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Infineon Technologies IRF8721GTRPBF
- Part No.:
- IRF8721GTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF8721GTRPBF.pdf
- Description:
- MOSFET N-CH 30V 14A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:5,788
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Product details
Overview
IRF8721GTRPBF from Infineon Technologies is a 30V N-channel Trench MOSFET in SO-8 package, optimized for synchronous buck converter top-side switching with 8.5 mΩ RDS(on) at VGS = 10 V, 8.3 nC total gate charge, and 11 A continuous drain current at TA = 25°C. It serves as the high-side control MOSFET in notebook CPU VRMs and isolated DC-DC converters for networking equipment.
For engineers reviewing the IRF8721GTRPBF datasheet, IRF8721GTRPBF pinout, IRF8721GTRPBF application, or IRF8721GTRPBF equivalent, key selection criteria include low gate charge for high-frequency switching, 4.5 V logic-level drive capability, avalanche-rated ruggedness, and SO-8 thermal performance under pulsed load conditions.
Technical Context
This MOSFET uses Infineon's HEXFET silicon technology with trench-gate architecture to minimize conduction and switching losses simultaneously. Its 6.9 mΩ typical RDS(on) at 10 V and 8.3 nC Qg enable efficient operation in 300–1000 kHz synchronous buck stages powering modern mobile processors.
The device integrates a robust body diode with 14–21 ns reverse recovery time and 15–23 nC Qrr, supporting hard-switched topologies without external Schottky supplementation. Fully characterized unclamped inductive switching (UIS) up to 300 mJ ensures reliability under transient overloads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails and 12 V intermediate bus systems |
| RDS(on) max | 8.5 mΩ @ VGS = 10 V - Enables ≤1.5 W conduction loss at 11 A DC, critical for thermally constrained VRM layouts |
| Qg | 8.3 nC - Reduces gate driver power demand and switching transition time in high-frequency (>500 kHz) converters |
| ID cont | 11 A @ TA = 25°C - Supports sustained output currents up to 15 A with proper PCB copper area and airflow |
| EAS | 68 mJ - Withstands single-pulse inductive energy surges during hot-plug or load dump events in DC-DC modules |
| VGS(th) | 1.35–2.35 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers |
| Ciss | 1040 pF - Predictable input capacitance simplifies gate drive loop stability analysis and snubber design |
Pinout & Package
SO-8 surface-mount package with exposed drain pad for enhanced thermal dissipation; lead-free and halogen-free per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Parallel-connected internal drain terminals tied to exposed pad - primary current path and thermal conduction path to PCB |
| 6 | Gate (G) | Control terminal requiring <8.3 nC charge for full enhancement; sensitive to ESD but tolerant of ±20 V transient |
| Source (S) | Source (S) | Reference node for gate drive and current sensing; pins 1–5 and 7–8 are internally connected to drain, not source |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg/RDS(on) ratio | 0.97 nC/mΩ - Optimized trade-off enabling high efficiency across light-to-heavy loads in buck converters |
| Logic-level gate drive | Turns on fully at VGS ≥ 4.5 V - Eliminates need for level-shifting circuitry in 5 V or 3.3 V controller designs |
| Characterized UIS ruggedness | 68 mJ single-pulse avalanche energy - Validated for operation under unclamped inductive switching stress without derating |
| Enhanced body diode | Qrr = 15–23 nC, trr = 14–21 ns - Minimizes shoot-through risk and reverse recovery loss in synchronous rectification |
Applications
| Notebook CPU Voltage Regulator | Networking DC-DC Converter |
|---|---|
Use Scenario: High-current, multi-phase VRM supplying Intel/AMD mobile processors with dynamic load steps up to 100 A/µs. IC Role / Device Role / Timing Role: Top-side synchronous rectifier MOSFET in 300–600 kHz buck stage, switched by integrated PWM controller. Use Value: 8.5 mΩ RDS(on) and 8.3 nC Qg reduce combined conduction + switching loss by >18% vs. legacy SO-8 MOSFETs at 12 A load. | Use Scenario: Primary-side switch in isolated forward or active-clamp forward converters for 48 V telecom power supplies. IC Role / Device Role / Timing Role: High-side main switch operating at 200–500 kHz with 30 V blocking requirement and tight duty-cycle control. Use Value: 30 V VDS rating and 68 mJ EAS support safe operation during transformer leakage inductance spikes and line transients. |
| Industrial Motor Drive H-Bridge | USB-C PD Power Path |
