My Inquiry
My Account
Infineon Technologies IRF8301MTRPBF
- Part No.:
- IRF8301MTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MT
- Datasheet:
-
IRF8301MTRPBF.pdf
- Description:
- MOSFET N-CH 30V 34A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:8,537
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF8301MTRPBF from Infineon Technologies is a 30V N-channel DirectFET™ Power MOSFET optimized for high-current, high-speed switching in power tools and motor drives. It delivers 1.3 mΩ RDS(on) @ 10 V, 51 nC total gate charge, ultra-low 1.4 °C/W junction-to-case thermal resistance, and dual-sided cooling capability in a 5×6 mm footprint with 0.7 mm profile.
For engineers reviewing the IRF8301MTRPBF datasheet, IRF8301MTRPBF pinout, IRF8301MTRPBF application, or IRF8301MTRPBF equivalent, key selection criteria include low conduction loss at high current (250 A pulsed), fast switching performance (tr = 30 ns, tf = 17 ns), body diode recovery (Qrr = 45–68 nC), and compatibility with vapor-phase and convection reflow soldering per AN-1035.
Technical Context
This MOSFET uses HEXFET® silicon in a copper-clip DirectFET MT package, enabling symmetric top-and-bottom thermal paths and minimizing parasitic inductance. Its gate threshold voltage (1.35–2.35 V) supports 4.5 V logic-level drive, while the 1.9 mΩ RDS(on) @ 4.5 V ensures efficient operation in battery-powered systems.
The device integrates a robust intrinsic body diode with 0.77–1.0 V forward voltage and 27–41 ns reverse recovery time, supporting unclamped inductive switching. Avalanche energy rating (EAS = 1000 mJ @ IAS = 25 A) enables reliable operation under transient overloads without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage for 12–24 V battery systems |
| RDS(on) @ 10 V | 1.3 mΩ - Enables ≤1.3 W conduction loss at 32 A continuous current |
| RDS(on) @ 4.5 V | 1.9 mΩ - Supports direct drive from 5 V microcontrollers or gate drivers |
| Qg | 51 nC - Low gate charge reduces driver power and enables >100 kHz switching |
| RθJC | 1.4 °C/W - Dual-sided cooling allows >200 W power dissipation with proper heatsinking |
| ID (pulsed) | 250 A - Sustains short-duration motor stall or surge currents in cordless tools |
| Qrr | 45–68 nC - Predictable body diode recovery minimizes voltage overshoot in H-bridge freewheeling |
Pinout & Package
The IRF8301MTRPBF uses the DirectFET MT package: a 5×6 mm surface-mount copper-clip construction with exposed top-side drain and bottom-side source/drain terminals. No discrete leads - all connections are via solderable metal pads on PCB top and bottom layers.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top-side large pad | Drain (D) | Primary high-current path; thermally coupled to heatsink via top-side cooling |
| Bottom-side inner pads | Source (S) | Low-impedance return path; electrically and thermally connected to PCB ground plane |
| Bottom-side outer pads | Drain (D) | Secondary drain connection; enables symmetrical current distribution and dual-sided thermal extraction |
| Small peripheral pad | Gate (G) | Control terminal; isolated copper trace required to minimize ringing during fast switching |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 1.3 mΩ @ 10 V enables <1 W conduction loss at 25 A in 24 V power tool motor drivers |
| Dual-sided cooling | Top-side drain + bottom-side drain pads allow simultaneous thermal interface to both PCB and external heatsink |
| Ultra-low package inductance | Minimizes VDS overshoot during turn-off, reducing need for snubbers in high-di/dt motor control |
| Logic-level gate drive | 1.9 mΩ RDS(on) @ 4.5 V permits direct interface with 5 V MCU GPIO or integrated gate drivers |
| Robust avalanche rating | 1000 mJ single-pulse EAS supports reliable operation during motor commutation transients |
Applications
| Power Tool Motor Drive | Cordless Drill H-Bridge |
|---|---|
Use Scenario: High-torque brushed DC motor control in 18–24 V cordless drills, subject to frequent stall and surge currents. IC Role / Device Role / Timing Role: High-side and low-side switch in half-bridge configuration; handles bidirectional current up to 250 A pulsed. Use Value: 1.3 mΩ RDS(on) and 1.4 °C/W RθJC limit temperature rise during burst-mode operation, extending battery runtime and tool duty cycle. | Use Scenario: Bidirectional motor control in compact cordless screwdrivers requiring rapid direction reversal. IC Role / Device Role / Timing Role: Synchronous rectifier and freewheeling switch; body diode conducts reverse current during PWM off-time. Use Value: 45–68 nC Qrr and 27–41 ns trr reduce switching losses and voltage spikes during commutation, improving EMC and MOSFET reliability. |
| BLDC Inverter Stage | Industrial Battery Pack Protection |
