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Infineon Technologies IRF8327STR1PBF
- Part No.:
- IRF8327STR1PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric SQ
- Datasheet:
-
IRF8327STR1PBF.pdf
- Description:
- MOSFET N-CH 30V 14A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:9,456
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Product details
Overview
IRF8327STR1PBF from Infineon Technologies is a 30 V, 14 A N-channel DirectFET® Power MOSFET optimized for control-FET operation in high-frequency synchronous buck converters from 12 V input rails. It delivers 5.1 mΩ RDS(on) at VGS = 10 V, 9.2 nC total gate charge, and ultra-low 0.7 mm profile for dual-sided cooling-enabling high-efficiency CPU core DC-DC conversion in server and AI accelerator power stages.
For engineers reviewing the IRF8327STR1PBF datasheet, IRF8327STR1PBF pinout, IRF8327STR1PBF application, or IRF8327STR1PBF equivalent, key selection criteria include low RDS(on) at 4.5 V (8.5 mΩ), minimized Qgd/Qg ratio (3.0/9.2 nC), ultra-low package inductance, thermal resistance RθJC = 3.0 °C/W, and compatibility with vapor-phase reflow per AN-1035.
Technical Context
This MOSFET employs HEXFET® silicon in a DirectFET® SQ package with top-side drain and bottom-side source/gate terminals-enabling simultaneous PCB-side and heatsink-side thermal extraction. Its gate threshold voltage (1.9 V typ) and steep transconductance (25 S) support robust 4.5 V logic-level drive in high-dV/dt synchronous rectification.
The device is characterized for unclamped inductive switching (EAS = 250 mJ at IAS = 11 A) and features a fast body diode (trr = 17 ns, Qrr = 19 nC) with low VSD (0.80 V typ), reducing shoot-through risk and reverse-recovery losses in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V max - supports 12 V bus designs with 2.5× voltage margin against transient spikes |
| RDS(on) | 5.1 mΩ @ 10 V - enables <1 W conduction loss at 14 A continuous drain current |
| Qg | 9.2 nC typ - reduces gate drive power and allows use of low-current drivers in high-frequency (>1 MHz) operation |
| Qgd | 3.0 nC typ - limits Miller-induced turn-off delay and improves noise immunity during dV/dt transitions |
| RθJC | 3.0 °C/W - enables >60 W power dissipation with 180 °C junction-to-case ΔT under dual-sided cooling |
| tr/tf | 8.9 / 5.3 ns - supports clean edge rates in sub-100 ns switching windows without excessive EMI |
| VGS(th) | 1.9 V typ - ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic controllers |
Pinout & Package
DirectFET® SQ package: 0.7 mm height, footprint compatible with MICRO-8 layout; top-side drain (D), bottom-side source (S) and gate (G) terminals enable dual-sided thermal interface and minimal parasitic inductance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top metal pad | Drain (D) | Primary high-side current path and primary thermal interface to heatsink or copper plane |
| Bottom left pad | Source (S) | Low-impedance return path for load current and reference node for gate drive |
| Bottom right pad | Gate (G) | Control terminal with low-inductance connection to driver IC; isolated from drain by dielectric layer |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling capability | Reduces effective RθJA by 80% vs. conventional SO-8, enabling >2× power density in constrained board space |
| Ultra-low package inductance | Minimizes VDS overshoot and gate ringing during hard switching, easing EMI filter design |
| Optimized for 4.5 V drive | 8.5 mΩ RDS(on) at VGS = 4.5 V ensures low conduction loss with standard PWM controller outputs |
| Fast body diode recovery | 17 ns trr and 19 nC Qrr reduce cross-conduction losses and voltage stress in synchronous buck freewheeling |
| RoHS-compliant & halogen-free | Meets IPC-J-STD-609A Class 1 requirements for lead-free assembly and environmental compliance |
Applications
| CPU Core Voltage Regulator (VRM) | AI Accelerator Power Stage |
|---|---|
|
Use Scenario: High-current, high-frequency (500 kHz–2 MHz) 3-phase buck converter supplying 0.8–1.2 V to multi-core Xeon or AMD EPYC processors. IC Role / Device Role / Timing Role: Control FET switching node; handles full input voltage swing with precise timing synchronized to gate driver's dead-time control. Use Value: 5.1 mΩ RDS(on) and 9.2 nC Qg jointly reduce total loss to <1.2 W at 14 A, enabling >94% efficiency at 12 V input. |
Use Scenario: Dual-phase 12 V input buck delivering up to 400 A to GPU or TPU modules in datacenter accelerators. IC Role / Device Role / Timing Role: High-side switch in interleaved topology; operates with <10 ns propagation skew across phases for ripple cancellation. Use Value: 0.7 mm profile allows stacked heatsink integration; dual-sided cooling sustains 60 W dissipation without derating at 85 °C ambient. |
| Server Memory Regulator (DDR5 VDDQ) | High-Density Telecom POL Converter |
|
Use Scenario: Compact 12 V → 1.25 V single-phase buck supplying DDR5 memory modules with tight transient response. IC Role / Device Role / Timing Role: Primary switching element; driven by integrated controller with adaptive gate voltage scaling. Use Value: 1.9 V VGS(th) ensures stable turn-on at 3.3 V logic levels; low Qgd prevents false triggering during fast dV/dt events. |
