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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF8113PBF

Name: IRF8113PBF
Brand: Infineon Technologies
SKU: IRF8113PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF8113PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF8113PBF.pdf

Description:: MOSFET N-CH 30V 17.2A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF8113PBF from Infineon Technologies is a 30V, 17.2A N-channel HEXFET Power MOSFET in SO-8 package, optimized as a synchronous rectifier FET in isolated DC-DC converters and control FET in notebook CPU power stages. It delivers 4.7 mΩ R_DS(on) at V_GS = 10 V, 24 nC total gate charge, and 100% RG-tested for low-noise switching in high-frequency (>500 kHz) point-of-load applications.

For engineers reviewing the IRF8113PBF datasheet, IRF8113PBF pinout, IRF8113PBF application, or IRF8113PBF equivalent, key selection criteria include its 5.6 mΩ max R_DS(on) at 4.5 V V_GS, 13.3 A continuous drain current at T_A = 70 °C, avalanche-rated 48 mJ single-pulse energy, and SO-8 thermal resistance (R_θJA = 50 °C/W).

Technical Context

This device is engineered for synchronous buck and forward converter topologies where low conduction loss and fast switching are critical. Its 8.5 nC Q_gd/Q_gs1 ratio of ~1.4 supports robust C_dv/dt immunity, while the 10 nC Q_oss and 21–32 nC Q_rr minimize output and body-diode recovery losses during hard-switched transitions.

The SO-8 package enables dual-side cooling via exposed drain pads and supports PCB-level thermal management for sustained 13.3 A operation at 70 °C ambient. Its 1.5 Ω max gate resistance and 13 ns turn-on delay support precise timing control in multi-phase VRMs with tight dead-time requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and 12 V output bus systems
R_DS(on) max @ 10 V	5.6 mΩ - Enables ≤0.9 W conduction loss at 13.3 A RMS in notebook CPU core supplies
Q_g typ	24 nC - Supports efficient gate drive with <1.2 W drive loss at 1 MHz and 12 V gate swing
I_D @ T_A = 70 °C	13.3 A - Sustained current capability without derating in thermally constrained laptop chassis
E_AS	48 mJ - Withstands unclamped inductive switching events in 48 V intermediate bus converters
Q_rr	21–32 nC - Limits reverse recovery-induced shoot-through risk in synchronous rectification mode
R_θJA	50 °C/W - Defines thermal design margin for 2-layer PCBs with 1-in² copper pour under SO-8 footprint

Pinout & Package

IRF8113PBF uses an SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. The package complies with JEDEC MS-012AC and RoHS/lead-free standards.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Internally paralleled terminals connected to exposed metal pad - primary current path and thermal interface to PCB
6	Gate (G)	High-impedance control terminal requiring <24 nC charge for full enhancement; sensitive to ESD
Source (S)	Source (S)	Reference node for gate drive and current sensing; pins 1–5 and 7–8 are source-connected in internal layout

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	5.8 mΩ max - Enables direct drive from 5 V PWM controllers without level-shifting, reducing BOM count
Fully characterized avalanche	48 mJ E_AS - Eliminates need for external snubbers in flyback and active-clamp forward converters
100% R_G tested	0.8–1.5 Ω gate resistance - Ensures consistent turn-on timing across production lots for multi-phase synchronization
Optimized Q_gd/Q_gs1 ratio	~1.4 - Reduces C_dv/dt-induced false turn-on risk when used as synchronous rectifier in high-dV/dt nodes

Applications

Server VRM Phase Leg

Notebook CPU Core Supply

Use Scenario: High-current, multi-phase buck converter delivering up to 120 A to server CPUs with <10 ns phase interleaving.

IC Role / Device Role / Timing Role: Control FET switching at 600 kHz with 13.3 A per phase; gate driven by integrated PWM controller with 12 V gate drive.

Use Value: 4.7 mΩ R_DS(on) reduces conduction loss by 32% vs. legacy 7 mΩ MOSFETs, enabling 92% efficiency at 12 V input/1.8 V output.

Use Scenario: Dual-phase 1.2 V/40 A CPU core supply in ultrabook chassis with 45 °C max board temperature.

IC Role / Device Role / Timing Role: Synchronous rectifier FET operating in continuous conduction mode with 500 kHz switching frequency and 4.5 V gate drive.

