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Infineon Technologies IRF8734PBF

Part No.:
IRF8734PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixIRF8734PBF.pdf
Description:
MOSFET N-CH 30V 21A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,535

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Product details

Overview

IRF8734PBF from Infineon Technologies is a 30V, 21A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for synchronous rectification and high-efficiency DC-DC conversion. It delivers 2.9 mΩ RDS(on) at VGS = 10 V, 20 nC total gate charge, and 100% avalanche-tested robustness-used in notebook CPU VRMs and isolated telecom DC-DC converters.

For engineers reviewing the IRF8734PBF datasheet, IRF8734PBF pinout, IRF8734PBF application, or IRF8734PBF equivalent, key selection criteria include low RDS(on) at 4.5 V drive, fast switching (tr = 16 ns, tf = 8.0 ns), body diode Qrr = 25–38 nC, and SO-8 thermal performance (RθJA = 50 °C/W).

Technical Context

This MOSFET employs trench-gate silicon technology with fully characterized unclamped inductive switching (UIS) capability up to 1000 mJ at IAS = 17 A. Its gate threshold voltage (1.35–2.35 V) enables reliable 4.5 V logic-level drive while maintaining tight VGS(th) temperature coefficient (−6.5 mV/°C).

The device integrates a low-Qrr body diode (25–38 nC) and exhibits low Crss (241 pF) for reduced Miller-induced turn-off delay. Its SO-8 package supports dual-side cooling and achieves RθJL = 20 °C/W to drain lead-critical for high-current synchronous buck stages.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - maximum blocking voltage for 12 V input rails and 5 V output synchronous buck converters
RDS(on) max @ 10 V3.5 mΩ - ensures <15 mW conduction loss at 21 A DC, enabling >95% efficiency in high-current VRMs
Qg typ.20 nC - enables fast switching with moderate gate driver strength (e.g., IR3550), reducing switching losses
ID @ TA = 25°C21 A - continuous current rating suitable for CPU core power delivery up to ~60 W per phase
RθJA50 °C/W - defines thermal limit under still-air conditions; requires PCB copper area ≥1 in² for full-rated operation
Qrr25–38 nC - low reverse recovery charge minimizes shoot-through risk and EMI in synchronous rectifier mode
EAS1000 mJ - single-pulse avalanche energy rating validates ruggedness against transient overvoltage in DC-DC systems

Pinout & Package

IRF8734PBF uses the standard SO-8 surface-mount package (JEDEC MS-012AC), with exposed drain paddle thermally connected to pins 1–4 and 6–8. The package supports automated reflow and offers improved thermal resistance versus DPAK for space-constrained board layouts.

Pin/TerminalCircuit RoleDesign Meaning
1–4, 6–8Drain (D)Internally paralleled drain terminals tied to exposed paddle-primary current path and thermal conduction path to PCB
5Gate (G)Control terminal requiring ≤20 nC charge for full enhancement; sensitive to ESD (±20 V absolute max)
7–8Source (S)Power return node for channel current; also serves as reference for gate drive and body diode cathode

Key Features

FeatureDesign Value
Low RDS(on) at 4.5 V4.2 mΩ - enables direct drive from 5 V PWM controllers without level-shifting, reducing BOM count
Fully characterized UIS100% tested to 1000 mJ - eliminates need for external snubbers in hard-switched topologies
Lead-free constructionRoHS-compliant Pb-free plating and halogen-free mold compound - meets IPC/JEDEC J-STD-020 reflow requirements
Low Qgd/Qgs ratio6.9 nC / 7.5 nC ≈ 0.92 - improves controllability during Miller plateau and reduces risk of false turn-on
Body diode trr20–30 ns - fast recovery supports high-frequency (>500 kHz) synchronous rectification without excessive ringing

Applications

Notebook CPU Voltage RegulatorIsolated Telecom DC-DC Converter

Use Scenario: High-current, multi-phase buck converter supplying Intel/AMD mobile processors with dynamic load steps up to 100 A/µs.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in low-side position, replacing Schottky diodes to reduce conduction loss and improve light-load efficiency.

Use Value: 2.9 mΩ RDS(on) cuts conduction loss by >60% vs. 15 mΩ alternatives, directly extending battery runtime at 15–30 W loads.

Use Scenario: Secondary-side synchronous rectification in 48 V input, 12 V output isolated forward or LLC converters for enterprise switches/routers.

IC Role / Device Role / Timing Role: Active rectifier switch synchronized to primary-side timing, conducting during transformer reset interval.

