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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF8707GPBF

Name: IRF8707GPBF
Brand: Infineon Technologies
SKU: IRF8707GPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF8707GPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF8707GPBF.pdf

Description:: MOSFET N-CH 30V 11A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF8707GPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for synchronous buck converter top-side switching with 30 V V_DS, 11.9 mΩ R_DS(on) at V_GS = 10 V, 6.2 nC total gate charge, and 8.8 A continuous drain current at T_A = 25°C. It serves as the high-side control MOSFET in notebook CPU VRMs and isolated DC-DC converters for networking equipment.

For engineers reviewing the IRF8707GPBF datasheet, IRF8707GPBF pinout, IRF8707GPBF application, or IRF8707GPBF equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, ultra-low gate charge for reduced switching loss, fully characterized avalanche rating, lead-free/halogen-free compliance, and SO-8 thermal performance under high-frequency PWM operation.

Technical Context

This MOSFET employs trench-gated HEXFET silicon optimized for high-efficiency, high-frequency DC-DC conversion. Its gate threshold voltage (1.35–2.35 V) enables robust turn-on with 4.5 V logic-level drive, while its 2.2 Ω typical gate resistance and 82 pF Crss support fast, controlled switching with minimal ringing.

The device integrates a co-packaged body diode with 12–18 ns reverse recovery time and 13–20 nC Q_rr, enabling reliable operation in synchronous rectification and unclamped inductive switching. Thermal design is supported by R_θJA = 50 °C/W and R_θJL = 20 °C/W for PCB-mounted SO-8 layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V input rail applications with margin
R_DS(on) max	11.9 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 8.8 A in high-current VRM phases
Q_g	6.2 nC - Reduces gate drive power and enables >1 MHz switching without excessive driver stress
I_D cont @ 25°C	8.8 A - Supports multi-phase CPU core power delivery up to ~70 W per phase
E_AS	53 mJ - Rated single-pulse avalanche energy ensures reliability during load dump or startup faults
V_GS max	±20 V - Allows safe gate overdrive for faster turn-on while preventing oxide damage
Q_rr	13–20 nC - Low reverse recovery charge minimizes shoot-through risk in sync-buck dead-time management

Pinout & Package

IRF8707GPBF is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal dissipation. Pin 1 is Gate (G), Pins 2–4 and 6–8 are Drain (D), Pin 5 is Source (S). The package supports JEDEC MS-012AC footprint and is compatible with automated reflow assembly.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; accepts 2.5–20 V drive; low 2.2 Ω R_g enables fast edge rates
2, 3, 4, 6, 7, 8	Drain (D)	High-side switch node; all six pins internally connected to die drain metallization and exposed pad
5	Source (S)	Reference node for gate drive and current sensing; tied to power ground in sync-buck high-side configuration

Key Features

Feature	Design Value
Ultra-low Q_g	6.2 nC total gate charge reduces driver power loss and improves efficiency above 500 kHz
Low R_DS(on) @ 4.5 V	14.2 mΩ typical - ensures stable on-resistance with standard logic-level gate drivers
Fully tested R_g	2.2–3.7 Ω - enables predictable switching timing without external gate resistors in many designs
100% avalanche tested	Each unit validated for E_AS = 53 mJ - eliminates need for system-level derating in transient-prone supplies
Lead-free & halogen-free	Complies with RoHS 2011/65/EU and JEDEC J-STD-020 - suitable for consumer and networking end-equipment

Applications

Notebook CPU Voltage Regulator Modules

Isolated Telecom DC-DC Converters

Use Scenario: High-current, high-frequency step-down regulation for Intel/AMD mobile processors requiring dynamic load response and tight voltage accuracy.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in multiphase buck converter; switches at 300–1000 kHz with precise dead-time control.

Use Value: 11.9 mΩ R_DS(on) and 6.2 nC Q_g jointly reduce combined conduction + switching losses below 1.2 W per phase at 8.8 A.

Use Scenario: Primary-side active clamp or secondary-side synchronous rectifier in 48 V–12 V isolated converters for routers and switches.

IC Role / Device Role / Timing Role: Top-side switch in forward or active-clamp forward topology; handles repetitive unclamped inductive energy.

Use Value: 53 mJ E_AS rating and 100% avalanche testing ensure robustness against transformer leakage spikes and line transients.

