Infineon Technologies IRF8252TRPBF-1

Overview

IRF8252TRPBF-1 from Infineon Technologies is a 25 V, 25 A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized as a synchronous rectifier in isolated DC-DC converters and as a high-efficiency synchronous MOSFET in notebook processor power stages. It features 2.7 mΩ R_DS(on) at V_GS = 10 V, 35 nC total gate charge, and integrated body diode with 19 ns reverse recovery time.

For engineers reviewing the IRF8252TRPBF-1 datasheet, IRF8252TRPBF-1 pinout, IRF8252TRPBF-1 application, or IRF8252TRPBF-1 equivalent, key selection criteria include low conduction loss at 25 A, fast switching performance (t_r = 32 ns, t_f = 12 ns), thermal robustness (R_θJA = 50 °C/W), and SO-8 compatibility for multi-vendor board reuse.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage of 1.35–2.35 V and exhibits strong temperature stability: R_DS(on) increases only ~1.6× from 25 °C to 150 °C. Its low 2.0 mΩ typical on-resistance at 10 V drive enables high-efficiency synchronous rectification in 12 V input/1–3.3 V output DC-DC stages.

The device integrates a robust intrinsic body diode rated for 200 A pulsed source current and 12–18 nC reverse recovery charge, supporting hard-switched and resonant topologies. Gate charge profile (Q_gs2 = 4.6 nC, Q_gd = 12 nC) supports precise timing control in high-frequency (>500 kHz) synchronous buck and flyback controllers.

Key Specifications

Pinout & Package

IRF8252TRPBF-1 uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 8 for enhanced thermal conduction. The package measures 4.9 × 6.0 mm with 1.27 mm lead pitch and meets MSL1 moisture sensitivity level.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with SiR872DP-T1-GE3 and IPB80N04S4-02, IRF8252TRPBF-1 offers optimal balance of SO-8 manufacturability, 25 A capability, and 35 nC gate drive burden-making it ideal for space-constrained, high-volume notebook and adapter designs where thermal margin is managed via layout rather than package change.

Availability

IRF8252TRPBF-1 is available at Aetrix Electronics and suitable for notebook CPU VRMs, isolated telecom DC-DC converters, and USB-C PD adapters requiring stable component supply and JEDEC-standard SO-8 compatibility.

Supply support for IRF8252TRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

This device belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, telecom, and consumer power systems where low R_DS(on), fast switching, and SO-8 interoperability are critical.

FAQ

What is the maximum continuous drain current at 70 °C ambient?

The IRF8252TRPBF-1 supports 20 A continuous drain current at T_A = 70 °C with proper PCB copper area (≥1 in² 2-oz copper). This rating assumes SO-8 mounting on standard FR-4 with no forced airflow and accounts for R_θJA = 50 °C/W derating above 25 °C ambient.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage range of 1.35–2.35 V and fully turns off with 0 V gate drive. Applying –5 V is unnecessary and not recommended, as V_GS rating is only ±20 V and negative bias adds no benefit to switching speed or shoot-through immunity in synchronous buck topologies.

Can IRF8252TRPBF-1 be used in avalanche-rated circuits?

Yes-it is characterized for unclamped inductive switching with E_AS = 231 mJ at T_J = 25 °C. However, avalanche operation is not intended for continuous use; it serves only as a ruggedness metric. Designers must ensure all operating conditions remain within the SOA curve (Fig 8) and avoid repetitive avalanche stress.

Is the body diode suitable for reverse recovery in ZVS circuits?

Yes. With t_rr = 19–29 ns and Q_rr = 12–18 nC, the intrinsic body diode supports zero-voltage switching in LLC and phase-shifted full-bridge converters. Its soft recovery characteristic (low di/dt-induced voltage overshoot) reduces EMI and gate ringing during commutation.