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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF8113GTRPBF

Name: IRF8113GTRPBF
Brand: Infineon Technologies
SKU: IRF8113GTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF8113GTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF8113GTRPBF.pdf

Description:: MOSFET N-CH 30V 17.2A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF8113GTRPBF from Infineon Technologies is a 30V, 13.8A N-channel HEXFET Power MOSFET in SO-8 package, optimized as a synchronous rectifier FET in isolated DC-DC converters and control FET in notebook CPU power stages. It delivers 4.7mΩ R_DS(on) at V_GS = 10V, 24nC total gate charge, and 100% tested gate resistance (R_G ≤ 1.5Ω), enabling high-efficiency, high-frequency switching in 12V–24V input systems.

For engineers reviewing the IRF8113GTRPBF datasheet, IRF8113GTRPBF pinout, IRF8113GTRPBF application, or IRF8113GTRPBF equivalent, key selection criteria include its low R_DS(on) at 4.5V drive, fully characterized avalanche rating (E_AS = 48mJ), body diode reverse recovery charge (Q_rr = 21–32nC), and SO-8 thermal performance (R_θJA = 50°C/W).

Technical Context

This MOSFET employs planar silicon HEXFET technology with integral body diode, designed for synchronous rectification where low conduction loss and fast, controlled turn-off are critical. Its gate charge profile (Q_gd/Q_gs1 ratio minimized) reduces susceptibility to C_dv/dt turn-on in high-dV/dt node applications like active-clamp forward or LLC secondary-side switching.

Thermal design leverages SO-8's junction-to-drain lead path (R_θJL = 20°C/W) for PCB copper heatsinking, while its linear derating factor (2.5W/°C above 70°C) supports sustained operation up to T_J = 150°C. Avalanche capability is validated per unclamped inductive test (I_AR = 13.3A, E_AS = 48mJ at T_J = 25°C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30V - Maximum blocking voltage compatible with 24V-input isolated DC-DC topologies.
R_DS(on) max	5.6mΩ @ V_GS = 10V - Enables <1.0W conduction loss at 13.8A RMS in 48V-output server PSUs.
Q_g typ.	24nC - Supports efficient 500kHz–1MHz switching with moderate gate driver current (≥2A peak).
Q_rr	21–32nC - Low reverse recovery charge minimizes cross-conduction loss and EMI in synchronous rectifiers.
R_θJA	50°C/W - Requires ≥2in² 2-oz copper pad for 13.8A continuous operation at ambient ≤70°C.
E_AS	48mJ - Rated single-pulse avalanche energy ensures robustness during output short-circuit or startup transients.
V_GS(th)	1.5–2.2V - Ensures reliable turn-on with 3.3V logic-level gate drivers in modern controller ICs.

Pinout & Package

IRF8113GTRPBF is housed in a standard SO-8 surface-mount package with exposed drain paddle for enhanced thermal conduction. The package complies with JEDEC MS-012AC and RoHS/lead-free/halogen-free requirements.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Internally connected to exposed thermal pad; primary current path and heat sink interface.
6	Gate (G)	Control terminal; requires low-impedance drive (<1.5Ω R_G verified) to suppress oscillation.
Source (S)	Source (S)	Pins 1–5 and 7–8 are source-connected; forms low-inductance return path for synchronous FET current.

Key Features

Feature	Design Value
Very low R_DS(on) at 4.5V V_GS	Enables direct drive from 5V or 4.5V PWM controllers without level-shifting, reducing BOM count.
Fully characterized avalanche voltage/current	Guarantees survivability under unclamped inductive switching stress (e.g., secondary-side fault in flyback).
100% tested R_G	Ensures consistent gate drive timing and eliminates risk of gate oscillation in high-speed sync rectifier layouts.
Low Q_gd/Q_gs1 ratio	Reduces C_dv/dt-induced false turn-on in high-dV/dt nodes, critical for reliability in LLC resonant converters.

Applications

Server PSU Secondary-Side Rectification

Notebook CPU Core Voltage Regulator

Use Scenario: 12V input, 1.0V/100A output synchronous buck converter in 1U rack server power supply.

IC Role / Device Role: Synchronous rectifier FET replacing Schottky diode to reduce conduction loss and improve efficiency >94% at full load.

Use Value: 4.7mΩ R_DS(on) cuts rectifier loss by ~65% vs. 40V Schottky, directly enabling higher power density and lower thermal footprint.

Use Scenario: Dual-phase 1.2V/40A VRM supplying Intel Core i7 processor in ultrabook platform.

IC Role / Device Role: Control FET (high-side switch) operating at 300–600kHz with 4.5V gate drive from integrated PWM controller.

