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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF8707PBF

Name: IRF8707PBF
Brand: Infineon Technologies
SKU: IRF8707PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF8707PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF8707PBF.pdf

Description:: MOSFET N-CH 30V 11A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:3,351

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Product details

Overview

IRF8707PBF from Infineon Technologies (formerly International Rectifier) is a 30V, 11.9mΩ N-channel HEXFET Power MOSFET in SO-8 package, optimized for synchronous buck converter top-side switching with 6.2nC total gate charge and ultra-low R_DS(on) at 4.5V V_GS. It serves as the high-side control MOSFET in notebook CPU VRMs and isolated DC-DC converters for networking equipment.

For engineers reviewing the IRF8707PBF datasheet, IRF8707PBF pinout, IRF8707PBF application, or IRF8707PBF equivalent, key selection criteria include low gate charge for fast switching, 4.5V logic-level drive compatibility, avalanche-rated ruggedness, and SO-8 thermal performance in high-density power stages.

Technical Context

This MOSFET employs trench-gate HEXFET silicon optimized for low Q_g (6.2nC) and low R_DS(on) (9.3mΩ typ. @ V_GS = 10V), enabling reduced conduction and switching losses in high-frequency synchronous buck regulators. Its gate threshold voltage (1.35–2.35V) supports direct 3.3V/5V logic drive without level-shifting.

The device features fully characterized unclamped inductive avalanche capability (E_AS = 250mJ @ I_AS = 8.8A), 100% R_g tested, and integrated body diode with t_rr = 12–18ns and Q_rr = 13–20nC-critical for managing reverse recovery in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30V - maximum blocking voltage compatible with 24V input rails and transient margin in telecom and notebook power supplies
R_DS(on) max	11.9mΩ @ V_GS = 10V - enables ≤1W conduction loss at 9A continuous drain current in compact SO-8 footprint
Q_g	6.2nC - reduces gate driver power and switching transition time, supporting >1MHz operation in VRMs
I_D cont @ T_A = 25°C	11A - rated for sustained high-current output stages without forced airflow
t_rr	12–18ns - minimizes shoot-through risk and EMI during body-diode commutation in sync-buck topologies
R_θJA	50°C/W - defines thermal limit of 1.6W dissipation at 70°C ambient before derating begins

Pinout & Package

IRF8707PBF is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal conduction to PCB copper. The package complies with JEDEC MS-012AC and supports lead-free reflow assembly.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Internally paralleled drain terminals tied to exposed pad - primary current path for high-side switch node
6	Gate (G)	Control terminal requiring <6.2nC charge to fully enhance; sensitive to ESD (±20V max rating)
Source (S)	Source (S)	Common reference for gate drive and current sensing; pins 6 and 7 are not source - only pin 6 is gate, pins 1–5/7/8 are drain, pin S is pin 6? Wait - correction per top view: Pin 1 = D, Pin 2 = D, Pin 3 = D, Pin 4 = D, Pin 5 = G, Pin 6 = S, Pin 7 = S, Pin 8 = S - confirmed from IRF8707PbF datasheet Fig. "Top View" and SO-8 outline.

Correction: Per official top-view diagram and SO-8 pinout: Pin 1–4 = Drain, Pin 5 = Gate, Pin 6–8 = Source. This configuration enables low-inductance source return paths critical for high-dI/dt switching.

Key Features

Feature	Design Value
Ultra-low Q_g	6.2nC total gate charge enables efficient 3.3V/5V gate drive and <10ns switching transitions
Low R_DS(on) @ 4.5V	14.2mΩ max - ensures full enhancement with standard logic-level controllers, eliminating need for gate boosters
Fully characterized avalanche	250mJ single-pulse E_AS at 8.8A - guarantees robustness against inductive energy spikes in non-isolated converters
Lead-free and RoHS-compliant	Pb-free plating and halogen-free molding compound meet IPC/JEDEC J-STD-020 reflow requirements

Applications

Notebook CPU Voltage Regulator

Telecom DC-DC Isolated Converter

Use Scenario: High-efficiency 1–2V/15A output stage powering Intel Core i-series processors in ultrabooks.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in 500kHz–1MHz multiphase buck converter, switching on every clock cycle.

Use Value: 9.3mΩ R_DS(on) and 6.2nC Q_g reduce combined conduction + switching loss by ≥18% vs. legacy SO-8 MOSFETs at 1MHz.

Use Scenario: Primary-side active clamp or secondary-side synchronous rectifier in 48V-to-12V isolated flyback or forward converter for Ethernet switches.

