Infineon Technologies IRF8252PBF

Overview

IRF8252PBF from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for synchronous buck converter topologies. It delivers 2.7 mΩ R_DS(on) at V_GS = 10 V, 35 nC total gate charge, and 25 V V_DSS, enabling high-efficiency power delivery in notebook CPU VRMs and isolated DC-DC converters.

For engineers reviewing the IRF8252PBF datasheet, IRF8252PBF pinout, IRF8252PBF application, or IRF8252PBF equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, ultra-low gate impedance (0.61 Ω typ.), fully characterized avalanche energy (231 mJ), and RoHS-compliant halogen-free construction.

Technical Context

This MOSFET employs trench-gate silicon technology to minimize conduction and switching losses simultaneously. Its low threshold voltage (1.35–2.35 V) and steep transconductance (89 S typ.) support fast, robust turn-on with 4.5 V logic-level gate drive - critical for high-frequency synchronous rectification.

The device integrates a co-packaged body diode with 19–29 ns reverse recovery time and 12–18 nC Q_rr, enabling efficient unclamped inductive switching. Thermal design is supported by R_θJA = 50 °C/W and R_θJL = 20 °C/W, allowing direct thermal coupling to PCB copper in compact VRM layouts.

Key Specifications

Pinout & Package

SO-8 surface-mount package with exposed drain paddle for enhanced thermal performance; standard pin pitch (1.27 mm), body size 4.9 × 6.0 mm, compliant with IPC-7351B SOIC-8 footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with SiR872DP-T1-GE3 and IPB80N04S4-02, the IRF8252PBF offers the best balance of low gate charge (35 nC), tightly specified body diode recovery (12–18 nC Q_rr), and SO-8 thermal performance - making it optimal for space-constrained, high-frequency synchronous buck designs in portable electronics.

Availability

IRF8252PBF is available at Aetrix Electronics and suitable for notebook CPU VRMs, isolated DC-DC converter synchronous rectifiers, and Netcom point-of-load converters requiring stable component supply and long-term lifecycle assurance.

Supply support for IRF8252PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRF HEXFET series targets high-efficiency power conversion in portable and communications equipment, emphasizing low R_DS(on), fast switching, and robust avalanche capability for synchronous rectification and VRM applications.

FAQ

What is the maximum recommended gate drive voltage for IRF8252PBF?

The absolute maximum V_GS rating is ±20 V, but the device is characterized and optimized for operation between 4.5 V and 10 V. Driving above 12 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and ESD risk. For reliable long-term operation in notebook VRMs, 5 V or 10 V logic-level drive is recommended per Infineon's application note AN-1084.

Does IRF8252PBF require a gate resistor in typical synchronous buck applications?

Yes - a 1–5 Ω gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with the device's 0.61 Ω intrinsic R_g and 5305 pF C_iss. Without it, overshoot exceeding 20 V can occur during 10 V drive transitions, risking gate oxide degradation. Layout-dependent values should be validated using the gate charge waveform test circuit in Figure 15 of the datasheet.

Can IRF8252PBF replace a Schottky diode in secondary-side rectification?

Yes - its integrated body diode has V_SD ≤ 1.0 V and Q_rr = 12–18 nC, enabling efficient synchronous rectification in isolated DC-DC converters. However, gate drive timing must align precisely with primary switch transitions to avoid cross-conduction. Dedicated SR controllers (e.g., IR1167) or transformer-coupled drive with adjustable dead time are required for reliable replacement.

How does the SO-8 package thermal performance compare to DPAK for this device?

The SO-8 package achieves R_θJA = 50 °C/W on 1-in² 2-oz Cu PCB, versus ~40 °C/W for DPAK under identical conditions - a 20% higher junction-to-ambient resistance. However, SO-8's smaller footprint (4.9 × 6.0 mm) allows tighter phase interleaving in multi-phase VRMs, offsetting thermal penalty via reduced RMS current per phase and lower overall system loss.