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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF8113

Name: IRF8113
Brand: Infineon Technologies
SKU: IRF8113
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF8113

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF8113.pdf

Description:: MOSFET N-CH 30V 17.2A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:4,935

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Product details

Overview

IRF8113 from Infineon Technologies (formerly International Rectifier) is a 30V, 17.2A N-channel HEXFET Power MOSFET in SO-8 package, optimized as a synchronous rectifier FET in isolated DC-DC converters and as a control FET in notebook processor power stages. It features 4.7 mΩ R_DS(on) at V_GS = 10 V, 24 nC total gate charge, and fully characterized avalanche capability up to 48 mJ.

For engineers reviewing the IRF8113 datasheet, IRF8113 pinout, IRF8113 application, or IRF8113 equivalent, key selection criteria include low R_DS(on) at 4.5 V V_GS, gate charge profile for high-frequency switching, body diode reverse recovery performance (Q_rr = 21–32 nC), and SO-8 thermal resistance (R_θJA = 50 °C/W).

Technical Context

The IRF8113 is designed for high-efficiency, high-frequency synchronous rectification in isolated topologies such as forward and LLC converters, where low conduction loss and fast switching are critical. Its 4.5 V logic-level gate drive enables direct interfacing with PWM controllers without level-shifting, and its low Q_gd/Q_gs1 ratio minimizes C_dv/dt turn-on risk in noisy switching-node environments.

Thermally, it leverages the SO-8 package's dual-drain configuration (pins 1–4 and 6–7 tied to drain) to support high-current routing and reduce PCB trace inductance. The device is 100% tested for gate resistance (R_G = 0.8–1.5 Ω) and specified for operation from –55 °C to +150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in telecom/networking DC-DC systems.
R_DS(on) max @ 10 V	5.6 mΩ - Enables <1.0 W conduction loss at 13.3 A RMS in 12 V output stages with minimal heatsinking.
Q_g typ	24 nC - Supports efficient 500 kHz–1 MHz switching with moderate gate driver current (e.g., 1 A peak).
Q_rr	21–32 nC - Low reverse recovery charge reduces cross-conduction losses and EMI in synchronous rectifier operation.
R_θJA	50 °C/W - Defines thermal derating limit: 13.8 A continuous current at T_A = 70 °C with standard 2-layer PCB layout.
E_AS	48 mJ - Rated unclamped inductive avalanche energy ensures robustness during startup, overload, or fault conditions.

Pinout & Package

IRF8113 uses the SO-8 surface-mount package with exposed drain pads on pins 1–4 and 6–7 for enhanced thermal and current handling. Pin 5 is gate; pins 2, 3, and 8 are source terminals connected internally to the body diode cathode.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7	Drain (D)	High-current drain connection; pins 1–4 and 6–7 are internally paralleled for low-inductance, high-current path to PCB copper pour.
5	Gate (G)	Control terminal requiring ≤2.2 V threshold; driven directly by 3.3/5 V logic-level controllers.
8	Source (S)	Body diode anode and main source return; used for Kelvin sensing or low-side current monitoring in synchronous designs.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	6.8 mΩ max - Enables full-load efficiency >95% in 5 V/12 V output synchronous buck converters without gate boosting.
Fully characterized avalanche	48 mJ single-pulse rating - Eliminates need for external snubbers in flyback or forward converter primary-side clamp circuits.
Low Q_gd/Q_gs1 ratio	8.5 nC / 6.2 nC ≈ 1.37 - Reduces susceptibility to false turn-on from dV/dt coupling in high-side synchronous rectifier placement.
100% R_G tested	0.8–1.5 Ω - Ensures consistent gate drive timing and predictable switching behavior across production lots.

Applications

Server VRM Power Stage

Notebook CPU Core Supply

Use Scenario: High-current, multi-phase buck converter delivering up to 100 A to server CPUs at 0.8–1.8 V.

IC Role / Device Role / Timing Role: Control FET (high-side switch) operating at 300–600 kHz with precise dead-time control.

Use Value: 4.7 mΩ R_DS(on) minimizes I²R loss at 20+ A per phase; low Q_g enables fast turn-on with minimal driver power overhead.

Use Scenario: Dual-phase 1.0–1.5 V core supply in ultrabook platforms with strict thermal envelope limits.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in secondary-side of multiphase buck, replacing Schottky diodes.

