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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF8302MTR1PBF

Name: IRF8302MTR1PBF
Brand: Infineon Technologies
SKU: IRF8302MTR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF8302MTR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF8302MTR1PBF.pdf

Description:: MOSFET N CH 30V 31A MX

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF8302MTR1PBF from Infineon Technologies is a 30V dual-function Power MOSFET with integrated monolithic Schottky diode in DirectFET® MX package, delivering 1.4 mΩ R_DS(on) @ 10 V, 35 nC total gate charge, and ultra-low 0.7 mm profile. It is optimized for synchronous buck converter high-side and low-side (Sync FET) sockets in CPU core DC-DC converters.

For engineers reviewing the IRF8302MTR1PBF datasheet, IRF8302MTR1PBF pinout, IRF8302MTR1PBF application, or IRF8302MTR1PBF equivalent, key selection criteria include on-resistance vs. gate voltage behavior, Q_rr reduction via integrated Schottky diode, dual-sided cooling capability, and compatibility with existing SO-8 footprint layouts.

Technical Context

This MOSFET employs HEXFET® silicon combined with DirectFET® MX packaging to achieve industry-leading conduction and switching loss balance. Its gate threshold voltage (1.8 V typ.) and low Q_gd/Q_gs2 ratio (8.9 nC / 5.1 nC) support fast, controlled turn-on/turn-off in high-frequency (>1 MHz) synchronous buck topologies.

The integrated Schottky diode replaces the body diode in reverse conduction, reducing Q_rr to 40 nC (typ.) and eliminating minority-carrier recovery delay. Thermal performance is enhanced by dual-sided cooling - junction-to-PCB thermal resistance is 1.0 °C/W, and R_θJC is 1.2 °C/W - enabling high-current operation at elevated ambient temperatures.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum drain-source blocking voltage for 12 V input rail applications with margin
R_DS(on) @ 10 V	1.4 mΩ - Enables ≤10 mW conduction loss at 31 A continuous drain current
Q_g total	35 nC - Low gate drive energy supports efficient 500 kHz–2 MHz switching without excessive driver loss
Q_rr	40 nC - Integrated Schottky diode cuts reverse recovery charge by >85% vs. standard body diode
R_θJ-PCB	1.0 °C/W - Dual-sided cooling enables direct thermal path to PCB copper, critical for compact DC-DC modules
I_D @ T_C = 25°C	260 A - Peak pulsed current rating supports high transient load demands in microprocessor VRMs
V_GS(th)	1.8 V (typ.) - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V gate drivers

Pinout & Package

DirectFET® MX package: surface-mount, double-sided thermal interface, 0.7 mm height, SO-8 footprint-compatible (6.35 × 5.05 mm), copper substrate with exposed drain on top and bottom surfaces.

Pin/Terminal	Circuit Role	Design Meaning
Top Drain (D1)	Drain terminal (top side)	Primary high-current output path; thermally coupled to heatsink or PCB copper pour
Bottom Drain (D2)	Drain terminal (bottom side)	Enables dual-sided cooling; electrically identical to D1, used for thermal spreading
Source (S)	Source connection	Low-inductance source node; connects to power ground plane with minimal loop area
Gate (G)	Control input	Low-capacitance gate node (C_iss = 6030 pF); requires <2 Ω gate resistor for optimal switching control

Key Features

Feature	Design Value
Integrated monolithic Schottky diode	Reduces Q_rr to 40 nC and eliminates reverse recovery tail, lowering sync-FET switching losses in buck converters
Dual-sided cooling capability	Enables simultaneous thermal transfer from top and bottom drain surfaces, improving thermal resistance by 80% vs. conventional SO-8
Ultra-low package inductance	Minimizes voltage overshoot and ringing during hard switching, supporting stable 2 MHz operation
Optimized for Sync FET socket	Combines low R_DS(on), low Q_g, and fast diode recovery to meet strict timing and loss targets in CPU core VRMs
RoHS-compliant & halogen-free	Meets IPC-J-STD-609A Class 1 requirements for lead-free assembly and environmental compliance

Applications

CPU Core Voltage Regulator (VRM)

High-Density Point-of-Load (POL) Converter

Use Scenario: Delivering 1–2 V @ up to 200 A to modern x86 and ARM microprocessors under dynamic load transients.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET) in multiphase buck converter, operating at 500 kHz–1.5 MHz with tight dead-time control.

Use Value: 1.4 mΩ R_DS(on) and 40 nC Q_rr reduce conduction + switching losses by ≥18% vs. prior-gen SO-8 MOSFETs, enabling higher efficiency at 90+ A/mm² board density.

Use Scenario: Compact 12 V to 3.3 V or 1.8 V conversion in telecom baseband cards and FPGA carrier boards.

IC Role / Device Role / Timing Role: High-side switch in single-phase buck regulator with ceramic output capacitors and integrated controller.

