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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF9204PBF

Name: IRF9204PBF
Brand: Infineon Technologies
SKU: IRF9204PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9204PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF9204PBF.pdf

Description:: MOSFET P-CH 40V 56A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:4,663

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Product details

Overview

IRF9204PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, rated for -40V V_DSS, 16 mΩ R_DS(on) at V_GS = -10V, and -74A continuous drain current at T_C = 25°C. It integrates a robust body diode and supports unclamped inductive switching with 143 mJ single-pulse avalanche energy, commonly used in DC-DC synchronous buck converters and high-side load switches.

For engineers reviewing the IRF9204PBF datasheet, IRF9204PBF pinout, IRF9204PBF application, or IRF9204PBF equivalent, key selection criteria include verified gate threshold voltage (-1.0 to -3.0 V), low on-resistance stability over temperature, body diode reverse recovery charge (377–566 nC), and thermal resistance R_θJC = 1.05 °C/W - all critical for high-efficiency power stage design and thermal margin validation.

Technical Context

This P-channel MOSFET operates as a high-side switch in offline and DC-DC power supplies, where gate drive is referenced to the source. Its negative V_GS(th) enables direct logic-level control when paired with appropriate level-shifting or complementary driver stages. The device features a low C_iss of 7676 pF and C_oss of 654 pF, supporting fast switching with controlled dv/dt.

Thermal performance is defined by R_θJC = 1.05 °C/W and R_θJA = 62 °C/W (free air), with junction temperature range from -55°C to +175°C. Avalanche capability is characterized per Fig. 12–15: E_AS = 143 mJ (tested), I_AR = -37 A, and repetitive avalanche validated up to 100% production test screening.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-40 V - Maximum blocking voltage before avalanche onset; defines safe operating range in high-side configurations.
R_DS(on)	16 mΩ max @ V_GS = -10V, T_J = 25°C - Directly determines conduction loss and thermal rise in continuous operation.
I_D (cont)	-74 A @ T_C = 25°C - Silicon-limited current rating; requires heatsinking to sustain full load without derating.
Q_g	149–224 nC - Total gate charge dictates driver strength requirement and switching transition time.
E_AS	143 mJ (tested) - Single-pulse avalanche energy capacity; enables robustness against inductive kickback in relay or motor drive circuits.
V_SD	-1.3 V max @ I_S = -37A - Forward voltage of integrated body diode; impacts efficiency in synchronous rectification or freewheeling paths.
R_θJC	1.05 °C/W - Junction-to-case thermal resistance; sets minimum heatsink interface requirement for thermal management.

Pinout & Package

IRF9204PBF uses the TO-220AB package: insulated tab, vertical lead orientation, and through-hole mounting. The case is electrically connected to the Drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives negative gate drive relative to source; threshold confirmed at -1.0 to -3.0 V; sensitive to ESD.
D (Drain)	High-side power node	Connected to package tab; must be isolated from heatsink unless electrically referenced to system ground or floating rail.
S (Source)	Reference node / return path	Serves as gate drive reference; carries full load current and body diode reverse recovery current during switching transitions.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	16 mΩ max ensures <1.2 W conduction loss at -37 A, reducing heatsink size in high-current DC-DC stages.
Enhanced avalanche ruggedness	100% production-tested 143 mJ E_AS enables reliable operation in unclamped inductive loads without external snubbers.
Optimized gate charge profile	Q_gd/Q_gs ratio of ~1.15 minimizes Miller-induced shoot-through risk in half-bridge topologies.
Integrated body diode	Low Q_rr (377–566 nC) and fast t_rr (51–77 ns) reduce switching losses in synchronous rectifier applications.

Applications

DC-DC Synchronous Buck Converter

Industrial Motor Drive H-Bridge

Use Scenario: High-efficiency 12 V input to 3.3/5 V output conversion in programmable logic controllers and industrial HMIs.

IC Role / Device Role: High-side P-channel switch replacing N-channel + driver; simplifies gate drive architecture.

Use Value: Eliminates need for bootstrap capacitor or level shifter, reducing BOM count and layout complexity while maintaining <15 mΩ effective on-resistance.

Use Scenario: Bidirectional 24 V motor control in valve actuators and conveyor modules with regenerative braking.

IC Role / Device Role: Upper-leg switch in H-bridge; conducts reverse current during PWM off-time via body diode.

Use Value: Confirmed Q_rr = 377–566 nC and t_rr = 51–77 ns enable clean commutation with <5% voltage overshoot under 100 A/μs di/dt.

