Infineon Technologies IRF8302MTRPBF

Overview

IRF8302MTRPBF from Infineon Technologies (formerly International Rectifier) is a 30V N-channel HEXFET Power MOSFET with integrated monolithic Schottky diode in DirectFET MX package, featuring 1.4 mΩ R_DS(on) @ 10 V, 35 nC total gate charge, and ultra-low 0.7 mm profile - optimized for synchronous buck converter high-side and low-side FET sockets in CPU core power delivery.

For engineers reviewing the IRF8302MTRPBF datasheet, IRF8302MTRPBF pinout, IRF8302MTRPBF application, or IRF8302MTRPBF equivalent, key selection criteria include R_DS(on) at 4.5 V (2.2 mΩ), Q_rr (40 nC), dual-sided cooling capability, and compatibility with existing SO-8 layout footprints for high-frequency DC-DC converters.

Technical Context

This MOSFET uses trench-gate silicon technology combined with copper-clip DirectFET packaging to minimize conduction and switching losses. Its integrated Schottky diode replaces the body diode to suppress reverse recovery charge (Q_rr = 40 nC), enabling efficient operation at >1 MHz switching frequencies in multiphase VRMs.

The device supports dual-sided thermal management via top-side (Drain) and bottom-side (Source/Drain pads) heat extraction, achieving R_θJC = 1.2 °C/W and R_θJ-PCB = 1.0 °C/W under validated mounting conditions - an 80% improvement over prior SO-8 MOSFETs.

Key Specifications

Pinout & Package

DirectFET MX is a top-side-drain, bottom-source/drain double-sided cooling package with no traditional leads. The device has two electrically isolated copper pads: top surface (Drain) and bottom surface (Source/Drain terminals). No discrete pins - electrical connection is made via soldered copper land patterns per IRF's MX outline drawing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency synchronous buck FET applications.

Compared with IRF6642TRPbF and SiR872DP-T1-GE3, the IRF8302MTRPBF uniquely integrates a monolithic Schottky diode to eliminate Q_rr, enabling higher efficiency at >500 kHz without compromising layout simplicity or thermal performance in space-constrained VRMs.

Availability

IRF8302MTRPBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, and AI accelerator board power stages requiring stable component supply, high-frequency switching capability, and dual-sided thermal management.

Supply support for IRF8302MTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap power devices.

The DirectFET product line was developed to overcome thermal and inductance limitations of leaded packages, targeting high-efficiency, high-density DC-DC conversion in computing and communications infrastructure.

FAQ

What is the maximum continuous drain current for IRF8302MTRPBF at 70°C ambient?

The IRF8302MTRPBF supports 26 A continuous drain current at T_A = 70°C with proper PCB copper area (1 in² Cu board, still air). This rating assumes V_GS = 10 V and is derated linearly above 70°C at 0.022 W/°C based on its 270 W P_D @ T_C = 25°C and R_θJA = 12.5 °C/W typical.

Does IRF8302MTRPBF require special soldering processes?

No - the DirectFET MX package is compatible with standard surface-mount reflow profiles including vapor phase, infrared, and convection soldering. Reflow peak temperature must not exceed 260°C for ≤30 seconds, per JEDEC J-STD-020. Application note AN-1035 provides validated stencil design and placement guidelines.

How does the integrated Schottky diode differ from the body diode in operation?

The monolithic Schottky diode conducts forward current with 0.8 V V_SD and zero reverse recovery charge (Q_rr = 40 nC), unlike the parasitic p-n body diode which exhibits 30–45 ns t_rr and 60 nC Q_rr. This eliminates reverse recovery loss and associated EMI, enabling clean zero-voltage switching transitions in synchronous rectification.

Can IRF8302MTRPBF be used in high-side switch configurations?

Yes - it is rated for V_DS = 30 V and operates reliably as a high-side FET in buck, boost, and half-bridge topologies. Gate drive must provide ≥10 V with respect to source, and layout must minimize common-source inductance to preserve switching speed and prevent oscillation during dV/dt transients.