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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF8010STRRPBF

Name: IRF8010STRRPBF
Brand: Infineon Technologies
SKU: IRF8010STRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF8010STRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF8010STRRPBF.pdf

Description:: MOSFET N-CH 100V 80A D2PAK

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Inventory:3,195

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Product details

Overview

IRF8010STRRPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 80A N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK (TO-263) package, optimized for high-frequency DC-DC converters and motor control. It delivers R_DS(on) = 12 mΩ (typ), Q_g = 81 nC (typ), and C_oss(eff) = 530 pF, enabling low conduction and switching losses in synchronous buck stages.

For engineers reviewing the IRF8010STRRPBF datasheet, IRF8010STRRPBF pinout, IRF8010STRRPBF application, or IRF8010STRRPBF equivalent, key selection criteria include avalanche-rated operation (E_AS = 310 mJ), fully characterized C_oss/C_rss, and body diode recovery performance (Q_rr = 460–700 nC, t_rr = 99–150 ns) for hard-switched topologies.

Technical Context

This MOSFET employs planar silicon process with optimized charge balance for fast switching and robust unclamped inductive switching (UIS). Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) supports standard 10 V gate drive, while low Q_gd/Q_gs ratio (26/22 nC) improves controllability during Miller plateau transition.

The device integrates a co-packaged, low-V_SD (1.3 V max) body diode with controlled reverse recovery, validated under di/dt = 100 A/µs. Thermal design is supported by R_θJC = 0.57 °C/W (typ) and SOA curves covering 100 µs to DC at T_C ≤ 175 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; rated for 48 V and 60 V bus systems with margin.
R_DS(on) max	15 mΩ @ T_J = 100 °C - Ensures <1.2 W conduction loss at 80 A, critical for thermal management in compact SMPS.
I_D continuous	80 A @ T_C = 25 °C - Supports high-current output stages without parallel devices in medium-power converters.
Q_g	81 nC (typ) - Enables efficient 100–500 kHz switching with moderate gate driver strength (e.g., 2 A peak).
C_oss(eff)	530 pF - Used directly in resonant timing calculations for ZVS/ZCS soft-switching design.
E_AS	310 mJ - Withstands single-pulse inductive energy in motor phase-leg or UPS H-bridge fault conditions.
t_rr	99–150 ns - Predictable body diode recovery enables accurate dead-time optimization in synchronous rectification.

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated tab (drain-connected), 3-pin configuration, 2.54 mm pitch, and JEDEC-standard footprint for high-current PCB thermal relief.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires 10 V drive for full enhancement; Miller capacitance (C_gd) dominates switching transitions.
Pin 2 (D)	Drain	Main power terminal; electrically connected to exposed copper tab; must be thermally anchored to heatsink or large copper pour.
Pin 3 (S)	Source	Power return and gate reference; forms common node with driver ground; carries full load current and body diode reverse recovery charge.

Key Features

Feature	Design Value
Lead-free construction	RoHS-compliant finish with matte tin plating; qualified for reflow per J-STD-020, peak 260 °C.
Low Q_gd/Q_g ratio	32% (26/81 nC) - Reduces sensitivity to Miller-induced shoot-through in half-bridge configurations.
Fully characterized C_oss	Includes effective C_oss = 530 pF at V_DS = 50 V - Eliminates need for empirical curve-fitting in snubber or LLC design.
Avalanche-rated	Specified E_AS and I_AR - Allows use in non-clamped topologies (e.g., flyback, active clamp) without external protection.
Body diode Q_rr	460–700 nC - Enables accurate prediction of commutation loss and EMI generation in synchronous rectifiers.

Applications

Server VRM

Industrial Motor Drive

Use Scenario: High-density 48 V input, 12 V/100 A output multiphase buck converter for CPU/GPU power delivery.

IC Role / Device Role: Synchronous high-side switch with fast turn-on and low R_DS(on) to minimize conduction loss at high duty cycle.

Use Value: 12 mΩ R_DS(on) reduces I²R loss by >25% vs. 16 mΩ alternatives, improving efficiency at 100 A load.

Use Scenario: 3-phase inverter stage in 5–10 kW servo drives operating at 10–20 kHz PWM frequency.

