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Infineon Technologies IRF8714GTRPBF
- Part No.:
- IRF8714GTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF8714GTRPBF.pdf
- Description:
- MOSFET N-CH 30V 14A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,706
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Product details
Overview
IRF8714GTRPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for synchronous buck converter top-side switching with 30V VDSS, 8.7 mΩ RDS(on) at VGS = 10 V, 8.1 nC total gate charge, and fully characterized avalanche capability. It serves as the high-side control MOSFET in notebook CPU VRMs and isolated DC-DC converters for networking equipment.
For engineers reviewing the IRF8714GTRPBF datasheet, IRF8714GTRPBF pinout, IRF8714GTRPBF application, or IRF8714GTRPBF equivalent, key selection criteria include low RDS(on) at 4.5 V drive, ultra-low gate impedance (1.6 Ω typ), avalanche energy rating (65 mJ), body diode reverse recovery charge (15–23 nC), and SO-8 thermal performance (RθJA = 50 °C/W).
Technical Context
This MOSFET employs trench-gate HEXFET silicon optimized for high-frequency synchronous rectification. Its low Qgd/Qgs2 ratio (3.0/1.0 nC) enables fast, controllable turn-off with minimal Miller-induced shoot-through risk in buck stages.
It features a fully rated 20 V gate-source voltage limit, ±20 V absolute maximum VGS, and 100% Rg tested - critical for consistent gate drive timing and EMI control in multi-phase VRMs operating up to 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - supports input rails up to 24 V with margin for transient overshoot in notebook and telecom DC-DC inputs |
| RDS(on) max | 8.7 mΩ @ VGS = 10 V - enables <1 W conduction loss at 14 A continuous drain current in high-current VRM phases |
| Qg | 8.1 nC - reduces gate driver power demand and switching transition time in 300–1000 kHz buck converters |
| Rg | 1.6 Ω typ - ensures predictable gate ring suppression without external gate resistors in compact layouts |
| EAS | 65 mJ - withstands unclamped inductive switching events during startup/fault conditions in isolated flyback or forward converters |
| Qrr | 15–23 nC - minimizes body diode recovery loss and associated voltage spikes when used as high-side switch with synchronous rectifier |
| RθJA | 50 °C/W - allows 1.6 W dissipation at 70 °C ambient before exceeding 150 °C junction limit in standard SO-8 PCB layout |
Pinout & Package
SO-8 surface-mount package with exposed drain pad (thermal enhancement), 1.27 mm pitch, JEDEC MS-012AC compliant. Pin 1 marked by notch or dot; pins 1–4 source, pin 5 gate, pins 6–8 drain (internally paralleled).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–4 (S) | Source terminal | Common source connection for internal die array; low-inductance return path for high di/dt currents |
| 5 (G) | Gate terminal | Single-point gate input; requires controlled trace routing to minimize ringing and EMI coupling |
| 6–8 (D) | Drain terminal | Internally paralleled drain leads tied to exposed copper pad; primary thermal path to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate charge | 8.1 nC total - cuts gate driver losses and enables efficient operation with low-VGS controllers (e.g., 4.5 V logic-level drive) |
| Low RDS(on) at 4.5 V | 10.9 mΩ max - maintains efficiency in 5 V-input synchronous buck stages without requiring 10 V gate bias |
| Fully characterized avalanche | 65 mJ single-pulse rating - eliminates need for external snubbers in inductive load switching applications |
| 100% Rg tested | 1.6–2.6 Ω range - guarantees consistent gate timing across production lots for tight phase alignment in multi-phase VRMs |
| Lead-free & halogen-free | RoHS-compliant construction - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for standard reflow assembly |
Applications
| Notebook CPU Voltage Regulator | Isolated Telecom DC-DC Converter |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying 1.0–1.5 V @ up to 100 A to Intel/AMD mobile processors. IC Role / Device Role / Timing Role: Top-side control MOSFET switching at 300–600 kHz with precise dead-time control to prevent shoot-through. Use Value: 8.7 mΩ RDS(on) and 8.1 nC Qg reduce combined conduction + switching loss below 1.2 W per phase at full load. | Use Scenario: Primary-side active clamp or synchronous rectifier in 48 V input isolated forward/flyback converters for Ethernet switches. IC Role / Device Role / Timing Role: High-side switch handling 24–30 V bus with fast turn-off (11 ns td(off)) to minimize cross-conduction loss. Use Value: 65 mJ EAS and 15 nC Qrr suppress voltage spikes during transformer reset and improve reliability under line transients. |
| Industrial Motor Drive Gate Driver | USB-C PD Power Delivery Module |
