My Inquiry
My Account
Infineon Technologies IRF8788PBF
- Part No.:
- IRF8788PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF8788PBF.pdf
- Description:
- MOSFET N-CH 30V 24A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,744
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF8788PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for synchronous buck converter topologies. It delivers 2.8 mΩ RDS(on) at VGS = 10 V, 44 nC total gate charge, and 19 A continuous drain current at TA = 25°C - enabling high-efficiency notebook processor power delivery and isolated DC-DC synchronous rectification.
For engineers reviewing the IRF8788PBF datasheet, IRF8788PBF pinout, IRF8788PBF application, or IRF8788PBF equivalent, key selection criteria include low RDS(on) at 4.5 V, ultra-low gate impedance, fully characterized avalanche capability, and SO-8 thermal performance under high-frequency switching conditions.
Technical Context
This MOSFET employs trench-gated HEXFET silicon technology to minimize conduction and switching losses simultaneously. Its gate threshold voltage (1.35–2.35 V) and steep transconductance (95 S typical) support robust turn-on with 4.5 V logic-level drive, while its 0.54 Ω typical gate resistance enables fast, controlled edge rates.
The device integrates a low-VF body diode (0.75 V typical at 19 A) with 24 ns reverse recovery time and 33 nC Qrr, making it suitable for hard-switched synchronous rectification where diode conduction occurs during dead-time intervals.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - supports input rails up to 24 V in notebook VRMs and point-of-load converters |
| RDS(on) @ 10 V | 2.8 mΩ max - reduces I²R conduction loss in high-current CPU core rails |
| Qg | 44 nC typical - enables efficient 500 kHz–1 MHz switching with moderate gate driver strength |
| ID @ 25°C | 19 A continuous - sustains peak load currents in dual-phase notebook power stages |
| RθJA | 50 °C/W - defines thermal derating on standard 1-oz FR4 PCBs without heatsink |
| VGS(th) | 1.8 V typical - ensures reliable turn-on with 3.3 V or 5 V gate drivers |
| Ciss | 5720 pF - influences Miller effect and gate drive loop stability at high dV/dt |
Pinout & Package
SO-8 surface-mount package (JEDEC MS-012AA), 4.9 × 6.0 mm footprint, 1.75 mm height, with exposed drain pad for enhanced thermal conduction to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 8 | Drain (D) | High-current output node tied to internal die backside; electrically and thermally connected to exposed pad |
| 5 | Gate (G) | Control terminal requiring <44 nC charge to switch 19 A; sensitive to ESD (±20 V rating) |
| 6, 7 | Source (S) | Power return path and reference for gate drive; forms common node with body diode cathode |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5 V | 3.04 mΩ max - enables direct compatibility with 5 V PWM controllers without level-shifting |
| Fully characterized avalanche energy | 600 mJ single-pulse (IAS = 19 A) - supports unclamped inductive switching in synchronous rectifier failure modes |
| Low gate impedance | 0.54 Ω typical - minimizes gate ringing and simplifies RC snubber design in high-dV/dt environments |
| Lead-free and RoHS-compliant | Pb-free plating per JEDEC J-STD-020 - meets IPC/JEDEC reflow profile requirements for Pb-free assembly |
Applications
| Notebook CPU Voltage Regulator | Isolated DC-DC Secondary Side |
|---|---|
Use Scenario: Powers Intel Core i-series processors in ultrabook platforms with 1–2 phase VRMs operating at 300–1000 kHz. IC Role / Device Role / Timing Role: High-side synchronous MOSFET in buck converter; switches 19 A peak current with minimal conduction loss. Use Value: 2.8 mΩ RDS(on) cuts conduction loss by >35% vs. legacy 4.5 mΩ devices, improving full-load efficiency by ~1.2%. | Use Scenario: Used as secondary-side synchronous rectifier in 12 V–3.3 V isolated flyback or forward converters for telecom modules. IC Role / Device Role / Timing Role: Low-VF body diode replaces Schottky rectifier; gate driven by transformer-coupled or active timing controller. Use Value: 0.75 V VSD and 24 ns trr reduce reverse recovery loss and EMI vs. 0.5 A Schottky, enabling >92% efficiency at 20 A output. |
| Netcom Point-of-Load Converter | Industrial FPGA Core Supply |