Use Value: 0.7 mm profile allows stacking with inductor and controller ICs; dual-sided cooling maintains T_J < 105°C at full load in 6 mm × 6 mm footprint.

Server Memory Subsystem Regulator

AI Accelerator Module Power Stage

Use Scenario: DDR5 memory channel VR (1.1 V @ 60 A) requiring fast transient response and low noise.

IC Role / Device Role / Timing Role: Low-side FET in 2-phase interleaved buck, leveraging low Q_gd/Q_gs2 ratio for precise duty-cycle control.

Use Value: 8.9 nC Q_gd minimizes Miller-induced shoot-through risk during phase interleaving, improving reliability under 50 A/µs dI/dt conditions.

Use Scenario: 48 V to 0.8 V conversion for GPU/AI ASICs with peak currents >300 A per rail.

IC Role / Device Role / Timing Role: Bottom-side FET in 4-phase stacked buck using DirectFET® MX for vertical current stacking.

Use Value: Dual drain terminals enable parallel PCB-layer current routing, reducing effective package inductance to <0.3 nH - critical for sub-100 ns switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET with integrated diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPbF	R_DS(on) = 2.0 mΩ @ 10 V; Q_g = 26 nC; no integrated Schottky diode	Lacks Q_rr reduction - requires external Schottky or careful dead-time tuning	Preferred when lower gate charge outweighs Q_rr benefit and layout allows discrete diode placement
SiR872DP-T1-GE3	R_DS(on) = 1.3 mΩ @ 10 V; Q_g = 42 nC; trench MOSFET with body diode only	Higher Q_rr (75 nC) and slower trr (55 ns) limit usable frequency to ≤800 kHz	Selected where absolute lowest R_DS(on) dominates, and thermal headroom permits higher switching loss

Compared with IRF6642TRPbF and SiR872DP-T1-GE3, the IRF8302MTR1PBF uniquely combines sub-1.5 mΩ on-resistance, integrated Schottky diode, and dual-sided cooling - making it the only option qualified for 1.5+ MHz CPU core VRMs with <100 µΩ effective system resistance.

Availability

IRF8302MTR1PBF is available at Aetrix Electronics and suitable for CPU core VRMs, high-density POL converters, server memory regulators, and AI accelerator module power stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF8302MTR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

The DirectFET® product line was engineered specifically for high-frequency, high-current DC-DC conversion - prioritizing thermal performance, package inductance reduction, and integration of complementary functions like Schottky diodes into power MOSFET packages.

FAQ

What is the maximum recommended gate drive voltage for IRF8302MTR1PBF?

The absolute maximum V_GS is ±20 V, but the device is characterized and optimized for 10 V drive in synchronous buck applications. Driving above 12 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and Q_g-related losses. For 3.3 V logic-level control, gate boosting or level-shifting is required due to its 1.8 V typical V_GS(th).

Can IRF8302MTR1PBF be used in high-side switch configurations?

Yes - its 30 V V_DSS and robust avalanche rating (E_AS = 1200 mJ) support high-side use in buck, boost, and half-bridge topologies. However, gate drive must provide sufficient voltage referenced to the switching node (e.g., bootstrap or isolated supply), and layout must minimize common-source inductance to preserve switching speed and prevent oscillation.

How does the integrated Schottky diode affect PCB layout versus a discrete solution?

The monolithic Schottky eliminates separate diode placement, reducing layout area by ~30% and removing two solder joints and associated parasitic inductance. It shares the same thermal path as the MOSFET die, ensuring matched temperature tracking and eliminating thermal runaway risk between discrete FET/diode pairs in high-current paths.

Is IRF8302MTR1PBF suitable for automotive ADAS power supplies?

No - while AEC-Q101 qualified variants exist (e.g., IRF8302MPbF-A), the IRF8302MTR1PBF is not automotive-qualified. It lacks PPAP documentation, extended temperature screening (-40°C to +175°C), and zero-defect manufacturing traceability required for ADAS systems. Industrial-grade use in non-safety-critical infrastructure is supported.

IRF8302MTR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Ta), 190A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 31A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6030 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 104W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF8302MTR1PBF FAQ

1.How can I place an order for IRF8302MTR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF8302MTR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF8302MTR1PBF reliable?

The price and inventory of IRF8302MTR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8302MTR1PBF is usually 5 days.

3.What payment methods are accepted for IRF8302MTR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8302MTR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF8302MTR1PBF?

IRF8302MTR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF8302MTR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF8302MTR1PBF?

For technical support, including IRF8302MTR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8302MTR1PBF requirements.

6.How does Aetrix verify that IRF8302MTR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF8302MTR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8302MTR1PBF meets industry standards.

7.What is the process for return or replacement of IRF8302MTR1PBF?

All IRF8302MTR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8302MTR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF8302MTR1PBF part is unused and in its original packaging.

Return procedure for IRF8302MTR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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