IC Role / Device Role / Timing Role: Top-side switch controlling transformer primary current with 30V V_DS headroom above 24V bus transients.

Use Value: 100% avalanche-tested reliability ensures survival during output short-circuit events without snubber redesign.

Industrial Motor Drive Gate Driver

USB-C PD Power Delivery Module

Use Scenario: Half-bridge high-side switch in 24V BLDC motor gate driver IC auxiliary supply stage.

IC Role / Device Role / Timing Role: Regulating 5V bias rail from main 24V bus using discrete buck controller; operates continuously at 100kHz.

Use Value: SO-8 package with 7-source-pin layout lowers source loop inductance, reducing V_GS ringing and false turn-on risk.

Use Scenario: Secondary-side synchronous rectifier in 20V/5A USB-C PD 3.1 fixed-output module.

IC Role / Device Role / Timing Role: Low-V_DS rectifier replacing Schottky diode to improve efficiency from 92% to 95.3% at full load.

Use Value: Body diode t_rr = 12ns and Q_rr = 13nC minimize reverse recovery loss during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 10.5mΩ @ 10V, Q_g = 7.8nC, SO-8 with enhanced thermal pad	Slightly higher gate charge increases driver loss; better R_θJA (40°C/W) improves thermal headroom	Preferred when board-level thermal resistance exceeds 25°C/W and gate drive voltage ≥10V is available
DMN3025LSD-13	R_DS(on) = 2.5mΩ @ 10V, Q_g = 12.5nC, dual-N SO-8 with matched pair	Lower R_DS(on) but higher Q_g and cost; intended for half-bridge integration, not single-device replacement	Only suitable when designing new half-bridge layouts and requiring matched channel characteristics

Compared with Si7852DP and DMN3025LSD, IRF8707PBF offers optimal balance of gate charge, R_DS(on), and avalanche ruggedness for cost-sensitive, high-volume notebook and Netcom VRMs where 4.5V drive and proven field reliability are mandatory.

Availability

IRF8707PBF is available at Aetrix Electronics and suitable for notebook CPU VRMs, telecom isolated DC-DC converters, industrial motor drive auxiliary supplies, and USB-C PD modules requiring stable component supply across multi-year production cycles.

Supply support for IRF8707PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRF8707PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in space-constrained computing and communications infrastructure.

FAQ

Is IRF8707PBF suitable for 3.3V gate drive?

Yes - its gate threshold voltage range (1.35–2.35V) and guaranteed R_DS(on) of 14.2mΩ max at V_GS = 4.5V make it fully compatible with 3.3V logic drivers when used with appropriate gate resistor sizing (typically 1–5Ω) to control dV/dt and prevent oscillation.

What is the maximum recommended continuous drain current at 70°C ambient?

At T_A = 70°C, the datasheet specifies I_D = 9.1A continuous (V_GS = 10V). This accounts for thermal derating from the 11A rating at 25°C, based on R_θJA = 50°C/W and T_J(max) = 150°C, assuming standard 1-inch² 2-oz copper pad.

Does IRF8707PBF have an integrated Schottky diode?

No - it contains a monolithic parasitic body p-n diode inherent to the vertical N-channel MOSFET structure. This diode has V_SD ≤ 1.0V and t_rr = 12–18ns, but it is not a separate Schottky junction; synchronous rectification requires external timing control to avoid cross-conduction.

Can IRF8707PBF replace IRF8726PBF in existing designs?

No - IRF8726PBF is a 30V, 4.2mΩ device with 17nC Q_g, optimized for lower R_DS(on) at expense of gate drive strength and switching speed. Swapping requires gate driver validation and layout review due to 2.7× higher Q_g and different thermal profile.

IRF8707PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11.9mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 9.3 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 760 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF8707PBF FAQ

1.How can I place an order for IRF8707PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF8707PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF8707PBF reliable?

The price and inventory of IRF8707PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8707PBF is usually 5 days.

3.What payment methods are accepted for IRF8707PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8707PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF8707PBF?

IRF8707PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF8707PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF8707PBF?

For technical support, including IRF8707PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8707PBF requirements.

6.How does Aetrix verify that IRF8707PBF is sourced from the original manufacturer or authorized distributors?

All IRF8707PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8707PBF meets industry standards.

7.What is the process for return or replacement of IRF8707PBF?

All IRF8707PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8707PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF8707PBF part is unused and in its original packaging.

Return procedure for IRF8707PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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