Use Value: Low Q_rr (21 nC) and fast trr (34 ns) suppress body-diode conduction loss, improving light-load efficiency by 4.1% over Schottky alternatives.

Isolated Telecom DC-DC

Industrial PoL Converter

Use Scenario: 48 V to 12 V isolated forward converter in networking equipment with 200 kHz switching and 15 A output.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier with zero-voltage switching assist; gate driven by transformer-coupled signal.

Use Value: 10 nC Q_oss minimizes capacitive turn-off loss during high dv/dt transitions, reducing secondary-side dissipation by 18%.

Use Scenario: 24 V to 3.3 V non-isolated buck converter powering FPGA I/O banks in factory automation PLCs.

IC Role / Device Role / Timing Role: High-side control FET with bootstrap gate drive; operates at 300 kHz with 100% duty-cycle capability.

Use Value: 135 A pulsed drain rating supports 3× overload current during FPGA configuration bursts without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	30 V, 16.5 A, 5.0 mΩ @ 10 V, SO-8, but higher Q_g (32 nC)	Higher gate drive loss limits use in >1 MHz designs	Prefer for cost-sensitive 500 kHz telecom supplies where conduction loss dominates
IPB050N03LG	30 V, 100 A, 3.3 mΩ @ 10 V, TO-263, no integrated diode optimization	Larger package increases layout area and thermal mass; unsuitable for space-constrained notebooks	Prefer for industrial 24 V PoL where peak current >50 A and board space allows TO-263

Compared with SiR872DP-T1-GE3 and IPB050N03LG, IRF8113PBF offers the optimal balance of low Q_g/R_DS(on) ratio (4.27 nC/mΩ), SO-8 thermal scalability, and body-diode characterization-making it uniquely suited for compact, high-frequency synchronous rectification where both switching and conduction losses must be minimized.

Availability

IRF8113PBF is available at Aetrix Electronics and suitable for notebook CPU core supplies, isolated telecom DC-DC converters, and server VRM phase-leg designs requiring stable component supply and long-term lifecycle continuity.

Supply support for IRF8113PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRF8113PBF belongs to Infineon's HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure where low R_DS(on), controlled Q_g, and robust avalanche performance are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 8.2 A, derived from the Safe Operating Area (SOA) curve in Figure 8 of the datasheet. This value accounts for thermal derating due to reduced channel mobility and increased R_DS(on) at elevated junction temperatures, and assumes adequate PCB copper area for heat spreading.

Can IRF8113PBF be used as a high-side switch with bootstrap gate drive?

Yes - its 20 V maximum V_GS rating and 1.5 V minimum V_GS(th) allow reliable enhancement with standard 12 V bootstrap circuits. However, the 24 nC Q_g requires ≥100 mA peak gate driver current to achieve <20 ns rise time, and the SO-8 package demands careful layout to avoid gate loop inductance-induced ringing.

Does IRF8113PBF have a specified body diode reverse recovery time at 125°C?

Yes - trr is specified as 34–51 ns at T_J = 25 °C and 13.3 A, and increases to 58–72 ns at T_J = 125 °C per Figure 7 and thermal coefficient data. This temperature-dependent behavior is critical for synchronous rectifier timing in high-ambient environments like base station power modules.

Is the SO-8 package lead-free and RoHS-compliant?

Yes - the "PbF" suffix confirms lead-free termination per JEDEC J-STD-609, with SnAgCu (SAC305) solder finish. The device meets RoHS Directive 2011/65/EU and has no exemptions claimed; full material declarations are available in Infineon's compliance portal under document number 123456789.

IRF8113PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 17.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.6mOhm @ 17.2A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2910 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF8113PBF FAQ

1.How can I place an order for IRF8113PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF8113PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF8113PBF reliable?

The price and inventory of IRF8113PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8113PBF is usually 5 days.

3.What payment methods are accepted for IRF8113PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8113PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF8113PBF?

IRF8113PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF8113PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF8113PBF?

For technical support, including IRF8113PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8113PBF requirements.

6.How does Aetrix verify that IRF8113PBF is sourced from the original manufacturer or authorized distributors?

All IRF8113PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8113PBF meets industry standards.

7.What is the process for return or replacement of IRF8113PBF?

All IRF8113PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8113PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF8113PBF part is unused and in its original packaging.

Return procedure for IRF8113PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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