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Infineon Technologies IRF8721PBF
- Part No.:
- IRF8721PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF8721PBF.pdf
- Description:
- MOSFET N-CH 30V 14A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,085
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Product details
Overview
IRF8721PBF from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for synchronous buck converter top-side switching. It delivers 8.5 mΩ RDS(on) at VGS = 10 V, 8.3 nC total gate charge, and 30 V VDSS, enabling high-efficiency notebook processor power delivery and isolated DC-DC conversion in networking systems.
For engineers reviewing the IRF8721PBF datasheet, IRF8721PBF pinout, IRF8721PBF application, or IRF8721PBF equivalent, key selection criteria include low gate charge for fast switching, RDS(on) stability across temperature, avalanche-rated ruggedness, and SO-8 thermal performance in high-density DC-DC layouts.
Technical Context
This MOSFET employs trench-gate silicon technology to minimize conduction and switching losses simultaneously. Its gate threshold voltage (1.35–2.35 V) enables robust 4.5 V drive compatibility, while low Qgd/Qgs2 ratio (3.2 nC / 1.0 nC) supports clean turn-off in high-dV/dt sync-buck environments.
The device integrates a fully characterized body diode with 14–21 ns reverse recovery time and 15–23 nC Qrr, critical for managing shoot-through risk and EMI in hard-switched topologies. Thermal resistance RθJA is rated at 50–55 °C/W, validated under JEDEC-standard SO-8 mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage for 12 V input rail applications with margin. |
| RDS(on) @ 10 V | 8.5 mΩ max - Enables ≤1.2 W conduction loss at 11 A continuous current in notebook VRMs. |
| Qg | 8.3 nC typ - Reduces gate driver power demand and switching transition time in 300–1000 kHz converters. |
| tr/tf | 11 ns / 7.0 ns - Supports clean edge control with minimal overlap loss when paired with matched low-side FETs. |
| EAS | 68 mJ - Withstands single-pulse unclamped inductive energy during startup/fault events in DC-DC stages. |
| RθJA | 50–55 °C/W - Defines thermal derating limit for SO-8 PCB layout with 1-in² 2-oz copper pad. |
| VGS(th) | 1.35–2.35 V - Ensures reliable turn-on with standard 3.3 V or 5 V gate drivers without overdrive. |
Pinout & Package
IRF8721PBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal conduction. The package measures 4.9 × 6.0 mm with 1.27 mm lead pitch and 1.75 mm height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–4, 6–8 (D) | Drain | Parallel-connected high-current output node; tied to PCB thermal pad for junction-to-board heat transfer. |
| 5 (G) | Gate | Control input with 1.8 Ω typical gate resistance; requires <10 Ω external series resistor for ringing suppression. |
| 7–8 (S) | Source | Power return path and reference for gate drive; shared with body diode cathode in high-side configuration. |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg/RDS(on) ratio | 0.98 nC/mΩ - Optimized trade-off for minimizing both switching and conduction loss in 4.5–10 V gate drive systems. |
| Fully characterized avalanche | 68 mJ EAS at TJ = 25°C - Eliminates need for external snubbers in non-isolated buck converters during load dump or OCP events. |
| Low gate impedance | 1.8 Ω RG typ - Reduces gate oscillation risk and simplifies driver selection for high-frequency operation. |
| Lead-free construction | RoHS-compliant matte tin plating - Meets IPC-J-STD-020 reflow profile requirements for Pb-free assembly. |
Applications
| Notebook CPU Voltage Regulator | Networking DC-DC Isolation Stage |
|---|---|
Use Scenario: High-current, multi-phase VRM supplying Intel Core i-series processors in ultrabooks. IC Role / Device Role / Timing Role: Top-side synchronous rectifier in 300–600 kHz buck stage, switching between input rail and phase inductor. Use Value: 8.5 mΩ RDS(on) and 8.3 nC Qg reduce combined losses by ≥12% versus legacy SO-8 MOSFETs at 11 A/1.0 V output. | Use Scenario: Primary-side switch in isolated forward or active-clamp forward converter powering 48 V backplane systems. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer to transformer primary winding during ON-time. Use Value: 30 V VDSS and 68 mJ EAS support safe operation under reflected output overvoltage and transformer leakage spikes. |
| Industrial Motor Control Gate Driver | USB-C PD Power Path Switch |
