My Inquiry
My Account
Infineon Technologies IRF8304MTRPBF
- Part No.:
- IRF8304MTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MX
- Datasheet:
-
IRF8304MTRPBF.pdf
- Description:
- IRF8304 - 12V-300V N-CHANNEL POW
- Quantity:
- Payment:
- Shipping:
Inventory:4,408
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF8304MTRPBF from Infineon Technologies is a 30 V, 28 A N-channel DirectFET® MOSFET in MX package with 1.7 mΩ RDS(on) @ 10 V, 28 nC total gate charge, and ultra-low 0.7 mm profile optimized for synchronous buck converters in CPU core power delivery.
For engineers reviewing the IRF8304MTRPBF datasheet, IRF8304MTRPBF pinout, IRF8304MTRPBF application, or IRF8304MTRPBF equivalent, this part is selected for high-frequency DC-DC conversion where low conduction loss, fast switching, dual-sided cooling, and PCB footprint compatibility with MICRO-8 layouts are critical.
Technical Context
This MOSFET uses HEXFET® silicon in a copper-clip DirectFET® MX package enabling drain-source current flow through top and bottom metal surfaces - supporting dual-sided thermal management and reducing junction-to-ambient thermal resistance to 12.5°C/W (with heatsink). Its 1.8 V gate threshold and -6.1 mV/°C temperature coefficient ensure stable turn-on across industrial temperature range.
The device is characterized for synchronous rectification in 12 V input buck converters, with optimized Qgd/Qgs2 ratio (7.9 nC / 4.2 nC) and 420 pF Crss to minimize Miller-induced shoot-through risk and support >1 MHz switching without excessive gate drive loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V max - supports 12 V bus systems with 2.5× voltage margin against transients |
| RDS(on) | 1.7 mΩ @ 10 V - enables <1 W conduction loss at 28 A continuous current |
| Qg | 28 nC typ - allows efficient 1–2 MHz switching with moderate gate driver strength (e.g., 2 A peak) |
| Qgd | 7.9 nC - limits Miller plateau duration and improves hard-switching robustness |
| RθJC | 1.2°C/W - enables high-power density layout with direct case-to-heatsink thermal path |
| Ciss | 4700 pF - impacts gate drive energy and EMI filtering requirements in high-dV/dt applications |
| VGS(th) | 1.8 V typ - ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level drivers |
Pinout & Package
DirectFET® MX package: 0.7 mm height, 5.05 × 6.35 mm footprint, top-side drain (D), bottom-side drain (D), and center-gate/source terminals - compatible with MICRO-8 PCB land patterns and vapor-phase reflow.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Metal Pad | Drain (D) | Primary high-current output path; thermally coupled to heatsink or PCB copper pour |
| Bottom Metal Pad | Drain (D) | Dual-sided cooling interface; carries full load current in parallel with top drain |
| Center Left Pad | Gate (G) | Low-inductance control terminal; requires <2 Ω gate resistor to suppress oscillation |
| Center Right Pad | Source (S) | Return path for load current; serves as local ground reference for gate drive loop |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling | Reduces RθJA by 80% vs. SO-8; enables 270 W power dissipation with clip heatsink |
| Ultra-low package inductance | Minimizes voltage overshoot during turn-off; supports clean 100 V/ns dV/dt operation |
| Optimized for sync-FET use | Low Qrr (39 nC) and fast trr (24 ns) reduce body diode conduction loss in discontinuous mode |
| RDS(on)/Qg balance | 1.7 mΩ / 28 nC ratio delivers best-in-class figure-of-merit for 30 V high-current FETs |
| RoHS & halogen-free | Complies with IPC-J-STD-609A Class 1 moisture sensitivity; MSL 1 rating |
Applications
| CPU Core Power Delivery | GPU Voltage Regulator Module (VRM) |
|---|---|
Use Scenario: Point-of-load converter supplying 0.8–1.3 V at up to 200 A to modern x86 or ARM processors. IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET) in multiphase buck topology operating at 500 kHz–1.5 MHz. Use Value: 1.7 mΩ RDS(on) and 28 nC Qg enable >95% efficiency at 100 A while maintaining thermal headroom on compact PCBs. | Use Scenario: High-current VRM powering discrete graphics processing units with dynamic load steps exceeding 100 A/µs. IC Role / Device Role / Timing Role: Low-side switch in interleaved 4–6 phase buck regulator with adaptive dead-time control. Use Value: Dual-sided cooling and 1.2°C/W RθJC prevent thermal throttling during sustained GPU boost clocks. |
| Server Memory Regulator | AI Accelerator Power Stage |
Use Scenario: DDR5 memory subsystem requiring tightly regulated 1.1 V supply with fast transient response. IC Role / Device Role / Timing Role: Sync-FET in single-phase or 2-phase buck converter synchronized to system clock for noise control. Use Value: Low Qgd/Qgs2 ratio minimizes shoot-through risk during high dv/dt transitions induced by memory channel activity. | Use Scenario: Power delivery network for edge AI inference accelerators with burst-mode workloads. IC Role / Device Role / Timing Role: High-efficiency switching element in bidirectional or multiphase buck-boost architecture. Use Value: 30 V rating and 220 A pulsed current capability support wide-input-range operation with safety margin for rail collapse events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 1.8 mΩ @ 10 V; Qg = 31 nC; TSDSON8 package (0.9 mm height) | Higher profile limits dual-sided cooling; slightly higher switching loss at 1 MHz | Preferred when legacy SO-8 layout reuse is required and thermal budget allows +0.2 mm height |
