 mJ - Single-pulse avalanche energy rating; enables safe operation during inductive load turn-off transients.
C_oss,eff	530 pF - Effective output capacitance used in resonant transition calculations; lower than C_oss due to voltage-dependent behavior.

Pinout & Package

D²PAK (TO-263) surface-mount package with exposed drain pad for low thermal resistance (R_θJC = 0.57 °C/W) and mechanical robustness in high-power PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically connected to large copper pad; primary thermal path to heatsink; must be soldered to PCB copper pour.
Source	Current return node / reference	Common connection point for source sensing, current monitoring, and gate driver return; ties to power ground plane.
Gate	Control terminal	High-impedance input requiring <100 nC charge; sensitive to ringing; requires local gate resistor (e.g., 39 Ω) per app note AN-1001.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	26 nC / 81 nC = 0.32 - Reduces Miller effect, enabling faster, more controllable turn-off in hard-switched converters.
Fully characterized C_oss & C_oss,eff	480 pF nominal / 530 pF effective - Enables accurate zero-voltage switching (ZVS) timing prediction in LLC and phase-shifted full-bridge designs.
Body diode t_rr & Q_rr	99–150 ns / 460–700 nC - Quantified for synchronous rectification evaluation; avoids hidden losses in secondary-side switching.
Avalanche-rated operation	E_AS = 310 mJ, I_AR = 45 A - Allows use without external clamping in inductive load circuits like H-bridge motor drivers.

Applications

Server PSU Primary Switch

Industrial Motor Drive Half-Bridge

Use Scenario: High-efficiency 48 V–12 V intermediate bus converter operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Primary-side high-side switch in synchronous forward or active-clamp forward topology.

Use Value: Low R_DS(on) (12 mΩ typ) minimizes conduction loss at 60–80 A loads; low Q_gd enables clean turn-off at high dV/dt.

Use Scenario: 3-phase inverter stage driving 5–10 kW AC induction motors in CNC and pump systems.

IC Role / Device Role / Timing Role: Upper-leg switch in IGBT/MOSFET half-bridge module with bootstrap gate drive.

Use Value: Avalanche ruggedness (310 mJ) tolerates inductive kickback during short-circuit events; 175 °C T_J rating supports compact heatsinking.

UPS Inverter Stage

Telecom DC-DC Brick

Use Scenario: Bidirectional 48 V battery backup in-line inverter delivering 1–3 kVA sinusoidal output.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge inverter with body-diode freewheeling.

Use Value: Verified t_rr (99 ns) and Q_rr (460 nC) reduce cross-conduction loss and EMI during dead-time transitions.

Use Scenario: Input-stage switch in 36–75 V telecom rectifier feeding isolated forward converter.

IC Role / Device Role / Timing Role: Primary switch handling 40–60 A peak current with 100 V clearance margin.

Use Value: D²PAK package provides 0.57 °C/W R_θJC, enabling >85% efficiency at 500 W without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 100V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW90NF10	R_DS(on) = 11.5 mΩ (typ), Q_g = 120 nC, TO-247 package	Larger footprint; higher gate charge increases driver loss; better thermal mass for intermittent surge	Preferred where board space allows and higher avalanche repetition is needed.
IXFH80N10P	R_DS(on) = 10.5 mΩ (typ), Q_gd = 32 nC, TO-247 package	Lower R_DS(on) but higher Miller charge; no published C_oss,eff or t_rr data	Consider when conduction loss dominates, but avoid in high-dv/dt synchronous rectifiers without added gate damping.

Compared with STW90NF10 and IXFH80N10P, the IRF8010SPBF offers superior gate-drive efficiency (lower Q_g and Q_gd), verified body-diode dynamics, and D²PAK thermal performance - making it optimal for space-constrained, high-frequency SMPS where switching loss and layout simplicity are prioritized.

Availability

IRF8010SPBF is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, UPS inverters, and telecom DC-DC bricks requiring stable component supply and long-term production continuity.

Supply support for IRF8010SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with deep expertise in silicon MOSFET reliability and thermal modeling.

The IRF8010SPBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power conversion in enterprise and industrial infrastructure equipment.

FAQ

Is IRF8010SPBF RoHS-compliant and lead-free?

Yes. The "PbF" suffix confirms compliance with RoHS Directive 2011/65/EU and JEDEC J-STD-609 standard for lead-free terminations. The device uses matte tin plating on leads and meets IPC/JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) for reflow assembly.

What is the maximum recommended gate drive voltage?

The absolute maximum V_GS is ±20 V, but the device is characterized and optimized for 10 V drive. Driving above 15 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and risk of spurious turn-on during fast dv/dt events.

Can IRF8010SPBF replace IRF8010LPBF in the same PCB layout?

Yes - both share identical D²PAK (IRF8010SPBF) and TO-262 (IRF8010LPBF) packages with identical pinouts and thermal pads. However, the TO-262 variant has higher R_θJC (0.80 °C/W), so thermal validation is required if substituting in thermally constrained designs.

Does the body diode support continuous bidirectional current in synchronous rectification?

No - the body diode is rated for pulsed source current (I_SM = 320 A) and continuous source current (I_S = 80 A), but its V_SD = 1.3 V and t_rr = 99–150 ns make it unsuitable for high-efficiency synchronous rectification without external Schottky assist; it is intended for freewheeling and fault protection only.

IRF8010SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3830 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 260W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF8010SPBF FAQ

1.How can I place an order for IRF8010SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF8010SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF8010SPBF reliable?

The price and inventory of IRF8010SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8010SPBF is usually 5 days.

3.What payment methods are accepted for IRF8010SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8010SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF8010SPBF?

IRF8010SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF8010SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF8010SPBF?

For technical support, including IRF8010SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8010SPBF requirements.

6.How does Aetrix verify that IRF8010SPBF is sourced from the original manufacturer or authorized distributors?

All IRF8010SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8010SPBF meets industry standards.

7.What is the process for return or replacement of IRF8010SPBF?

All IRF8010SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8010SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF8010SPBF part is unused and in its original packaging.

Return procedure for IRF8010SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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