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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF8714GPBF

Name: IRF8714GPBF
Brand: Infineon Technologies
SKU: IRF8714GPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF8714GPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF8714GPBF.pdf

Description:: MOSFET N-CH 30V 14A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF8714GPBF from Infineon Technologies (formerly International Rectifier) is a 30V, 14A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for synchronous buck converter topologies with R_DS(on) = 7.1 mΩ @ V_GS = 10 V, Q_g = 8.1 nC, and ultra-low gate impedance. It serves as the high-side or low-side control switch in notebook CPU VRMs and isolated DC-DC converters for networking equipment.

For engineers reviewing the IRF8714GPBF datasheet, IRF8714GPBF pinout, IRF8714GPBF application, or IRF8714GPBF equivalent, key selection criteria include its 8.7 mΩ max R_DS(on) at 4.5 V drive, 100% R_g tested, avalanche-rated construction, and SO-8 footprint compatibility with standard PCB layout practices for high-frequency power stages.

Technical Context

This MOSFET employs trench-gate HEXFET silicon technology to minimize conduction and switching losses simultaneously-critical for >90% efficiency in 300 kHz–1 MHz synchronous buck regulators. Its gate charge profile (Q_gd = 3.0 nC, Q_sw = 4.0 nC) enables fast, low-loss transitions under 4.5 V logic-level drive.

The device integrates a fully characterized body diode (V_SD ≤ 1.0 V @ I_S = 11 A, t_rr = 14–21 ns) and supports unclamped inductive switching up to 300 mJ at I_AS = 11 A, enabling robust operation in hard-switched topologies without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in telecom and notebook power supplies.
R_DS(on) max @ 10 V	8.7 mΩ - Enables ≤1.7 W conduction loss at 14 A DC, reducing thermal stress in compact VRM layouts.
Q_g	8.1 nC - Low total gate charge allows full turn-on with <10 mA peak gate driver current at 1 MHz switching.
R_g	1.6–2.6 Ω - Ultra-low intrinsic gate resistance minimizes gate ringing and improves EMI performance in high-dV/dt environments.
E_AS	65 mJ - Single-pulse avalanche energy rating ensures reliable operation during load dump or short-circuit transients.
C_iss	1020 pF - Input capacitance value directly impacts gate drive loop stability and required Miller charge compensation.

Pinout & Package

SO-8 surface-mount package (JEDEC MS-012AC), 5.0 mm × 6.0 mm footprint, 1.75 mm max height, with exposed drain pad for enhanced thermal dissipation. Pin 1 marked by notch or dot; leads are lead-free and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–20 V logic-level drive; low C_iss/C_rss ratio reduces Miller-induced shoot-through risk.
2 (S)	Source	Power return node; tied to ground or low-side switch source; forms common reference for gate drive and current sensing.
3 (S)	Source	Second source connection; paralleled internally to reduce source inductance and improve current sharing in high-di/dt operation.
4 (S)	Source	Third source connection; further lowers effective source inductance and enhances thermal path to PCB copper.
5 (D)	Drain	Main power output terminal; connected to exposed pad; requires thermal via array to inner ground plane for R_θJA ≤ 50 °C/W.
6 (D)	Drain	Second drain connection; internal parallel routing reduces drain inductance and improves high-frequency switching fidelity.
7 (D)	Drain	Third drain connection; reinforces current handling and thermal conduction from die to package backside.
8 (D)	Drain	Fourth drain connection; completes low-inductance, high-current path to PCB power plane or heatsink.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	10.9 mΩ max - Enables direct interface with 3.3 V/5 V PWM controllers without level-shifting, reducing BOM count.
Fully characterized avalanche	65 mJ E_AS, 11 A I_AR - Eliminates need for external clamping circuits in flyback or synchronous rectifier applications.
100% R_g tested	1.6–2.6 Ω range - Guarantees consistent gate drive timing across production lots, critical for multi-phase current balancing.
Lead-free & halogen-free	RoHS-compliant materials and finish - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life.

Applications

Notebook CPU Voltage Regulator Module (VRM)

Isolated Telecom DC-DC Converter

Use Scenario: Powers Intel Core i-series or AMD Ryzen mobile processors requiring dynamic 0.7–1.4 V output at up to 100 A per phase.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500–1000 kHz with 4.5 V gate drive from integrated controller.

Use Value: 7.1 mΩ R_DS(on) at 4.5 V reduces conduction loss by 35% vs. legacy 12 mΩ devices, enabling smaller heatsinks and higher power density.

Use Scenario: Secondary-side synchronous rectifier in 48 V–12 V isolated DC-DC modules for 5G baseband units and edge routers.