Use Value: Low Qrr (25–38 nC) and fast trr (20–30 ns) suppress voltage overshoot and reduce EMI filter size in 300–600 kHz designs.

Industrial Motor Drive Half-BridgeUSB-C PD Power Delivery Module

Use Scenario: Low-voltage (≤24 V) half-bridge stage driving brushed DC or stepper motor windings with PWM frequencies up to 20 kHz.

IC Role / Device Role / Timing Role: High-side or low-side switching element, leveraging SO-8 footprint for compact gate driver integration.

Use Value: RθJL = 20 °C/W to drain lead allows direct thermal coupling to heatsink via PCB copper, sustaining 17 A pulsed current without derating.

Use Scenario: 20 V/5 A USB-C PD sink path where compact size and low thermal resistance are critical in portable adapters.

IC Role / Device Role / Timing Role: Input-side pass FET controlling VBUS connection, requiring low RDS(on) and robust short-circuit withstand.

Use Value: 100% avalanche-tested EAS = 1000 mJ ensures survival during hot-plug transients and cable fault events per USB-IF compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SiR872DP-T1-GE3RDS(on) = 2.7 mΩ @ 10 V; Qg = 22 nC; SO-8 with enhanced thermal padSlightly lower RDS(on) but higher gate charge increases driver loss at >1 MHz switchingPreferred for ultra-high-efficiency VRMs where <0.2 mΩ reduction justifies +10% gate loss
IPB80N04S4-02RDS(on) = 2.0 mΩ @ 10 V; TO-263 package; RθJA = 35 °C/WLarger footprint and different thermal path-requires redesign of layout and thermal interfaceOnly suitable when SO-8 replacement is not required and board space permits D2PAK mounting

Compared with SiR872DP-T1-GE3 and IPB80N04S4-02, IRF8734PBF balances low RDS(on), moderate Qg, and SO-8 manufacturability-making it optimal for cost-sensitive, space-constrained synchronous rectifier designs where thermal management relies on PCB copper rather than external heatsinks.

Availability

IRF8734PBF is available at Aetrix Electronics and suitable for notebook VRMs, telecom DC-DC converters, industrial motor drives, and USB-C PD modules requiring stable component supply across production lifecycles.

Supply support for IRF8734PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET Power MOSFET product line targets high-efficiency power conversion in computing, communications, and industrial systems-designed for minimal conduction and switching loss in synchronous rectifier and switching regulator topologies.

FAQ

Is IRF8734PBF suitable for 5 V gate drive in synchronous buck converters?

Yes. With VGS(th) ranging from 1.35 V to 2.35 V and RDS(on) = 4.2 mΩ at VGS = 4.5 V, it fully enhances using standard 5 V PWM controller outputs. Its low threshold spread ensures consistent turn-on across temperature and process variation without external level shifters.

What is the maximum recommended PCB copper area for SO-8 thermal relief?

For full 21 A continuous current rating at TA = 25°C, Infineon recommends ≥1.0 in² (645 mm²) of 2 oz copper connected to the drain paddle via ≥6 thermal vias (0.3 mm diameter). This achieves effective RθJA ≈ 35 °C/W, preventing junction exceedance beyond 150°C.

Does IRF8734PBF include integrated ESD protection on the gate?

No. The device has no built-in gate ESD protection diode. Gate oxide is rated for ±20 V absolute maximum VGS; therefore, external 12 V Zener clamps or RC snubbers are required in high-noise environments such as motor drive gate loops or hot-swap circuits.

Can IRF8734PBF replace IRF8734 in existing designs?

Yes-IRF8734PBF is the lead-free, RoHS-compliant version of IRF8734, with identical electrical specifications, pinout, and SO-8 mechanical outline. No layout or firmware changes are needed; only reflow profile adjustments may be required to meet Pb-free JEDEC J-STD-020 standards.

IRF8734PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
21A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
3.5mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:
2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3175 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

IRF8734PBF FAQ

1.How can I place an order for IRF8734PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF8734PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF8734PBF reliable?

The price and inventory of IRF8734PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8734PBF is usually 5 days.

3.What payment methods are accepted for IRF8734PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8734PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF8734PBF?

IRF8734PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF8734PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF8734PBF?

For technical support, including IRF8734PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8734PBF requirements.

6.How does Aetrix verify that IRF8734PBF is sourced from the original manufacturer or authorized distributors?

All IRF8734PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8734PBF meets industry standards.

7.What is the process for return or replacement of IRF8734PBF?

All IRF8734PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8734PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF8734PBF part is unused and in its original packaging.

Return procedure for IRF8734PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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