Use Value: Body diode V_SD ≤ 1.0 V and Q_rr ≤ 32 nC reduce conduction and recovery losses, improving light-load efficiency by >3% vs. discrete diodes.

Isolated Telecom DC-DC

Industrial PoE PSE Controller

Use Scenario: 48 V input, 12 V/15 A isolated forward converter in networking line cards.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier with self-driven or controller-synchronized gate timing.

Use Value: SO-8 dual-drain layout supports low-inductance PCB layout; 135 A pulsed ID capability handles surge currents during hot-swap events.

Use Scenario: Primary-side switch in IEEE 802.3at PoE+ power sourcing equipment delivering up to 30 W per port.

IC Role / Device Role / Timing Role: High-side switch in active clamp forward or flyback topology, operating at 250–500 kHz.

Use Value: 30 V V_DS rating accommodates 57 V PoE open-circuit voltage plus safety margin; 48 mJ E_AS withstands cable-disconnect transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 29 nC; SO-8 package with enhanced thermal pad.	Higher gate charge increases driver loss at >1 MHz; superior thermal R_θJA (35 °C/W) enables higher current density.	Preferred for thermally constrained 12 V output stages needing >15 A continuous current.
IPB052N03L	R_DS(on) = 5.2 mΩ @ 10 V; Q_g = 21 nC; TO-263 package with lower R_θJA (30 °C/W) but larger footprint.	TO-263 requires more PCB area and manual reflow; better suited for industrial converters with forced-air cooling.	Select when board space allows and ambient temperature exceeds 70 °C routinely.

Compared with SiR872DP and IPB052N03L, the IRF8113 offers the best balance of low gate charge, SO-8 compatibility, and proven reliability in high-volume notebook and telecom applications-making it optimal for cost-sensitive, space-constrained 30 V synchronous rectifier designs.

Availability

IRF8113 is available at Aetrix Electronics and suitable for server VRM power stages, notebook CPU core supplies, isolated telecom DC-DC converters, and industrial PoE PSE controllers requiring stable component supply and long-term lifecycle support.

Supply support for IRF8113 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF8113 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, networking, and power adapter applications.

FAQ

Is IRF8113 suitable for 5 V gate drive in synchronous rectifier applications?

Yes. The IRF8113 has a gate threshold voltage (V_GS(th)) of 1.5–2.2 V and guarantees R_DS(on) ≤ 6.8 mΩ at V_GS = 4.5 V, making it fully compatible with 5 V logic-level drivers and self-driven synchronous rectifier circuits without external gate boosting.

What is the maximum continuous drain current at 100 °C case temperature?

Per the Absolute Maximum Ratings table, the continuous drain current at T_A = 70 °C is 13.8 A. At T_C = 100 °C, linear derating applies: 13.8 A − (100 − 70) × 0.02 A/°C = 13.2 A. This assumes SO-8 mounting on a 1-in² 2-oz copper pad with 2 vias.

Does IRF8113 include integrated ESD protection on the gate?

No. The IRF8113 does not integrate gate ESD protection diodes. Gate-to-source leakage is specified at ±100 nA, and the device requires external gate resistors (typically 10–47 Ω) and layout care to prevent electrostatic damage during handling and assembly.

Can IRF8113 replace IRF8110 in existing designs?

Yes, with verification. Both share SO-8 packaging and 30 V rating, but IRF8113 has lower R_DS(on) (4.7 mΩ vs. 6.5 mΩ typ) and higher Q_g (24 nC vs. 18 nC). Layout and gate drive strength should be reviewed to ensure no unintended shoot-through due to faster switching edges.

IRF8113 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 17.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.6mOhm @ 17.2A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2910 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF8113 FAQ

1.How can I place an order for IRF8113 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF8113 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF8113 reliable?

The price and inventory of IRF8113 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8113 is usually 5 days.

3.What payment methods are accepted for IRF8113?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8113 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF8113?

IRF8113 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF8113 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF8113?

For technical support, including IRF8113 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8113 requirements.

6.How does Aetrix verify that IRF8113 is sourced from the original manufacturer or authorized distributors?

All IRF8113 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8113 meets industry standards.

7.What is the process for return or replacement of IRF8113?

All IRF8113 units undergo pre-shipment inspection (PSI). If there is an issue with IRF8113, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF8113 part is unused and in its original packaging.

Return procedure for IRF8113:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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