Use Scenario: Half-bridge high-side switch in 24 V BLDC motor gate driver IC reference designs. IC Role / Device Role / Timing Role: Level-shifted gate driver output stage delivering 14 A peak current into capacitive gate loads. Use Value: 1.6 Ω Rg and low Ciss (1020 pF) ensure clean, damped gate transitions without added series resistance. | Use Scenario: Secondary-side synchronous rectifier in 20 V/5 A USB-C PD 3.0 AC-DC adapter. IC Role / Device Role / Timing Role: Low-voltage-drop replacement for Schottky diode in 5–20 V output stage, driven by dedicated SR controller. Use Value: 1.0 V VSD body diode forward voltage and 14 ns trr enable >95% efficiency at light loads while reducing thermal stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | 30 V, 7.0 mΩ RDS(on), 11.5 nC Qg, PowerPAK SO-8 package | Higher gate charge increases driver loss; lower RDS(on) improves conduction efficiency at high current | Prefer for thermally constrained 100+ A VRMs where conduction loss dominates |
| DMN3025LFG-7 | 30 V, 2.5 mΩ RDS(on), 14.5 nC Qg, SOT-23-3 package (single-die) | Lower RDS(on) but limited to 6.5 A continuous; unsuitable for >10 A buck phases | Only suitable for low-current auxiliary rails or discrete gate drivers, not main CPU power stages |
Compared with SiR872DP-T1-GE3 and DMN3025LFG-7, the IRF8714GTRPBF offers optimal balance of gate drive simplicity (low Qg), robustness (65 mJ EAS), and SO-8 manufacturability - making it preferred for cost-sensitive, high-volume notebook and netcom VRMs where 10–14 A per phase is typical.
Availability
IRF8714GTRPBF is available at Aetrix Electronics and suitable for notebook CPU voltage regulation, isolated telecom DC-DC converters, and industrial motor gate driver reference designs requiring stable component supply and long-term production continuity.
Supply support for IRF8714GTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The IRF8714GTRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in portable computing and communications infrastructure.
FAQ
Is IRF8714GTRPBF suitable for 4.5 V gate drive in synchronous buck applications?
Yes. The device specifies RDS(on) = 10.9 mΩ max at VGS = 4.5 V and ID = 11 A, enabling efficient operation with common 5 V logic-level PWM controllers. Its low gate threshold (1.35–2.35 V) ensures reliable turn-on even with gate drive droop under heavy load.
What is the maximum continuous drain current at 70 °C ambient temperature?
The datasheet specifies 11 A continuous drain current at TA = 70 °C with SO-8 mounting on 1-in² 2-oz copper. This assumes standard JEDEC test board layout; actual current depends on PCB copper area, airflow, and thermal vias - derating is required above 70 °C ambient.
Does IRF8714GTRPBF include integrated ESD protection on the gate?
No. The device has no built-in gate ESD protection diodes. External gate protection (e.g., 12 V Zener clamp between gate and source) is recommended in systems exposed to handling or system-level ESD events, especially in automated assembly environments.
Can IRF8714GTRPBF be used as a synchronous rectifier in secondary-side LLC resonant converters?
Yes, but only with appropriate gate drive timing. Its 14 ns reverse recovery time and 15 nC Qrr allow use as a synchronous rectifier when driven by a dedicated SR controller with adaptive dead-time control - however, its 30 V rating limits use to ≤20 V output stages.
IRF8714GTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.7mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1020 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF8714GTRPBF FAQ
1.How can I place an order for IRF8714GTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF8714GTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF8714GTRPBF reliable?
The price and inventory of IRF8714GTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8714GTRPBF is usually 5 days.
3.What payment methods are accepted for IRF8714GTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8714GTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF8714GTRPBF?
IRF8714GTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF8714GTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF8714GTRPBF?
For technical support, including IRF8714GTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8714GTRPBF requirements.
6.How does Aetrix verify that IRF8714GTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF8714GTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8714GTRPBF meets industry standards.
7.What is the process for return or replacement of IRF8714GTRPBF?
All IRF8714GTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8714GTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF8714GTRPBF part is unused and in its original packaging.
Return procedure for IRF8714GTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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