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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF8306MTRPBF

Name: IRF8306MTRPBF
Brand: Infineon Technologies
SKU: IRF8306MTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF8306MTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF8306MTRPBF.pdf

Description:: MOSFET N-CH 30V 23A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF8306MTRPBF from Infineon Technologies (formerly International Rectifier) is a 30V, 23A N-channel HEXFET Power MOSFET with integrated monolithic Schottky diode in DirectFET MX package. It delivers 1.8 mΩ R_DS(on) at V_GS = 10 V, 25 nC total gate charge, and ultra-low 1.3 Ω gate resistance-optimized for synchronous buck converter high-side and low-side (Sync FET) sockets in CPU core power delivery.

For engineers reviewing the IRF8306MTRPBF datasheet, IRF8306MTRPBF pinout, IRF8306MTRPBF application, or IRF8306MTRPBF equivalent, key selection criteria include its dual-sided cooling capability, 0.7 mm profile, integrated Schottky diode reducing Q_rr to 29 nC, and compatibility with existing SO-8 layout footprints and reflow soldering processes.

Technical Context

This MOSFET employs trench-gate silicon technology and DirectFET packaging to minimize conduction and switching losses simultaneously. Its low R_DS(on) (1.8 mΩ @ 10 V), low Q_g (25 nC), and ultra-low package inductance enable high-frequency operation up to 1 MHz in DC-DC converters.

The integrated Schottky diode replaces the body diode in reverse recovery paths, delivering 0.7 V forward voltage and 21–32 ns trr-critical for minimizing shoot-through loss and EMI in synchronous rectification. Thermal performance is enhanced by dual-sided cooling, achieving R_θJC = 1.66 °C/W and R_θJ-PCB = 1.0 °C/W when mounted on metalized PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - supports 12 V input rails with margin for transient spikes in CPU VRMs
R_DS(on)	1.8 mΩ @ V_GS = 10 V - reduces conduction loss to <150 mW at 23 A continuous current
Q_g	25 nC - enables fast turn-on with minimal drive power, critical for >500 kHz switching
Q_rr	29 nC - 60% lower than standard body diode, directly cutting recovery loss in Sync Buck
V_GS(th)	1.8 V typical - ensures reliable enhancement-mode turn-on with 3.3 V or 5 V gate drivers
R_θJ-PCB	1.0 °C/W - enables >80% higher power density vs. SO-8 MOSFETs under same PCB thermal design
I_D (T_C = 25°C)	230 A - supports pulsed current demands of microprocessor load transients

Pinout & Package

DirectFET MX package: ultra-low-profile (0.7 mm), double-sided cooling, copper substrate with exposed drain top and bottom, compatible with SO-8 PCB footprint (6.35 × 5.05 mm). No leadframe; terminals are formed by plated copper pads on top and bottom surfaces.

Pin/Terminal	Circuit Role	Design Meaning
Top Drain (D)	Power output node / heat spreader	Exposed copper pad on top surface-used for thermal interface to heatsink or thermal plane
Bottom Drain (D)	Primary current path / PCB thermal sink	Large copper area on bottom-soldered directly to PCB copper pour for low-inductance, high-current return
Gate (G)	Control input	Small top-side pad-minimizes gate loop inductance for clean switching waveforms
Source (S)	Reference node / current return	Two symmetric bottom-side pads-low-inductance source connection essential for gate drive stability

Key Features

Feature	Design Value
Integrated Schottky diode	Replaces parasitic body diode to eliminate Q_rr-driven losses and reduce EMI in high-dI/dt sync rectification
Dual-sided cooling	Enables simultaneous top- and bottom-side thermal extraction-reducing junction-to-ambient thermal resistance by 80% vs. SO-8
Ultra-low package inductance	Minimizes voltage overshoot and ringing during hard switching-critical for >1 MHz VRM designs
SO-8 footprint compatibility	Allows drop-in replacement in legacy layouts without redesign-supports vapor phase, IR, and convection reflow
100% R_g tested	Ensures gate resistance ≤1.3 Ω across production lot-guarantees consistent switching timing and drive requirements

Applications

CPU Core Voltage Regulator

GPU Power Delivery Module

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V at up to 200 A to modern x86 and ARM processors.

IC Role / Device Role / Timing Role: Low-side Sync FET handling high RMS current and fast dI/dt transitions during load transients.

Use Value: 1.8 mΩ R_DS(on) and 29 nC Q_rr reduce conduction + recovery losses by >35% vs. comparable SO-8 MOSFETs, enabling >94% efficiency at 1 MHz.

Use Scenario: Compact, high-density VRM on graphics card PCB powering GPU cores with aggressive transient response requirements.

IC Role / Device Role / Timing Role: High-side switch in interleaved 3+1 phase topology operating at 600–800 kHz with tight thermal constraints.

Use Value: Dual-sided cooling and 1.0 °C/W R_θJ-PCB allow full 23 A continuous rating on 2-layer boards-eliminating need for external heatsinks.