IC Role / Device Role: Low-loss, avalanche-rugged phase-leg switch handling regenerative braking energy via body diode conduction.

Use Value: 310 mJ E_AS and 99 ns t_rr enable reliable operation under short-circuit and overcurrent transients without desaturation protection.

Telecom PSU

UPS Inverter

Use Scenario: 3.3 V/50 A point-of-load regulator in 48 V telecom rectifier system with strict efficiency targets.

IC Role / Device Role: Low-voltage, high-current synchronous rectifier with minimal V_SD and Q_rr to reduce output ripple and EMI.

Use Value: 1.3 V V_SD and 460 nC Q_rr cut body diode conduction loss by ~30% compared to standard 1.7 V diodes.

Use Scenario: 120 V DC link in online double-conversion UPS delivering 1 kVA sinusoidal output.

IC Role / Device Role: Hard-switched H-bridge leg switch managing bidirectional power flow and battery charging cycles.

Use Value: R_θJC = 0.57 °C/W allows direct heatsink mounting without thermal interface pads, simplifying mechanical design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N10F7	R_DS(on) = 9.5 mΩ @ 10 V but higher Q_g = 110 nC; DFN8 5×6 mm package limits thermal mass.	Better conduction loss but slower switching; suited for lower-frequency (<100 kHz) industrial SMPS.	Prefer when thermal budget is tight but switching frequency is below 150 kHz.
IXFH80N10P	Same V_DSS/I_D rating; higher R_DS(on) = 17 mΩ; TO-247 package offers better heatsinking but larger footprint.	Higher conduction loss offsets improved thermal resistance; preferred for legacy through-hole designs.	Select when board space permits TO-247 and long-term availability of leaded variants is required.

Compared with STL110N10F7 and IXFH80N10P, IRF8010STRRPBF balances low R_DS(on), moderate Q_g, and D2PAK thermal performance-making it optimal for space-constrained, 200–500 kHz DC-DC converters where both efficiency and layout density matter.

Availability

IRF8010STRRPBF is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and UPS inverters requiring stable component supply across multi-year production cycles.

Supply support for IRF8010STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF8010STRRPBF belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in demanding switching applications such as data center power supplies and factory automation drives.

FAQ

Is IRF8010STRRPBF pin-compatible with IRF8010SPbF?

Yes. Both share identical D2PAK (TO-263) package outline, pin assignment (G-D-S), and thermal pad connection. The "RR" suffix denotes tape-and-reel packaging with moisture-sensitive level 1 (MSL-1) handling; electrical and thermal specs are identical.

What is the maximum recommended gate resistor for 300 kHz operation?

A 10 Ω gate resistor is recommended for 300 kHz switching with 12 V drive, balancing turn-on speed (t_d(on) ≈ 15 ns) and ringing suppression. Lower values risk overshoot; higher values increase switching loss beyond 100 mW per transition.

Does the body diode support continuous conduction mode (CCM) in synchronous rectification?

Yes. The body diode is rated for continuous source current up to 80 A at T_C = 25 °C and pulsed current up to 320 A. Its V_SD = 1.3 V and Q_rr = 460–700 nC are specified for CCM operation in buck-derived topologies.

Can IRF8010STRRPBF replace IRF8010LPbF in TO-262 designs?

No. IRF8010LPbF uses TO-262 (I2PAK) package with different pin spacing and thermal pad geometry. While electrically identical, mechanical incompatibility prevents drop-in replacement without PCB redesign.

IRF8010STRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3830 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 260W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF8010STRRPBF FAQ

1.How can I place an order for IRF8010STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF8010STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF8010STRRPBF reliable?

The price and inventory of IRF8010STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8010STRRPBF is usually 5 days.

3.What payment methods are accepted for IRF8010STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8010STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF8010STRRPBF?

IRF8010STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF8010STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF8010STRRPBF?

For technical support, including IRF8010STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8010STRRPBF requirements.

6.How does Aetrix verify that IRF8010STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF8010STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8010STRRPBF meets industry standards.

7.What is the process for return or replacement of IRF8010STRRPBF?

All IRF8010STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8010STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF8010STRRPBF part is unused and in its original packaging.

Return procedure for IRF8010STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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