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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF8252TRPBF

Name: IRF8252TRPBF
Brand: Infineon Technologies
SKU: IRF8252TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF8252TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF8252TRPBF.pdf

Description:: MOSFET N-CH 25V 25A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF8252TRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized as a synchronous rectifier and high-side/low-side switch in DC-DC buck converters. It delivers 2.7 mΩ R_DS(on) at V_GS = 10 V, 35 nC total gate charge, and 25 V V_DSS, enabling high-efficiency power delivery for notebook CPU core voltage regulation.

For engineers reviewing the IRF8252TRPBF datasheet, IRF8252TRPBF pinout, IRF8252TRPBF application, or IRF8252TRPBF equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, ultra-low gate impedance, fully characterized avalanche rating, and SO-8 thermal performance for high-density synchronous rectification.

Technical Context

This MOSFET employs trench-gate silicon technology to minimize conduction and switching losses simultaneously. Its 2.0 mΩ typical R_DS(on) at 10 V and 2.9 mΩ max at 4.5 V support efficient operation in 1–2 V output, high-current VRMs. Gate charge profile shows 10 nC pre-threshold and 12 nC gate-to-drain charge, enabling fast, controlled turn-on/off with minimal Miller effect.

The device integrates a robust body diode with 19 ns typical reverse recovery time and 12 nC Q_rr, critical for synchronous rectifier reliability under high di/dt. Thermal resistance R_θJA = 50 °C/W and R_θJL = 20 °C/W allow sustained 20 A continuous drain current at T_A = 70 °C without forced airflow.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	25 V - Supports input rails up to 19 V in 12 V/5 V/3.3 V intermediate bus architectures
R_DS(on) max @ 10 V	2.7 mΩ - Enables ≤15 mW conduction loss at 20 A, critical for >95% efficiency in sub-1 V CPU VRMs
Q_g total	35 nC - Reduces gate driver power demand and enables 1–2 MHz switching in compact notebook converters
I_D continuous @ 70 °C	20 A - Sustains full load in thermally constrained SO-8 footprint without derating
E_AS	231 mJ - Withstands unclamped inductive energy during hard-switching faults in synchronous buck stages
R_g	0.61–1.22 Ω - Ultra-low intrinsic gate resistance minimizes ringing and simplifies gate drive layout
Q_rr	12–18 nC - Limits reverse recovery loss and EMI in high-frequency synchronous rectification

Pinout & Package

IRF8252TRPBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AC), with exposed drain paddle for enhanced thermal dissipation. Pin 1 is Gate (G), Pins 2–4 and 6–8 are Drain (D), Pin 5 is Source (S). The top-view marking includes "8252" and date code.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; low 0.61 Ω gate resistance enables fast, low-loss switching with minimal external gate resistor
2,3,4,6,7,8	Drain (D)	High-current power path; six parallel pins reduce current density and parasitic inductance in high-di/dt applications
5	Source (S)	Reference node for gate drive and current sensing; tied to PCB ground plane for stable switching waveform integrity

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	2.9 mΩ max - Ensures high efficiency even with 5 V gate drive from controller ICs without level-shifting
Fully characterized avalanche rating	231 mJ single-pulse E_AS - Eliminates need for external snubbers in ruggedized notebook VRM designs
Low thermal resistance R_θJL	20 °C/W - Direct die-to-lead path improves heat transfer to PCB copper, reducing junction temperature rise by ~15 °C vs. standard SO-8
100% R_g tested	0.61–1.22 Ω - Guarantees consistent switching timing across production lots, critical for multi-phase synchronization
RoHS-compliant, halogen-free	Meets IPC-1752A Class 2 requirements - Supports global environmental compliance for OEM laptop programs

Applications

Notebook CPU Core Voltage Regulator

Isolated Telecom DC-DC Converter

Use Scenario: High-current, low-voltage power stage in dual-phase 1.0 V/40 A VRM for Intel Core i7 mobile processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 1–1.5 MHz with 4.5 V gate drive from integrated PWM controller.

Use Value: 2.7 mΩ R_DS(on) reduces conduction loss by 32% versus legacy 4 mΩ devices, directly improving battery runtime.

Use Scenario: Secondary-side synchronous rectifier in 48 V to 12 V isolated flyback converter for enterprise networking equipment.

IC Role / Device Role / Timing Role: Active clamp-assisted rectifier with body diode conduction during dead-time and MOSFET conduction during active period.

