Infineon Technologies IRF8304MTR1PBF

Overview

IRF8304MTR1PBF from Infineon Technologies is a 30 V, 28 A N-channel DirectFET® Power MOSFET optimized for synchronous buck converters in CPU core DC-DC applications. It delivers 1.7 mΩ R_DS(on) at V_GS = 10 V, 28 nC total gate charge, and ultra-low package inductance in a low-profile (<0.7 mm) MX package with dual-sided cooling capability.

For engineers reviewing the IRF8304MTR1PBF datasheet, IRF8304MTR1PBF pinout, IRF8304MTR1PBF application, or IRF8304MTR1PBF equivalent, key selection criteria include R_DS(on) at 4.5 V (2.4 mΩ), Q_g (28 nC), thermal resistance R_θJC (1.2 °C/W), body diode reverse recovery charge Q_rr (39 nC), and compatibility with 12 V bus input synchronous rectification.

Technical Context

This MOSFET employs HEXFET® silicon in a copper-clad DirectFET® MX package enabling dual-sided thermal interface-top-side to heatsink and bottom-side to PCB-reducing junction-to-case thermal resistance to 1.2 °C/W. Its gate threshold voltage (V_GS(th)) is tightly specified at 1.35–2.35 V with negative temperature coefficient (−6.1 mV/°C), supporting stable operation across −40 to +150 °C.

The device is characterized for high-frequency switching in hard-switched topologies: C_iss = 4700 pF, C_oss = 960 pF, and Cr_ss = 420 pF at V_DS = 15 V; switching times are t_d(on) = 16 ns, t_r = 22 ns, t_d(off) = 19 ns, t_f = 13 ns with R_G = 25 Ω. Body diode exhibits t_rr = 24–36 ns and Q_rr = 39–59 nC under di/dt = 260 A/µs.

Key Specifications

Pinout & Package

The IRF8304MTR1PBF uses the DirectFET® MX package: a low-profile (0.7 mm max), copper-top, double-sided cooling surface-mount module with no leads. Dimensions: 5.05 × 4.80 × 0.70 mm (L × W × H). The package integrates drain on top, source and gate on bottom, enabling simultaneous top- and bottom-side thermal management.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF8304MTR1PBF, both alternatives offer identical R_DS(on), Q_g, and thermal performance but differ only in reel quantity or minor packaging nomenclature-no electrical or mechanical redesign is needed when substituting.

Availability

IRF8304MTR1PBF is available at Aetrix Electronics and suitable for server CPU VRMs, AI accelerator power stages, and high-frequency DC-DC modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF8304MTR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The DirectFET® product line was developed to replace traditional leaded packages in high-efficiency power conversion, targeting CPU/GPU VRMs and telecom POLs where thermal density and switching speed are critical.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRF8304MTR1PBF supports 19 A continuous drain current at T_A = 70°C with standard PCB mounting (1 in² Cu), as specified in the Absolute Maximum Ratings table. This rating assumes natural convection and accounts for derating due to reduced thermal headroom above 25°C ambient.

Does this MOSFET require a gate resistor for stability in high-frequency operation?

Yes-a gate resistor (R_G) is required to dampen ringing and control dV/dt during switching. The datasheet specifies R_G = 25 Ω for switching time measurements; typical design values range from 2.2 Ω to 10 Ω depending on driver strength and layout parasitics to balance speed and EMI.

Can the IRF8304MTR1PBF be used as a control FET in a buck converter?

Yes-it is explicitly optimized for both synchronous rectifier (sync-FET) and some control FET roles. With V_GS(th) = 1.8 V and low Q_g, it supports fast turn-on using standard 5 V or 3.3 V gate drivers, though its 30 V V_DS rating limits use to ≤12 V input topologies.

How does the DirectFET® MX package improve thermal performance over SO-8?

The MX package reduces R_θJA to 12.5 °C/W (vs. ~62 °C/W for SO-8) and R_θJC to 1.2 °C/W (vs. ~3.5 °C/W) by eliminating bond wires and plastic encapsulation, using direct copper-to-copper thermal paths on both sides-enabling 80% lower thermal resistance than conventional packages.