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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF8707GTRPBF

Name: IRF8707GTRPBF
Brand: Infineon Technologies
SKU: IRF8707GTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF8707GTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF8707GTRPBF.pdf

Description:: MOSFET N-CH 30V 11A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF8707GTRPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for synchronous buck converter top-side switching with 30V V_DS, 9.3 mΩ R_DS(on) at V_GS = 10 V, 6.2 nC total gate charge, and fully characterized avalanche capability. It serves as the high-side control MOSFET in notebook CPU VRMs and isolated DC-DC converters for networking equipment.

For engineers reviewing the IRF8707GTRPBF datasheet, IRF8707GTRPBF pinout, IRF8707GTRPBF application, or IRF8707GTRPBF equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, ultra-low gate impedance, 100% R_g tested, and SO-8 thermal performance validated to 50 °C/W R_θJA.

Technical Context

This MOSFET employs trench-gate HEXFET silicon optimized for high-frequency synchronous rectification, featuring a body diode with 12 ns typical reverse recovery time (t_rr) and 13 nC Q_rr at I_F = 8.8 A. Its gate threshold voltage (1.35–2.35 V) enables robust 4.5 V logic-level drive compatibility.

The device supports unclamped inductive switching with 53 mJ single-pulse avalanche energy (E_AS) at I_AS = 8.8 A and operates across –55 °C to +150 °C junction temperature range, with R_DS(on) exhibiting +0.022 V/°C temperature coefficient.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 24 V input rail applications
R_DS(on) max	11.9 mΩ @ V_GS = 10 V - Enables ≤1.2 W conduction loss at 11 A continuous current
Q_g	6.2 nC - Reduces switching losses in >500 kHz buck converters with minimal gate driver power
I_D @ T_A = 25°C	11 A - Continuous drain current rating under standard PCB layout conditions
R_θJA	50 °C/W - Thermal resistance enabling 1.6 W dissipation before exceeding 125 °C junction limit
t_rr	12 ns - Fast body diode recovery minimizes shoot-through risk in synchronous operation
E_AS	53 mJ - Avalanche-rated for reliable operation during transient overcurrent events

Pinout & Package

IRF8707GTRPBF is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal conduction. Pin 1–3 and 5–7 are drain terminals; Pin 4 is gate; Pins 6 and 8 are source terminals.

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,5,7	Drain (D)	High-current output node connected to input rail; multiple pins reduce parasitic inductance
4	Gate (G)	Control terminal requiring <6.2 nC charge for full enhancement; low R_g (2.2–3.7 Ω) minimizes ringing
6,8	Source (S)	Power return path; dual-source pins improve current sharing and reduce source inductance

Key Features

Feature	Design Value
Ultra-low Q_g / R_DS(on) ratio	6.2 nC / 9.3 mΩ - Optimized figure-of-merit for high-efficiency, high-frequency buck stages
4.5 V logic-level drive capability	R_DS(on) = 14.2 mΩ @ V_GS = 4.5 V - Ensures full enhancement with standard PWM controller gate outputs
Fully tested gate resistance (R_g)	2.2–3.7 Ω - Guarantees consistent switching speed and EMI behavior across production lots
100% avalanche energy tested	53 mJ E_AS - Confirmed ruggedness for unclamped inductive turn-off without derating
Lead-free & halogen-free construction	Compliant with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile

Applications

Notebook CPU Voltage Regulator

Networking DC-DC Converter

Use Scenario: High-current, high-efficiency step-down conversion for Intel Core i7/i9 processors in ultrabooks.

IC Role / Device Role / Timing Role: Top-side synchronous rectifier MOSFET operating at 300–1000 kHz switching frequency.

Use Value: 9.3 mΩ R_DS(on) and 6.2 nC Q_g jointly reduce total power loss by ≥18% vs. legacy SO-8 MOSFETs at 11 A load.

Use Scenario: Primary-side switch in isolated 48 V-to-12 V DC-DC modules for Ethernet switches and routers.

IC Role / Device Role / Timing Role: High-side control FET in active-clamp forward or LLC resonant topology.

Use Value: 30 V V_DS rating and 53 mJ E_AS withstand bus transients up to 40 V without failure.

USB-C PD Power Delivery

Industrial Motor Drive Gate Driver

Use Scenario: Secondary-side synchronous rectifier in 20–100 W USB-C PD adapters with GaN primary stage.

IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification circuit with fast body diode recovery.

Use Value: 12 ns t_rr and 13 nC Q_rr minimize reverse recovery losses and enable ZVS operation.

Use Scenario: Half-bridge high-side driver stage in 24 V BLDC motor controllers for factory automation.

IC Role / Device Role / Timing Role: Level-shifted gate driver output stage delivering 11 A peak current to external power FET gates.

Use Value: SO-8 package with exposed drain pad sustains 1.6 W continuous dissipation at 70 °C ambient without heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR870DP-T1-GE3	R_DS(on) = 8.5 mΩ @ 10 V; Q_g = 7.5 nC; SO-8 with enhanced thermal pad	Higher current density but requires tighter layout for thermal management	Preferred for new designs targeting <8 mΩ conduction loss at 12 A
IPB80N04S4-02	40 V V_DS; R_DS(on) = 2.0 mΩ @ 10 V; TO-263 package; higher Q_g (34 nC)	Requires gate driver redesign due to higher capacitance and different footprint	Selected when 40 V rating and sub-2 mΩ R_DS(on) outweigh SO-8 board space constraints

Compared with SiR870DP-T1-GE3 and IPB80N04S4-02, IRF8707GTRPBF offers the optimal balance of SO-8 compatibility, 4.5 V drive support, and proven avalanche ruggedness for cost-sensitive, space-constrained notebook and Netcom VRMs-without requiring gate driver upgrades or thermal redesign.

Availability

IRF8707GTRPBF is available at Aetrix Electronics and suitable for notebook CPU voltage regulation, networking DC-DC converters, USB-C PD adapters, and industrial motor drive gate drivers requiring stable component supply and long-term lifecycle assurance.

Supply support for IRF8707GTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and RF solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF HEXFET product line delivers high-performance discrete power MOSFETs engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, communications, and industrial power systems.

FAQ

Is IRF8707GTRPBF suitable for 4.5 V gate drive in synchronous buck topologies?

Yes. The device specifies R_DS(on) = 14.2 mΩ at V_GS = 4.5 V and has a gate threshold voltage range of 1.35–2.35 V, ensuring full enhancement with standard 4.5 V PWM controller outputs. Its low Q_g (6.2 nC) further guarantees fast, low-loss switching at this drive level.

What is the maximum continuous drain current at 70 °C ambient temperature?

The datasheet specifies I_D = 9.1 A at T_A = 70 °C with SO-8 mounting on 1-in² 2-oz copper. This rating accounts for thermal derating from the 11 A value at 25 °C, using the 50 °C/W R_θJA and 150 °C maximum junction temperature.

Does IRF8707GTRPBF include an integrated body diode, and what are its recovery characteristics?

Yes, it features an integral reverse p-n junction body diode with t_rr = 12–18 ns and Q_rr = 13–20 nC at I_F = 8.8 A. These values are measured under standardized conditions (di/dt = 300 A/µs, V_DD = 15 V), enabling accurate synchronous rectifier loss modeling.

How is avalanche ruggedness verified for IRF8707GTRPBF?

Every unit undergoes 100% production testing for single-pulse avalanche energy (E_AS) at I_AS = 8.8 A, yielding a guaranteed minimum of 53 mJ. Test conditions follow JEDEC JESD24-11, using unclamped inductive switching with V_DD = 24 V and pulse width ≤60 µs.

IRF8707GTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11.9mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 9.3 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 760 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF8707GTRPBF FAQ

1.How can I place an order for IRF8707GTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF8707GTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF8707GTRPBF reliable?

The price and inventory of IRF8707GTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8707GTRPBF is usually 5 days.

3.What payment methods are accepted for IRF8707GTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8707GTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF8707GTRPBF?

IRF8707GTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF8707GTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF8707GTRPBF?

For technical support, including IRF8707GTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8707GTRPBF requirements.

6.How does Aetrix verify that IRF8707GTRPBF is sourced from the original manufacturer or authorized distributors?

All IRF8707GTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8707GTRPBF meets industry standards.

7.What is the process for return or replacement of IRF8707GTRPBF?

All IRF8707GTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8707GTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF8707GTRPBF part is unused and in its original packaging.

Return procedure for IRF8707GTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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