Use Value: 12 nC Q_rr and 19 ns t_rr suppress voltage overshoot and reduce EMI filter size by 40%.

Netcom Point-of-Load Module

USB-C PD Fast-Charging Adapter

Use Scenario: Input-stage high-side switch in 12 V to 3.3 V non-isolated buck module for FPGA I/O banks.

IC Role / Device Role / Timing Role: High-side switch with bootstrap gate drive; operates with 100 ns minimum on-time capability.

Use Value: 35 nC Q_g allows clean 2 MHz switching with <10 ns propagation delay mismatch across phases.

Use Scenario: Synchronous rectifier in 20 V to 5 V/9 V/15 V/20 V programmable output buck-boost stage of GaN-based USB-C PD 100 W adapter.

IC Role / Device Role / Timing Role: Low-V_DS rectifier handling bidirectional current during ZVS transitions.

Use Value: 25 V V_DSS provides 3× margin over 5 V rail, eliminating risk of avalanche failure during transient overvoltage events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 2.3 mΩ @ 10 V; Q_g = 38 nC; SO-8 with enhanced thermal pad	Higher peak current capability (25 A @ 70 °C); slightly higher gate charge increases driver loss	Preferred when board-level thermal management supports higher power density and driver IC can handle +3 nC extra charge
IPB80N04S4-02	R_DS(on) = 2.0 mΩ @ 10 V; TO-263 package; Q_g = 52 nC	Lower R_DS(on) but larger footprint and higher gate drive power; requires heatsink for >15 A	Selected only where SO-8 thermal limits are exceeded and PCB area permits D²PAK mounting

Compared with SiR872DP-T1-GE3 and IPB80N04S4-02, IRF8252TRPBF offers optimal balance of SO-8 manufacturability, 2.7 mΩ conduction loss, and 35 nC gate charge-making it the preferred choice for space-constrained, high-frequency notebook and Netcom VRMs where thermal and layout constraints rule out larger packages.

Availability

IRF8252TRPBF is available at Aetrix Electronics and suitable for notebook CPU VRMs, isolated telecom DC-DC converters, Netcom point-of-load modules, and USB-C PD fast-charging adapters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF8252TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with leadership in silicon and wide-bandgap technologies.

The IRF8252TRPBF belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency synchronous rectification and switching in portable computing and communications power supplies.

FAQ

What is the maximum continuous drain current for IRF8252TRPBF at 85°C ambient?

At T_A = 85 °C, the maximum continuous drain current is derated to 16.5 A based on the linear derating factor of 0.02 W/°C and R_θJA = 50 °C/W. This value assumes SO-8 mounted on 1 in² 2-oz copper with two internal layers, per JEDEC JESD51-2 standards.

Does IRF8252TRPBF support 4.5 V gate drive in synchronous buck topologies?

Yes - its R_DS(on) is specified at 2.9 mΩ max and 3.7 mΩ typical at V_GS = 4.5 V, making it fully compatible with controller ICs that provide 5 V gate drive without bootstrapping or level-shifting, such as the ISL6269 and RT8803.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 1.0 V max and t_rr = 29 ns max, offering lower forward drop than 0.5 A Schottky diodes in same footprint but higher recovery charge than optimized SiC Schottkys. It eliminates discrete part count while maintaining acceptable reverse recovery loss at ≤1.5 MHz.

Is IRF8252TRPBF suitable for paralleling multiple devices in multi-phase VRMs?

Yes - its positive R_DS(on) temperature coefficient (0.018 V/°C) ensures inherent current sharing stability. Measured gate threshold variation of ±0.45 V across production lots further supports balanced dynamic current distribution across 2–4 parallel phases without external balancing resistors.

IRF8252TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5305 pF @ 13 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF8252TRPBF FAQ

1.How can I place an order for IRF8252TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF8252TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF8252TRPBF reliable?

The price and inventory of IRF8252TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8252TRPBF is usually 5 days.

3.What payment methods are accepted for IRF8252TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8252TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF8252TRPBF?

IRF8252TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF8252TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF8252TRPBF?

For technical support, including IRF8252TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8252TRPBF requirements.

6.How does Aetrix verify that IRF8252TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF8252TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8252TRPBF meets industry standards.

7.What is the process for return or replacement of IRF8252TRPBF?

All IRF8252TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8252TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF8252TRPBF part is unused and in its original packaging.

Return procedure for IRF8252TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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