Use Scenario: 3-phase inverter stage in 24 V brushless power tools, operating at 20–50 kHz PWM frequency. IC Role / Device Role / Timing Role: Low-side switching element; switched by dedicated gate driver with 1.8 Ω gate resistance. Use Value: 51 nC Qg and 30 ns tr/17 ns tf enable efficient high-frequency operation while maintaining <5 W total losses at 15 A RMS. | Use Scenario: Overcurrent and short-circuit protection switch in 20–30 V industrial battery packs with active balancing. IC Role / Device Role / Timing Role: Primary discharge path switch; activated during fault conditions to isolate cells or dissipate energy. Use Value: 250 A pulsed rating and 1000 mJ EAS ensure safe interruption of >100 A faults without destructive failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF8303MTRPBF | Same DirectFET MT package; higher RDS(on) (2.0 mΩ @ 10 V), lower Qg (38 nC) | Better suited for higher-frequency, lower-current switching where gate drive strength is limited | Select when prioritizing faster switching over lowest conduction loss |
| SiR872DP-T1-GE3 | SO-8 package; 1.4 mΩ RDS(on) @ 10 V; 62 nC Qg; no dual-sided cooling | Limited to single-sided PCB cooling; lower peak current (192 A) and avalanche rating (600 mJ) | Select when legacy SO-8 layout reuse is required and thermal headroom exists |
Compared with IRF8301MTRPBF, IRF8303MTRPBF trades conduction efficiency for reduced gate drive demand, while SiR872DP-T1-GE3 sacrifices thermal performance and ruggedness for board-level compatibility-making IRF8301MTRPBF optimal for space-constrained, high-power-density power tool inverters.
Availability
IRF8301MTRPBF is available at Aetrix Electronics and suitable for power tool motor drives, cordless drill H-bridges, BLDC inverter stages, and industrial battery pack protection requiring stable component supply and high-reliability power switching.
Supply support for IRF8301MTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The DirectFET™ product line was engineered specifically for high-efficiency, high-power-density motor control and battery-powered systems-emphasizing ultra-low RDS(on), minimized package inductance, and dual-sided thermal management.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The IRF8301MTRPBF supports 27 A continuous drain current at TA = 70°C with VGS = 10 V, assuming standard PCB mounting on 1 in² copper. This rating assumes adequate airflow and thermal vias to internal ground planes; actual current must be derated if case temperature exceeds 70°C or if PCB copper area is reduced.
Is the IRF8301MTRPBF compatible with lead-free reflow soldering?
Yes - the DirectFET MT package is qualified for lead-free reflow per JEDEC J-STD-020, with peak soldering temperature up to 260°C. The recommended profile follows Infineon Application Note AN-1035, including controlled ramp rates and dwell times to prevent delamination or voiding in the copper-clip structure.
Does this MOSFET require a gate resistor for stability?
A gate resistor (typically 1.0–5.0 Ω) is required to dampen gate ringing caused by interaction between gate drive impedance and the device's 1.0–3.0 Ω intrinsic gate resistance. Without it, fast switching edges may induce oscillation, increasing EMI and risking false turn-on due to dv/dt coupling.
Can the body diode be used for synchronous rectification?
No - the intrinsic body diode is not optimized for synchronous rectification. Its 0.77–1.0 V forward voltage and 45–68 nC reverse recovery charge cause higher conduction and switching losses than a dedicated Schottky or FET-based synchronous rectifier. Use only for freewheeling or clamping in non-critical paths.
IRF8301MTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MT
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 34A (Ta), 192A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.5mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 77 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6140 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 89W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MT
IRF8301MTRPBF FAQ
1.How can I place an order for IRF8301MTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF8301MTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF8301MTRPBF reliable?
The price and inventory of IRF8301MTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8301MTRPBF is usually 5 days.
3.What payment methods are accepted for IRF8301MTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8301MTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF8301MTRPBF?
IRF8301MTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF8301MTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF8301MTRPBF?
For technical support, including IRF8301MTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8301MTRPBF requirements.
6.How does Aetrix verify that IRF8301MTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF8301MTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8301MTRPBF meets industry standards.
7.What is the process for return or replacement of IRF8301MTRPBF?
All IRF8301MTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8301MTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF8301MTRPBF part is unused and in its original packaging.
Return procedure for IRF8301MTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF8301MTRPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