Use Value: 24nC Q_g enables fast switching with minimal gate driver loss, supporting tight transient response and low output ripple.

Networking DC-DC Isolated Converter

Industrial PoE+ Midspan Power Supply

Use Scenario: 48V input, 12V/10A isolated forward converter powering line cards in enterprise switch.

IC Role / Device Role: Synchronous rectifier on secondary side, driven by self-driven or transformer-coupled gate signal.

Use Value: Low Q_rr (21nC typ.) prevents shoot-through during dead-time, improving light-load efficiency and reducing EMI filtering cost.

Use Scenario: 57V PoE+ midspan delivering up to 30W to remote IP camera via Category 5e cable.

IC Role / Device Role: Primary-side switch in active-clamp forward topology, handling 30V reflected output voltage.

Use Value: 48mJ E_AS rating withstands repetitive clamp energy during overcurrent events, eliminating need for external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 4.0mΩ @ 10V, Q_g = 27nC, SO-8 with enhanced thermal pad	Higher current rating (16.5A) but larger gate charge increases driver loss at >1MHz	Preferred for new designs requiring margin in 12V-output server PSUs with aggressive thermal constraints.
IPB80N04S4-02	R_DS(on) = 2.0mΩ @ 10V, TO-263 package, Q_g = 52nC	Lower R_DS(on) but larger package and gate charge limit switching frequency to ≤300kHz	Suitable when board space allows TO-263 and peak efficiency at 200kHz–300kHz is prioritized over size/cost.

Compared with SiR872DP-T1-GE3 and IPB80N04S4-02, IRF8113GTRPBF offers optimal balance of low gate charge (24nC), proven SO-8 thermal performance, and robust avalanche rating-making it ideal for space-constrained, high-frequency synchronous rectifier roles where driver loss and layout simplicity are critical.

Availability

IRF8113GTRPBF is available at Aetrix Electronics and suitable for server power supplies, notebook VRMs, networking DC-DC converters, and industrial PoE+ midspans requiring stable component supply and long-term manufacturability.

Supply support for IRF8113GTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

The IRF8113GTRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current for IRF8113GTRPBF at 70°C ambient?

The maximum continuous drain current is 13.8A at T_A = 70°C with proper PCB heatsinking (2in² 2-oz copper). This rating assumes SO-8 package mounted on FR-4 with minimum thermal vias to inner ground plane. Derating begins at 2.5W/°C above 70°C ambient, limiting usable current in sealed enclosures without forced airflow.

Does IRF8113GTRPBF support 4.5V gate drive in synchronous rectifier mode?

Yes - R_DS(on) is specified at 5.8mΩ max at V_GS = 4.5V, enabling reliable operation with self-driven or transformer-coupled gate circuits common in isolated forward and flyback converters. Gate threshold voltage (1.5–2.2V) ensures full enhancement even with gate drive droop under heavy load.

How is avalanche ruggedness validated for this MOSFET?

Avalanche energy (E_AS = 48mJ) and current (I_AR = 13.3A) are measured per JEDEC JESD24-11 using unclamped inductive switching test circuit with L = 0.5mH, V_DD = 15V, and T_J = 25°C. All units undergo 100% production testing for R_G, ensuring gate integrity during repeated avalanche events.

Can IRF8113GTRPBF be used as a control FET in a 600kHz VRM?

Yes - with Q_g = 24nC and Q_gd = 8.5nC, it achieves clean 8.9ns rise and 3.5ns fall times at 12V gate drive, supporting 600kHz operation with <5% duty-cycle loss. Layout must minimize gate loop inductance (<3nH) and use dedicated Kelvin source connection to avoid Miller-induced oscillation.

IRF8113GTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 17.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.6mOhm @ 17.2A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2910 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF8113GTRPBF FAQ

1.How can I place an order for IRF8113GTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF8113GTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF8113GTRPBF reliable?

The price and inventory of IRF8113GTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8113GTRPBF is usually 5 days.

3.What payment methods are accepted for IRF8113GTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8113GTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF8113GTRPBF?

IRF8113GTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF8113GTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF8113GTRPBF?

For technical support, including IRF8113GTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8113GTRPBF requirements.

6.How does Aetrix verify that IRF8113GTRPBF is sourced from the original manufacturer or authorized distributors?

All IRF8113GTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8113GTRPBF meets industry standards.

7.What is the process for return or replacement of IRF8113GTRPBF?

All IRF8113GTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8113GTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF8113GTRPBF part is unused and in its original packaging.

Return procedure for IRF8113GTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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