| IPB80N04S4-02 | RDS(on) = 2.0 mΩ @ 10 V; Qg = 45 nC; TO-263 package (4.8 mm height) | Single-sided cooling only; 3.5× taller; higher gate drive power needed | Chosen where existing TO-263 heatsink infrastructure exists and board height is unconstrained |
Compared with SiR872DP-T1-GE3 and IPB80N04S4-02, the IRF8304MTRPBF delivers superior thermal performance per unit volume due to its 0.7 mm DirectFET® MX package and dual-sided current path - making it uniquely suited for ultra-thin, high-density server and AI hardware where vertical space and thermal resistance are limiting factors.
Availability
IRF8304MTRPBF is available at Aetrix Electronics and suitable for CPU core power delivery, GPU VRMs, DDR5 memory regulators, and AI accelerator power stages requiring stable component supply and long-term production continuity.
Supply support for IRF8304MTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.
This part belongs to Infineon's DirectFET® power MOSFET product line, engineered specifically for high-frequency, high-current DC-DC conversion in computing and datacenter infrastructure where thermal density and switching efficiency are primary constraints.
FAQ
What is the maximum continuous drain current at 70°C ambient temperature?
The IRF8304MTRPBF supports 190 A continuous drain current at TA = 70°C when mounted on a 1 in² copper board with dual-sided cooling and proper thermal interface. This rating assumes VGS = 10 V and accounts for derating due to increased RDS(on) at elevated temperature - verified per Figure 12 in the official datasheet.
Does this MOSFET require a negative gate voltage for safe turn-off in high-dv/dt environments?
No. The IRF8304MTRPBF has a gate threshold voltage of 1.8 V (typical) and is fully enhanced at 0 V gate-source bias. A negative gate voltage is not required; however, a gate resistor ≤25 Ω and local gate-source capacitor (≥10 nF) are recommended to suppress ringing during fast switching in high-noise power stages.
Can the top and bottom drain pads be used simultaneously for current sharing?
Yes - both top and bottom metal pads are electrically connected to the same internal drain node and designed for simultaneous conduction. The datasheet specifies dual-sided cooling capability and confirms identical RDS(on) contribution from both paths, enabling true parallel current distribution and halving effective thermal resistance compared to single-sided packages.
Is the IRF8304MTRPBF suitable for avalanche-rated operation?
Yes - it is rated for 800 mJ single-pulse avalanche energy (EAS) at IAS = 22 A, as shown in Figure 14. This capability supports unclamped inductive switching in synchronous rectifier applications where body diode commutation may occur, provided layout minimizes stray inductance and gate drive remains active during recovery.
IRF8304MTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MX
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Ta), 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.2mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4700 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 100W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DirectFET™ Isometric MX
IRF8304MTRPBF FAQ
1.How can I place an order for IRF8304MTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF8304MTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF8304MTRPBF reliable?
The price and inventory of IRF8304MTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8304MTRPBF is usually 5 days.
3.What payment methods are accepted for IRF8304MTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8304MTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF8304MTRPBF?
IRF8304MTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF8304MTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF8304MTRPBF?
For technical support, including IRF8304MTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8304MTRPBF requirements.
6.How does Aetrix verify that IRF8304MTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF8304MTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8304MTRPBF meets industry standards.
7.What is the process for return or replacement of IRF8304MTRPBF?
All IRF8304MTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8304MTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF8304MTRPBF part is unused and in its original packaging.
Return procedure for IRF8304MTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF8304MTRPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
