Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF8721GPBF

Name: IRF8721GPBF
Brand: Infineon Technologies
SKU: IRF8721GPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF8721GPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF8721GPBF.pdf

Description:: MOSFET N-CH 30V 14A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,394

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF8721GPBF from Infineon Technologies (formerly International Rectifier) is a 30V N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for synchronous buck converter top-side switching with R_DS(on) = 6.9 mΩ @ V_GS = 10 V, Q_g = 8.3 nC, and 11 A continuous drain current at T_A = 25°C. It serves as the high-side control switch in notebook CPU VRMs and isolated DC-DC converters for networking equipment.

For engineers reviewing the IRF8721GPBF datasheet, IRF8721GPBF pinout, IRF8721GPBF application, or IRF8721GPBF equivalent, key selection criteria include gate charge vs. switching loss trade-off, R_DS(on) temperature stability up to 150°C, avalanche ruggedness (E_AS = 68 mJ), and SO-8 thermal performance under high-frequency PWM operation.

Technical Context

This MOSFET employs trench-gated HEXFET silicon optimized for low gate charge and sub-10 mΩ on-resistance at 4.5 V drive-enabling efficient operation in 5 V and 12 V input synchronous buck stages. Its fully characterized unclamped inductive switching (UIS) capability supports robust transient handling in hard-switched topologies.

The device features a co-packaged body diode with t_rr = 14–21 ns and Q_rr = 15–23 nC, enabling fast reverse recovery in high-frequency phase-shifted or active-clamp converters. Thermal resistance R_θJA = 50 °C/W and R_θJL = 20 °C/W support direct PCB copper pour cooling in compact power modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and 15 V gate drive margin.
R_DS(on) max	8.5 mΩ @ V_GS = 10 V - Enables ≤1.5 W conduction loss at 11 A DC load in notebook VRMs.
Q_g	8.3 nC - Low total gate charge reduces driver power and enables <10 ns turn-on delay (t_d(on) = 8.2 ns).
I_D cont	11 A @ T_A = 25°C - Supports high-current, low-voltage CPU core supplies without forced airflow.
E_AS	68 mJ - Single-pulse avalanche energy rating ensures reliability during output short-circuit or startup transients.
t_rr	14–21 ns - Fast body diode recovery minimizes shoot-through risk and dead-time overhead in sync-buck designs.
C_iss	1040 pF - Input capacitance value used to size gate driver output impedance for optimal slew rate control.

Pinout & Package

IRF8721GPBF uses the industry-standard SO-8 surface-mount package with exposed drain pad for enhanced thermal dissipation. The package footprint matches JEDEC MS-012AC and supports standard reflow profiles for lead-free assembly.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Internally connected to exposed metal pad - primary current path and thermal conduction path to PCB copper.
5	Gate (G)	Control terminal requiring <8.3 nC charge to fully enhance; sensitive to ESD (±20 V max rating).
6	Source (S)	Reference node for gate drive; connects to power ground plane and carries full load current return path.

Key Features

Feature	Design Value
Low gate charge	Q_g = 8.3 nC enables use of low-power gate drivers (e.g., IR1167, UCC27531) without sacrificing switching speed.
Optimized R_DS(on) at 4.5 V	10.6 mΩ @ V_GS = 4.5 V supports direct drive from 5 V logic in cost-sensitive netcom DC-DC controllers.
Fully characterized avalanche	E_AS = 68 mJ and I_AR = 11 A validated per JEDEC JESD24-1 - eliminates need for external snubbers in flyback or LLC resonant designs.
Lead-free & halogen-free	Meets IPC/JEDEC J-STD-609A Class 1 moisture sensitivity and RoHS 2015/863 compliance for global OEM production.
SO-8 thermal performance	R_θJL = 20 °C/W allows >2.5 W power dissipation with 1-in² 2-oz copper pour - suitable for space-constrained VRM layouts.

Applications

Notebook Processor VRM

Networking DC-DC Converter

Use Scenario: High-efficiency 1–2 V, 15–30 A CPU core supply in ultrabook platforms with strict thermal envelope.

IC Role / Device Role / Timing Role: Top-side synchronous rectifier switch operating at 300–1000 kHz with 4.5–12 V gate drive.

Use Value: 6.9 mΩ R_DS(on) and 8.3 nC Q_g reduce combined conduction + switching losses by ≥18% vs. legacy 12 mΩ SO-8 MOSFETs.

Use Scenario: Primary-side high-side switch in 48 V input isolated forward or half-bridge DC-DC modules for telecom base stations.

IC Role / Device Role / Timing Role: Hard-switched 300 kHz control MOSFET with 15 V gate drive and 24 V clamp voltage.