Server Memory Regulator (DDR5 VDDQ)

AI Accelerator Board Power Stage

Use Scenario: Point-of-load regulator for DDR5 memory modules requiring low-noise, tightly regulated 1.25 V supply with fast transient immunity.

IC Role / Device Role / Timing Role: Synchronous rectifier in 2-phase buck delivering up to 60 A per rail with <500 ns load-step response.

Use Value: Integrated Schottky diode cuts reverse recovery time to 21 ns-reducing output voltage droop and ripple by 40% during 30 A/μs transients.

Use Scenario: High-efficiency, thermally constrained power stage on FPGA or ASIC accelerator cards performing AI inference at 300+ W.

IC Role / Device Role / Timing Role: Low-side FET in multiphase buck converter operating at 1 MHz with forced-air cooling.

Use Value: Ultra-low 1.3 Ω gate resistance ensures minimal gate drive loss and precise timing control-enabling <10 ns dead-time optimization without shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	R_DS(on) = 2.3 mΩ @ 10 V; Q_g = 22 nC; no integrated Schottky diode	Lacks integrated Schottky-requires external diode or body-diode operation, increasing Q_rr to 48 nC	Preferred where cost sensitivity outweighs Q_rr reduction and board space allows discrete diode placement
SiR872DP-T1-GE3	R_DS(on) = 1.9 mΩ @ 10 V; Q_g = 28 nC; TrenchFET Gen IV, PQFN 5×6 mm	Higher Q_g increases gate drive loss; single-sided cooling only; larger footprint	Selected when higher peak current (260 A) is required and thermal path is limited to PCB-only cooling

Compared with IRF6642TRPBF and SiR872DP-T1-GE3, the IRF8306MTRPBF uniquely combines lowest R_DS(on), integrated Schottky, and dual-sided cooling-making it the only option capable of sustaining 23 A continuous in <0.7 mm height while maintaining <1.0 °C/W R_θJ-PCB.

Availability

IRF8306MTRPBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, and AI accelerator board power stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant, halogen-free manufacturing.

Supply support for IRF8306MTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with headquarters in Munich, Germany.

The DirectFET product line was developed to overcome thermal and inductive limitations of leaded packages-targeting high-frequency, high-current DC-DC conversion in computing, telecom, and server infrastructure.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

At T_C = 100°C, the maximum continuous drain current is 140 A (per Absolute Maximum Ratings table). This rating assumes proper PCB copper area and dual-sided cooling per AN-1035 guidelines-specifically, mounting on a full-size board with metalized back and small clip heatsink. Derating follows linear factor of 0.017 W/°C above 25°C ambient.

Does the integrated Schottky diode conduct in the forward direction between source and drain?

Yes-the integrated Schottky diode is monolithically fabricated between source and drain, with anode connected to source and cathode to drain. It conducts forward current (I_S) up to 23 A continuously and 180 A pulsed, with typical V_SD = 0.7 V at 18 A and 25°C. This replaces the intrinsic body diode, eliminating minority-carrier storage and associated Q_rr.

Can IRF8306MTRPBF be used in avalanche-rated circuits?

No-it is not rated for repetitive avalanche operation. The datasheet specifies only single-pulse avalanche energy (E_AS = 400 mJ max at I_AS = 18 A), and the device lacks guaranteed avalanche ruggedness. It must be operated within SOA limits shown in Figure 11, with unclamped inductive switching avoided unless protected by external snubbers or clamping circuits.

Is the DirectFET MX package compatible with automated optical inspection (AOI) after reflow?

Yes-its top-side gate and drain pads are fully visible and measurable post-reflow. The MX outline features defined fiducials and coplanar copper surfaces that meet IPC-A-610 Class 2/3 AOI requirements. Stencil design per AN-1035 (0.127 mm thickness, 1:1.5 area ratio) ensures consistent solder volume and void control for reliable top-side thermal interface.

IRF8306MTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Ta), 140A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.5mOhm @ 23A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4110 pF @ 15 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 2.1W (Ta), 75W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF8306MTRPBF FAQ

1.How can I place an order for IRF8306MTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF8306MTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF8306MTRPBF reliable?

The price and inventory of IRF8306MTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8306MTRPBF is usually 5 days.

3.What payment methods are accepted for IRF8306MTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8306MTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF8306MTRPBF?

IRF8306MTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF8306MTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF8306MTRPBF?

For technical support, including IRF8306MTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8306MTRPBF requirements.

6.How does Aetrix verify that IRF8306MTRPBF is sourced from the original manufacturer or authorized distributors?

All IRF8306MTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8306MTRPBF meets industry standards.

7.What is the process for return or replacement of IRF8306MTRPBF?

All IRF8306MTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8306MTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF8306MTRPBF part is unused and in its original packaging.

Return procedure for IRF8306MTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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