USB-C PD Power Delivery Modules

Industrial PLC I/O Power Switching

Use Scenario: Compact 20–30 V input, 5–20 V output programmable power supply supporting USB Power Delivery negotiation and variable output.

IC Role / Device Role / Timing Role: High-side control FET in buck controller-based PD sink/supply; driven by integrated gate driver with 4.5 V logic compatibility.

Use Value: 14.2 mΩ R_DS(on) at V_GS = 4.5 V enables efficient operation without level-shifting, reducing BOM count.

Use Scenario: 24 V DC field power distribution with overcurrent and short-circuit protection for digital I/O modules.

IC Role / Device Role / Timing Role: Load switch with integrated current limiting and thermal shutdown; used in hot-swap and fault-tolerant power rails.

Use Value: Body diode V_SD ≤ 1.0 V and 12–18 ns t_rr allow bidirectional current handling and fast fault clearing in back-to-back configurations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 9.0 mΩ @ 10 V; Q_g = 10.5 nC; SO-8 with thermally enhanced pad	Higher gate charge increases driver loss above 500 kHz; better thermal R_θJA (40 °C/W)	Preferred for thermally constrained 2-layer PCBs where switching frequency ≤300 kHz
DMN3025LSD-13	R_DS(on) = 2.5 mΩ @ 10 V; Q_g = 12.5 nC; dual N-channel in SO-8	Lower R_DS(on) but higher Q_g; requires dual-drive layout; no avalanche rating published	Suitable for cost-sensitive, lower-power sync-buck where avalanche immunity is not required

Compared with Si7852DP-T1-GE3 and DMN3025LSD-13, IRF8707GPBF offers the best balance of low Q_g, verified avalanche capability, and proven performance in high-frequency notebook VRMs-making it optimal when switching loss and fault robustness are prioritized over absolute R_DS(on) minimum.

Availability

IRF8707GPBF is available at Aetrix Electronics and suitable for notebook CPU VRMs, telecom DC-DC converters, and USB-C PD power modules requiring stable component supply, long-lifecycle availability, and RoHS-compliant sourcing.

Supply support for IRF8707GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF8707GPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in portable computing and communications infrastructure.

FAQ

What is the maximum recommended gate drive voltage for IRF8707GPBF?

The absolute maximum gate-to-source voltage is ±20 V, but the device is fully characterized and optimized for 4.5–10 V drive. Driving above 12 V provides diminishing returns in R_DS(on) reduction while increasing gate oxide stress and ESD risk. For most sync-buck applications, 5 V or 8 V logic-level drivers deliver optimal trade-off between on-resistance and reliability.

Does IRF8707GPBF have a specified body diode reverse recovery time?

Yes - the datasheet specifies t_rr = 12–18 ns and Q_rr = 13–20 nC under conditions of I_S = 8.8 A, V_DD = 15 V, and di/dt = 300 A/µs. This fast recovery supports synchronous rectification without significant shoot-through current in properly timed gate drive schemes.

Can IRF8707GPBF be used in linear mode (as a pass transistor)?

No - it is not rated or characterized for linear (saturation) operation. The Safe Operating Area (SOA) curve shows operation is limited to pulse widths ≤100 µs at high V_DS/I_D combinations. Continuous linear use risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient SOA margin.

Is the SO-8 package of IRF8707GPBF thermally enhanced?

The SO-8 package features an exposed drain pad that serves as the primary thermal path to the PCB. While not a dedicated thermally enhanced variant (e.g., PowerSO-8), its R_θJL = 20 °C/W and R_θJA = 50 °C/W assume adequate copper pour and via stitching beneath the drain pads - achieving these values requires ≥1 in² 2-oz copper with ≥6 thermal vias.

IRF8707GPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11.9mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 9.3 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 760 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF8707GPBF FAQ

1.How can I place an order for IRF8707GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF8707GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF8707GPBF reliable?

The price and inventory of IRF8707GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8707GPBF is usually 5 days.

3.What payment methods are accepted for IRF8707GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8707GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF8707GPBF?

IRF8707GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF8707GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF8707GPBF?

For technical support, including IRF8707GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8707GPBF requirements.

6.How does Aetrix verify that IRF8707GPBF is sourced from the original manufacturer or authorized distributors?

All IRF8707GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8707GPBF meets industry standards.

7.What is the process for return or replacement of IRF8707GPBF?

All IRF8707GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8707GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF8707GPBF part is unused and in its original packaging.

Return procedure for IRF8707GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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