Use Scenario: Delivers 12 V input to 1.2 V/20 A FPGA core rail in network interface cards with tight thermal constraints. IC Role / Device Role / Timing Role: Low-side switch in multiphase buck stage; leverages SO-8 thermal pad for PCB heat spreading. Use Value: 50 °C/W RθJA allows 19 A operation at 70°C ambient when using 2-in² 2-oz copper pour - avoids forced air cooling. | Use Scenario: Supplies configurable logic core voltage in programmable logic controllers with transient load steps up to 15 A/μs. IC Role / Device Role / Timing Role: High-efficiency switching element in adaptive voltage positioning (AVP) circuit with dynamic VOUT scaling. Use Value: 44 nC Qg and 14 nC Qgd enable clean 500 ns turn-off with minimal shoot-through risk during rapid load transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 2.5 mΩ @ 10 V; Qg = 47 nC; SO-8 with enhanced thermal pad | Slightly lower RDS(on) but higher gate charge increases driver loss at >1 MHz | Prefer for fixed-frequency 500 kHz designs prioritizing conduction loss over switching loss |
| IRL8726PBF | RDS(on) = 3.0 mΩ @ 10 V; Qg = 34 nC; same SO-8 footprint | Lower gate charge improves light-load efficiency but higher RDS(on) raises full-load temperature | Prefer for thermally constrained layouts where gate drive strength is limited |
Compared with Si7852DP and IRL8726PBF, the IRF8788PBF strikes a balanced trade-off between RDS(on) and Qg, delivering optimal system efficiency across 300–800 kHz notebook VRM operating points while maintaining robust avalanche ruggedness and SO-8 manufacturability.
Availability
IRF8788PBF is available at Aetrix Electronics and suitable for notebook CPU voltage regulation, isolated DC-DC synchronous rectification, and industrial FPGA core power supply applications requiring stable component supply and long-term production continuity.
Supply support for IRF8788PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF8788PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in portable computing and communications infrastructure.
FAQ
What is the maximum safe operating voltage for IRF8788PBF in continuous DC operation?
The absolute maximum drain-to-source voltage (VDSS) is 30 V, with recommended maximum continuous DC operating voltage of 24 V to maintain margin against transients and ensure long-term reliability. Exceeding 24 V risks avalanche breakdown under load, especially at elevated junction temperatures above 100°C.
Can IRF8788PBF be driven directly by a 3.3 V microcontroller GPIO?
No - its typical gate threshold voltage is 1.8 V, but full enhancement requires ≥4.5 V to achieve rated RDS(on). At 3.3 V, RDS(on) rises to ~6.5 mΩ, doubling conduction loss. A dedicated gate driver (e.g., TC4427) or level shifter is required for reliable 19 A switching.
Does IRF8788PBF require external gate resistors for stability?
Yes - a 5–10 Ω series gate resistor is recommended to dampen parasitic oscillation caused by PCB trace inductance interacting with Ciss (5720 pF) and the device's 0.54 Ω intrinsic gate resistance. Omitting it may cause gate ringing exceeding ±20 V, risking gate oxide damage.
How does the body diode performance impact synchronous rectifier use?
The integrated body diode has 0.75 V forward drop at 19 A and 24 ns reverse recovery time, enabling efficient freewheeling during dead-time. However, its Qrr of 33 nC must be managed via precise gate timing to avoid cross-conduction losses - unlike Schottky diodes, it cannot be used in asynchronous mode without penalty.
IRF8788PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.8mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 66 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5720 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF8788PBF FAQ
1.How can I place an order for IRF8788PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF8788PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF8788PBF reliable?
The price and inventory of IRF8788PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8788PBF is usually 5 days.
3.What payment methods are accepted for IRF8788PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8788PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF8788PBF?
IRF8788PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF8788PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF8788PBF?
For technical support, including IRF8788PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8788PBF requirements.
6.How does Aetrix verify that IRF8788PBF is sourced from the original manufacturer or authorized distributors?
All IRF8788PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8788PBF meets industry standards.
7.What is the process for return or replacement of IRF8788PBF?
All IRF8788PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8788PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF8788PBF part is unused and in its original packaging.
Return procedure for IRF8788PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF8788PBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