Use Scenario: Half-bridge high-side switch in compact BLDC gate driver modules for HVAC blowers. IC Role / Device Role / Timing Role: High-side power switch driven by bootstrap circuitry; body diode conducts freewheeling current during LO-phase. Use Value: 14–21 ns trr and 15–23 nC Qrr minimize cross-conduction loss and EMI during commutation transitions. | Use Scenario: Input protection and power-path selection switch in 20 V/5 A USB-C Power Delivery adapters. IC Role / Device Role / Timing Role: Load switch controlling connection between AC/DC front-end and PD controller + secondary side. Use Value: ±20 V VGS rating and 1.35–2.35 V VGS(th) ensure stable operation across wide input voltage and temperature ranges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 7.5 mΩ @ 10 V; Qg = 10.5 nC; SO-8 with enhanced thermal pad | Higher conduction efficiency but increased switching loss due to +26% Qg | Prefer when board-level thermal management allows higher gate drive power budget. |
| DMN3025LSD-13 | RDS(on) = 2.5 mΩ @ 10 V; Qg = 14.5 nC; dual-N in SO-8 | Lower RDS(on) but larger gate charge increases driver stress and EMI in high-frequency sync-buck. | Select only if dual-N integration reduces component count and layout area outweighs gate drive complexity. |
Compared with Si7852DP-T1-GE3 and DMN3025LSD-13, IRF8721PBF offers the best balance of low Qg and moderate RDS(on) for 300–600 kHz notebook VRMs where gate driver simplicity and thermal density are prioritized over absolute conduction loss minimization.
Availability
IRF8721PBF is available at Aetrix Electronics and suitable for notebook CPU voltage regulation, isolated DC-DC conversion in networking infrastructure, and industrial motor gate driver designs requiring stable component supply and long-term manufacturability.
Supply support for IRF8721PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF8721PBF belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in space-constrained computing and communications equipment.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The IRF8721PBF supports 11 A continuous drain current at TA = 70°C with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This assumes SO-8 mounting on a standard FR-4 PCB with 1-in² 2-oz copper pour per JEDEC Test Method JESD51-2.
Does the IRF8721PBF have a built-in body diode, and what are its recovery characteristics?
Yes, it integrates a monolithic N-channel MOSFET body diode with typical reverse recovery time of 14–21 ns and Qrr of 15–23 nC at IS = 11 A and dI/dt = 300 A/μs. These values are measured under standardized conditions per Figure 17 and are critical for predicting shoot-through loss in synchronous rectification.
Can IRF8721PBF be driven directly from a 3.3 V microcontroller GPIO?
No - its VGS(th) range (1.35–2.35 V) allows turn-on, but RDS(on) rises sharply below 4.5 V. At 3.3 V, RDS(on) exceeds 25 mΩ, doubling conduction loss. A dedicated gate driver or level-shifter is required for efficient operation.
What is the recommended PCB footprint and thermal pad layout for SO-8?
The datasheet specifies a JEDEC MS-012AA outline with 8× 0.72 mm × 1.78 mm solder pads. For thermal performance, a minimum 6.46 mm × 4.00 mm exposed copper pad connected via ≥6 thermal vias (0.3 mm diameter, 0.8 mm spacing) to internal ground planes is recommended per Infineon Application Note AN-1035.
IRF8721PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1040 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF8721PBF FAQ
1.How can I place an order for IRF8721PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF8721PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF8721PBF reliable?
The price and inventory of IRF8721PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8721PBF is usually 5 days.
3.What payment methods are accepted for IRF8721PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8721PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF8721PBF?
IRF8721PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF8721PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF8721PBF?
For technical support, including IRF8721PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8721PBF requirements.
6.How does Aetrix verify that IRF8721PBF is sourced from the original manufacturer or authorized distributors?
All IRF8721PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8721PBF meets industry standards.
7.What is the process for return or replacement of IRF8721PBF?
All IRF8721PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8721PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF8721PBF part is unused and in its original packaging.
Return procedure for IRF8721PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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