Hot-Swap Power Sequencing

Telecom DC Power Distribution

Use Scenario: Inrush current limiting and fault isolation in redundant 48 V backplane power systems.

IC Role / Device Role: High-side load switch with precise V_GS(th) (-1.0 to -3.0 V) enabling soft-start via RC gate ramp.

Use Value: Gate threshold spread allows predictable turn-on timing across temperature; R_DS(on) stability ensures consistent current limiting accuracy.

Use Scenario: OR-ing function in dual-input 48 V telecom rectifiers feeding common bus.

IC Role / Device Role: Reverse-polarity protection and current steering element using body diode conduction path.

Use Value: Low V_SD = -1.3 V max minimizes forward drop penalty; TJ = -55°C to +175°C rating supports extended outdoor deployment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9310PBF	V_DSS = -30 V, R_DS(on) = 12 mΩ @ -10 V, lower avalanche rating (E_AS = 95 mJ)	Better conduction loss at ≤30 V rails; unsuitable for 40 V transient-tolerant designs	Select when system V_IN is strictly ≤28 V and thermal budget favors lower R_DS(on).
SiHP12N40D	V_DSS = -40 V, R_DS(on) = 140 mΩ @ -10 V, higher Q_g (110 nC), no production avalanche test data published	Higher voltage margin at same V_DSS; significantly slower switching due to higher gate charge	Prefer only if cost sensitivity outweighs efficiency and reliability requirements in non-critical loads.

Compared with IRF9204PBF, IRF9310PBF trades voltage headroom for lower conduction loss, while SiHP12N40D offers identical V_DSS but sacrifices switching speed and lacks documented avalanche validation - making IRF9204PBF the balanced choice for industrial-grade 40 V power switching with verified ruggedness.

Availability

IRF9204PBF is available at Aetrix Electronics and suitable for DC-DC synchronous buck converters, industrial motor drive H-bridges, hot-swap power sequencing, and telecom DC power distribution requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF9204PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.

The IRF9204PBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-reliability industrial power conversion where avalanche ruggedness, thermal stability, and gate drive simplicity are prioritized over ultra-high-frequency operation.

FAQ

Is IRF9204PBF suitable for surface-mount assembly?

No. The TO-220AB package is explicitly not recommended for surface-mount applications per Infineon's package note. It requires through-hole mounting with mechanical screw torque of 10 lbf·in (1.1 N·m) and a flat, greased heatsink interface for optimal thermal performance. Reflow or wave soldering risks thermal damage and voided warranty.

What is the maximum allowable gate-source voltage for IRF9204PBF?

The absolute maximum V_GS is ±20 V. Operation beyond this rating risks irreversible gate oxide breakdown. For reliable long-term use, gate drive should be limited to -12 V to -15 V during switching transients and clamped to -20 V with external Zener protection, especially in noisy industrial environments with inductive coupling.

Does IRF9204PBF have a specified SOA curve for linear-mode operation?

Yes. Figure 9 in the datasheet provides the Maximum Safe Operating Area (SOA) for DC, pulsed, and avalanche conditions. At T_C = 25°C, the device supports up to 60 A at 10 V V_DS in DC mode, with strict derating above 100 μs pulse width. Linear-mode use requires active current limiting and thermal monitoring to avoid secondary breakdown.

How is the body diode reverse recovery performance characterized for IRF9204PBF?

Reverse recovery is fully specified: t_rr = 51–77 ns and Q_rr = 377–566 nC at T_J = 25°C, I_F = -37 A, di/dt = 100 A/μs, and V_DD = -20 V. These values are measured per JEDEC standard JESD24-10 and reflect actual silicon behavior - not typical or guaranteed min/max - enabling accurate loss modeling in synchronous rectifier designs.

IRF9204PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 37A, 10V

Vgs(th) (Max) @ Id:: 3V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 224 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7676 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 143W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF9204PBF FAQ

1.How can I place an order for IRF9204PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9204PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9204PBF reliable?

The price and inventory of IRF9204PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9204PBF is usually 5 days.

3.What payment methods are accepted for IRF9204PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9204PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9204PBF?

IRF9204PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9204PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9204PBF?

For technical support, including IRF9204PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9204PBF requirements.

6.How does Aetrix verify that IRF9204PBF is sourced from the original manufacturer or authorized distributors?

All IRF9204PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9204PBF meets industry standards.

7.What is the process for return or replacement of IRF9204PBF?

All IRF9204PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9204PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9204PBF part is unused and in its original packaging.

Return procedure for IRF9204PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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