Use Scenario: Half-bridge leg in compact BLDC gate driver modules for fans, pumps, and small actuators. IC Role / Device Role / Timing Role: Low-side or high-side switch in 10–100 kHz PWM-controlled H-bridge with bootstrap or isolated gate drive. Use Value: 11 A continuous current and 114 pF Crss enable clean commutation with minimal dv/dt-induced false triggering. | Use Scenario: Load switch in USB-C Power Delivery sink applications requiring 20 V input protection and 3 A continuous current. IC Role / Device Role / Timing Role: Reverse-voltage protected, low-RDS(on) pass transistor in 5–20 V input power path with fast OVP response. Use Value: 1.35–2.35 V VGS(th) allows precise gate control using microcontroller GPIO, while 8.5 mΩ limits voltage drop to <26 mV at 3 A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 9.5 mΩ @ 10 V; Qg = 9.2 nC; SO-8 with gull-wing leads | Slightly higher conduction loss; same thermal footprint but lower avalanche rating (EAS = 45 mJ) | Preferred where cost sensitivity outweighs marginal efficiency gain and surge margin |
| DMN3025LSD-13 | RDS(on) = 7.8 mΩ @ 10 V; Qg = 11.5 nC; dual-N in SO-8 | Lower RDS(on) but higher Qg; requires redesign for half-bridge integration | Best suited when replacing both high- and low-side switches in compact dual-MOSFET layouts |
Compared with Si7157DP-T1-GE3 and DMN3025LSD-13, the IRF8721GTRPBF delivers superior gate charge efficiency for high-frequency buck stages, while maintaining higher avalanche robustness than the Vishay part and lower switching loss than the Diodes Inc. dual-MOSFET-making it optimal for single-device, high-reliability VRM designs.
Availability
IRF8721GTRPBF is available at Aetrix Electronics and suitable for notebook CPU voltage regulation, telecom DC-DC conversion, industrial motor control, and USB-C PD power path applications requiring stable component supply and long-term manufacturability.
Supply support for IRF8721GTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The HEXFET Power MOSFET product line targets high-efficiency power conversion systems, with the IRF8721GTRPBF specifically engineered for low-voltage, high-current synchronous buck topologies in portable and network infrastructure equipment.
FAQ
Is IRF8721GTRPBF suitable for 3.3 V gate drive?
Yes. With a gate threshold voltage range of 1.35–2.35 V and guaranteed turn-on at VGS ≥ 4.5 V, the device operates reliably with 3.3 V logic-level drivers when used with appropriate gate resistor selection to manage dV/dt and ringing. Its low Qg (8.3 nC) reduces required drive current.
What is the maximum junction temperature during continuous operation?
The absolute maximum junction temperature is +150°C. Under continuous 11 A drain current at TA = 25°C, junction temperature rise is approximately 110°C (using RθJA = 50°C/W), resulting in TJ ≈ 135°C - within safe operating limits with adequate PCB copper area and airflow.
Does IRF8721GTRPBF have an integrated Schottky diode?
No. It features a monolithic body diode formed by the MOSFET's inherent p-n junction. This diode has measured VSD ≤ 1.0 V and trr = 14–21 ns, but is not a separate Schottky structure. For ultra-low forward drop, external Schottky clamping may be added in critical applications.
Can IRF8721GTRPBF replace IRF8721GPbF in existing designs?
Yes. IRF8721GTRPBF is the tape-and-reel packaging variant of IRF8721GPbF, sharing identical electrical specifications, thermal characteristics, pinout, and SO-8 footprint. The "TR" suffix denotes reel packaging; no design changes or requalification are needed for drop-in replacement.
IRF8721GTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1040 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF8721GTRPBF FAQ
1.How can I place an order for IRF8721GTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF8721GTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF8721GTRPBF reliable?
The price and inventory of IRF8721GTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8721GTRPBF is usually 5 days.
3.What payment methods are accepted for IRF8721GTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8721GTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF8721GTRPBF?
IRF8721GTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF8721GTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF8721GTRPBF?
For technical support, including IRF8721GTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8721GTRPBF requirements.
6.How does Aetrix verify that IRF8721GTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF8721GTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8721GTRPBF meets industry standards.
7.What is the process for return or replacement of IRF8721GTRPBF?
All IRF8721GTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8721GTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF8721GTRPBF part is unused and in its original packaging.
Return procedure for IRF8721GTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF8721GTRPBF Tags
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