Use Scenario: 48 V → 3.3 V intermediate bus converter in 1RU telecom equipment with strict height constraints (<8 mm). IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward or LLC topology. Use Value: 0.7 mm height fits within mechanical envelope; 3.0 °C/W RθJC enables direct mounting to aluminum chassis for passive cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar control-FET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF8314TRPbF | Higher RDS(on) (6.2 mΩ @ 10 V), same Qg (9.2 nC), taller package (0.9 mm) | Lower power density; requires larger thermal pad area for equivalent power handling | Select when legacy MICRO-8 layout reuse is required and 15% higher conduction loss is acceptable |
| SiR872DP-T1-GE3 | Lower RDS(on) (4.0 mΩ @ 10 V), higher Qg (13.5 nC), same DirectFET® SQ footprint | Higher gate drive loss at >1 MHz; better for lower-frequency, higher-current VRMs | Select when minimizing conduction loss dominates over switching loss and gate drive capability permits higher Qg |
Compared with IRF8327STR1PBF, IRF8314TRPbF trades thermal performance for layout compatibility, while SiR872DP-T1-GE3 prioritizes RDS(on) over gate charge-making IRF8327STR1PBF optimal for balanced high-frequency CPU VRM designs where both conduction and switching losses must be minimized simultaneously.
Availability
IRF8327STR1PBF is available at Aetrix Electronics and suitable for CPU core VRMs, AI accelerator power stages, DDR5 memory regulators, and high-density telecom POL converters requiring stable component supply and long-term lifecycle assurance.
Supply support for IRF8327STR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with over 30 years of MOSFET innovation and manufacturing excellence.
The DirectFET® product line was developed to eliminate packaging limitations in high-power-density DC-DC conversion-specifically targeting server, AI, and telecom applications where thermal resistance, switching speed, and board space are critical constraints.
FAQ
What is the maximum continuous drain current at 70°C ambient temperature?
The IRF8327STR1PBF supports 62 A continuous drain current at TA = 70°C when mounted on a 1 in² copper board with double-sided cooling and proper thermal interface. This rating assumes VGS = 10 V, no forced airflow, and steady-state conditions per the Absolute Maximum Ratings table. Derating begins above 70°C at 0.017 W/°C.
Is the IRF8327STR1PBF suitable for 4.5 V gate drive in synchronous buck topologies?
Yes-the device specifies 8.5 mΩ RDS(on) at VGS = 4.5 V and 14 A, with a typical gate threshold voltage of 1.9 V. Its steep transfer characteristic (25 S transconductance) ensures full enhancement and low dynamic losses under 4.5 V logic-level drive, making it ideal for controllers without dedicated gate boost circuits.
How does the DirectFET® SQ package improve thermal performance versus SO-8?
The DirectFET® SQ package reduces junction-to-ambient thermal resistance by 80% versus SO-8 through dual-sided cooling: the top drain pad interfaces directly with a heatsink or thermal plate, while the bottom source/gate pads conduct heat into the PCB. Measured RθJA is 12.5 °C/W (vs. ~60 °C/W for SO-8) under identical 1 in² Cu board conditions.
Does the IRF8327STR1PBF have avalanche energy rating, and what is its value?
Yes-the device is rated for unclamped inductive switching with EAS = 250 mJ at IAS = 11 A and starting TJ = 25°C. This rating is validated per JEDEC JESD24-11 and supports robust operation during transient overloads or short-circuit events in well-designed synchronous buck stages.
IRF8327STR1PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- DirectFET™ Isometric SQ
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.3mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1430 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.2W (Ta), 42W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ SQ
IRF8327STR1PBF FAQ
1.How can I place an order for IRF8327STR1PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF8327STR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF8327STR1PBF reliable?
The price and inventory of IRF8327STR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8327STR1PBF is usually 5 days.
3.What payment methods are accepted for IRF8327STR1PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8327STR1PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF8327STR1PBF?
IRF8327STR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF8327STR1PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF8327STR1PBF?
For technical support, including IRF8327STR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8327STR1PBF requirements.
6.How does Aetrix verify that IRF8327STR1PBF is sourced from the original manufacturer or authorized distributors?
All IRF8327STR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8327STR1PBF meets industry standards.
7.What is the process for return or replacement of IRF8327STR1PBF?
All IRF8327STR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8327STR1PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF8327STR1PBF part is unused and in its original packaging.
Return procedure for IRF8327STR1PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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