IC Role / Device Role / Timing Role: High-efficiency rectifying switch replacing Schottky diodes in forward or LLC topologies.

Use Value: Body diode t_rr = 14 ns and Q_rr = 15 nC minimize reverse recovery loss, improving full-load efficiency by 1.2% over 40 V Schottkys.

High-Density Point-of-Load (PoL) Converter

Industrial Motor Control Gate Driver Stage

Use Scenario: 12 V input, 3.3 V/20 A output PoL regulator on FPGA or ASIC carrier boards in test and measurement systems.

IC Role / Device Role / Timing Role: High-side control switch with integrated bootstrap gate drive and tight R_DS(on) matching across temperature.

Use Value: R_DS(on) tempco of 0.021 V/°C ensures stable current sharing in dual-phase configurations up to 125°C junction.

Use Scenario: Half-bridge high-side switch in 24 V BLDC motor gate driver IC reference designs for HVAC actuators and robotics.

IC Role / Device Role / Timing Role: Fast-switching N-channel driver stage requiring low Q_gd/Q_gs ratio to suppress shoot-through during dead-time transitions.

Use Value: Q_gd = 3.0 nC and Q_sw = 4.0 nC enable <20 ns turn-off delay, supporting 100 kHz PWM with 100 ns dead time.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 6.7 mΩ @ 10 V, Q_g = 10.2 nC, SO-8, 30 V	Higher gate charge increases driver loss at >1 MHz; better R_DS(on) suits lower-frequency, higher-current apps	Prefer for 300–500 kHz industrial PoL where conduction loss dominates.
IPB80N04S4-02	R_DS(on) = 2.0 mΩ @ 10 V, TO-263, 40 V, Q_g = 54 nC	Larger package and higher Q_g require stronger gate drivers; superior thermal R_θJA (30 °C/W)	Choose when board space allows TO-263 and >60 A continuous current is needed.

Compared with SiR872DP-T1-GE3 and IPB80N04S4-02, the IRF8714GPBF offers the best balance of low Q_g and mid-range R_DS(on) in SO-8, making it optimal for high-frequency, space-constrained notebook and telecom VRMs where gate drive capability and thermal footprint are constrained.

Availability

IRF8714GPBF is available at Aetrix Electronics and suitable for notebook CPU VRMs, isolated telecom DC-DC converters, and high-density point-of-load regulators requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for IRF8714GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.

The IRF8714GPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF8714GPBF supports 11 A continuous drain current at T_A = 70°C with proper PCB copper area (≥1 in² 2 oz Cu) and no forced airflow. This rating assumes SO-8 package mounted on standard FR-4 with thermal vias to inner ground layers, per the manufacturer's recommended layout in AN-1040.

Does this MOSFET require a gate resistor for stability?

A 2.2–4.7 Ω gate resistor is recommended between driver output and pin 1 (G) to dampen parasitic oscillation caused by trace inductance and C_iss. The device's intrinsic R_g = 1.6–2.6 Ω alone is insufficient to suppress ringing above 500 kHz; external resistance ensures clean turn-on/turn-off waveforms.

Can IRF8714GPBF be used as a replacement for IRF8726PbF?

No-IRF8726PbF has 3.2 mΩ R_DS(on) @ 10 V and 21 nC Q_g, targeting higher-current, lower-frequency applications. IRF8714GPBF's lower Q_g and higher R_DS(on) make it unsuitable as a drop-in replacement; layout and gate drive must be re-optimized for its faster switching and different loss distribution.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At 100 µs pulse width and T_J = 25°C, the IRF8714GPBF supports up to 14 A at 24 V V_DS before entering the R_DS(on)-limited region. Beyond that, operation is constrained by peak power dissipation (110 W) and must remain below the SOA curve shown in Figure 8 of the datasheet to avoid thermal runaway.

IRF8714GPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.7mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1020 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF8714GPBF FAQ

1.How can I place an order for IRF8714GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF8714GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF8714GPBF reliable?

The price and inventory of IRF8714GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8714GPBF is usually 5 days.

3.What payment methods are accepted for IRF8714GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8714GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF8714GPBF?

IRF8714GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF8714GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF8714GPBF?

For technical support, including IRF8714GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8714GPBF requirements.

6.How does Aetrix verify that IRF8714GPBF is sourced from the original manufacturer or authorized distributors?

All IRF8714GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8714GPBF meets industry standards.

7.What is the process for return or replacement of IRF8714GPBF?

All IRF8714GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8714GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF8714GPBF part is unused and in its original packaging.

Return procedure for IRF8714GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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