Use Value: 68 mJ E_AS rating withstands repetitive line transients without derating, eliminating need for external TVS clamping.

Industrial Motor Drive Gate Driver

LED Backlight Boost Controller

Use Scenario: Level-shifting high-side driver stage in 24 V BLDC motor gate driver ICs (e.g., IR2101-based designs).

IC Role / Device Role / Timing Role: Floating high-side switch controlling bootstrap capacitor recharge path with 100 ns minimum dead time.

Use Value: 1.35–2.35 V V_GS(th) range ensures reliable turn-on across -40°C to +125°C ambient with minimal gate drive overshoot.

Use Scenario: Synchronous rectifier in 12 V input boost LED backlight driver for LCD panels (e.g., 30–60 V, 1.5 A output).

IC Role / Device Role / Timing Role: Low-loss freewheeling switch conducting during inductor discharge phase at 500 kHz.

Use Value: Body diode t_rr = 14 ns and Q_rr = 15 nC minimize reverse recovery loss and EMI generation in high-frequency boost stages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 6.0 mΩ @ 10 V, Q_g = 10.5 nC, SO-8 with enhanced thermal pad	Higher conduction efficiency but 27% higher gate drive demand; requires stronger driver	Preferred when minimizing I²R loss dominates over gate drive power budget
IPB80N04S4-02	R_DS(on) = 2.0 mΩ @ 10 V, TO-263 package, Q_g = 42 nC	Lower R_DS(on) but 5× higher Q_g and larger footprint - unsuitable for SO-8 board space constraints	Select only if thermal headroom permits TO-263 mounting and gate driver can source >1 A peak

Compared with SiR872DP-T1-GE3 and IPB80N04S4-02, IRF8721GPBF delivers optimal balance of gate drive simplicity, SO-8 compatibility, and thermal performance for space-limited 30 V synchronous buck designs - especially where 8.3 nC Q_g enables use of integrated drivers without external buffer stages.

Availability

IRF8721GPBF is available at Aetrix Electronics and suitable for notebook VRMs, networking DC-DC converters, industrial motor gate drivers, and LED backlight boost controllers requiring stable component supply and long-term lifecycle support.

Supply support for IRF8721GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF8721GPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in portable computing and communications infrastructure where low Q_g/R_DS(on) ratio is critical.

FAQ

What is the maximum safe operating voltage for IRF8721GPBF gate-to-source terminals?

The absolute maximum V_GS rating is ±20 V, with typical gate threshold voltage ranging from 1.35 V to 2.35 V. Exceeding ±20 V risks permanent gate oxide damage; design practice limits gate drive to 12–15 V with series gate resistor to suppress ringing and overshoot during fast switching.

Can IRF8721GPBF be used in parallel configurations for higher current handling?

Yes, but only with matched devices and individual gate resistors (≥5 Ω) to ensure current sharing. Its positive R_DS(on) temperature coefficient (0.021 V/°C) supports inherent thermal balancing, though layout symmetry and Kelvin source connections are mandatory to avoid oscillation or unequal stress.

Does IRF8721GPBF require a gate driver IC, or can it be driven directly from a microcontroller GPIO?

Direct GPIO drive is not recommended: 8.3 nC Q_g demands >10 mA average gate current at 1 MHz switching, exceeding most MCU pin ratings. A dedicated gate driver (e.g., TC4427, MIC4423) with ≥2 A peak output is required to achieve specified t_r = 11 ns and prevent shoot-through in half-bridge configurations.

How does the body diode performance impact its use in synchronous rectification?

The intrinsic body diode has V_SD ≤ 1.0 V at 11 A and t_rr = 14–21 ns, making it suitable for synchronous rectification only when actively commutated before reverse recovery begins. In non-synchronous designs, its low Q_rr (15–23 nC) reduces voltage spikes and EMI compared to standard FRDs.

IRF8721GPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1040 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF8721GPBF FAQ

1.How can I place an order for IRF8721GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF8721GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF8721GPBF reliable?

The price and inventory of IRF8721GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8721GPBF is usually 5 days.

3.What payment methods are accepted for IRF8721GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8721GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF8721GPBF?

IRF8721GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF8721GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF8721GPBF?

For technical support, including IRF8721GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8721GPBF requirements.

6.How does Aetrix verify that IRF8721GPBF is sourced from the original manufacturer or authorized distributors?

All IRF8721GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8721GPBF meets industry standards.

7.What is the process for return or replacement of IRF8721GPBF?

All IRF8721GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8721GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF8721GPBF part is unused and in its original packaging.

Return procedure for IRF8721GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…