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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF9310PBF

Name: IRF9310PBF
Brand: Infineon Technologies
SKU: IRF9310PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9310PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF9310PBF.pdf

Description:: MOSFET P-CH 30V 20A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF9310PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -30 V V_DS, -20 A continuous drain current at 25°C, and 4.6 mΩ R_DS(on) at V_GS = -10 V. It integrates a low-loss body diode and supports unclamped inductive switching with 630 mJ single-pulse avalanche energy, commonly used in DC-DC synchronous buck converters and high-side load switches.

For engineers reviewing the IRF9310PBF datasheet, IRF9310PBF pinout, IRF9310PBF application, or IRF9310PBF equivalent, key selection criteria include verified R_DS(on) temperature stability, gate charge (Q_g = 110 nC), SO-8 thermal performance (R_θJA = 50 °C/W), and body diode reverse recovery (Q_rr = 12–18 nC) - all critical for high-efficiency power stage design.

Technical Context

This device operates as a voltage-controlled, normally-off P-channel switch with gate threshold voltage (V_GS(th)) ranging from -1.3 V to -2.4 V at 25°C and a negative temperature coefficient of -5.8 mV/°C. Its low R_DS(on) enables high conduction efficiency in high-current, low-voltage rails such as 3.3 V or 5 V systems.

The SO-8 package provides dual-sided thermal dissipation via exposed drain pad and supports surface-mount reflow. Dynamic parameters - including t_d(on) = 25 ns, t_r = 47 ns, Q_gd = 28 nC, and C_iss = 5250 pF - are specified under standardized test conditions (V_DS = -15 V, V_GS = -4.5 V, I_D = -16 A), enabling accurate gate driver sizing and EMI estimation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage for 3.3 V/5 V logic-level systems with safety margin against transients.
R_DS(on) max @ V_GS = -10 V	4.6 mΩ - Enables ≤0.92 W conduction loss at -20 A, critical for thermally constrained PCB layouts.
I_D continuous @ T_A = 25°C	-20 A - Supports high-current loads without external heatsinking when mounted on 1-inch² copper board.
Q_g total	110 nC - Determines gate driver current requirement (e.g., ≥5.5 A peak for 20 ns rise time).
E_AS single-pulse	630 mJ - Allows robust operation in unclamped inductive switching (e.g., motor drive freewheeling).
Q_rr body diode	12–18 nC - Directly impacts switching loss and EMI in synchronous rectification topologies.
R_θJA	50 °C/W - Defines junction-to-ambient thermal rise under standard JEDEC test board conditions.

Pinout & Package

IRF9310PBF uses the industry-standard SO-8 surface-mount package with exposed drain pad (pin 8) for enhanced thermal conduction. Pin 1 is gate (G), pin 2 is source (S), pin 3 is source (S), pin 4 is source (S), pin 5 is source (S), pin 6 is drain (D), pin 7 is drain (D), and pin 8 is drain (D). The package complies with EIA-481/EIA-541 standards and is RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; requires -10 V to fully enhance; input capacitance C_iss = 5250 pF affects driver sizing.
2,3,4,5	Source (S)	Common source connection; four parallel pins reduce bond-wire inductance and improve current sharing.
6,7,8	Drain (D)	Power output node; pins 6/7/8 and exposed pad form low-inductance, high-current drain path to PCB ground plane.

Key Features

Feature	Design Value
Low R_DS(on) at logic-level drive	4.6 mΩ @ V_GS = -10 V enables efficient switching in 3.3 V–5 V controller-based designs without level-shifting.
Integrated body diode with low Q_rr	12–18 nC reverse recovery charge reduces turn-on loss and EMI in synchronous rectifier applications.
High avalanche energy rating	630 mJ single-pulse capability allows reliable operation during inductive load transients without snubbers.
SO-8 thermal performance	R_θJA = 50 °C/W on JEDEC standard board supports >15 W continuous dissipation with minimal footprint.
RoHS-compliant construction	Lead-free, halogen-free, bromide-free packaging meets global environmental compliance requirements for industrial and consumer use.

Applications

DC-DC Synchronous Buck Converter

High-Side Load Switch

Use Scenario: Used as high-side switch in 5 V input → 3.3 V output buck converter with 10 A load.

IC Role / Device Role / Timing Role: P-channel high-side MOSFET controlled by PWM signal; conducts during on-time, blocks during off-time.

Use Value: Low R_DS(on) minimizes conduction loss; fast Q_gd/C_iss enables <100 ns switching transitions at 500 kHz.

Use Scenario: Enables/disables 3.3 V rail to FPGA core logic with inrush current limiting.

IC Role / Device Role / Timing Role: High-side power switch with gate driven by microcontroller GPIO through level shifter.

Use Value: Verified -1.3 V V_GS(th) ensures full enhancement at 3.3 V logic; SO-8 layout simplifies PCB routing.

Motor Driver Half-Bridge

Hot-Swap Controller

Use Scenario: Upper switch in H-bridge driving 12 V brushed DC motor with 8 A stall current.

IC Role / Device Role / Timing Role: High-side switching element; body diode handles freewheeling current during PWM off-cycle.

Use Value: 630 mJ E_AS withstands inductive kickback; Q_rr <18 nC limits shoot-through risk during commutation.

Use Scenario: Controls hot-plug insertion of 5 V peripheral board into backplane with soft-start.

IC Role / Device Role / Timing Role: Inrush-limiting high-side switch with gate slew-rate control via RC network.

Use Value: Low gate charge (110 nC) allows precise dV/dt control; SO-8 thermal margin prevents thermal shutdown during ramp-up.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3 (Vishay)	R_DS(on) = 5.5 mΩ @ -10 V; Q_g = 90 nC; SO-8; lower E_AS (420 mJ)	Lower gate charge reduces driver stress but reduced avalanche margin limits use in unclamped inductive loads.	Preferred where gate drive strength is limited and inductive energy is clamped externally.
IPB90P03P4L-04 (Infineon)	R_DS(on) = 4.0 mΩ @ -10 V; TO-263 package; higher I_D (90 A); not SO-8 compatible	Superior conduction loss and thermal capacity, but requires PCB redesign due to larger footprint and different mounting.	Selected when thermal headroom is insufficient in SO-8 and board space permits TO-263 layout.

Compared with Si7157DP-T1-GE3 and IPB90P03P4L-04, IRF9310PBF uniquely balances SO-8 compatibility, 630 mJ avalanche robustness, and 4.6 mΩ R_DS(on) - making it optimal for space-constrained, high-reliability 3.3–5 V power stages where package interchangeability matters.

Availability

IRF9310PBF is available at Aetrix Electronics and suitable for DC-DC converters, high-side load switches, motor drivers, and hot-swap controllers requiring stable component supply and long-term industrial availability.

Supply support for IRF9310PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with headquarters in Munich, Germany.

The IRF9310PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in low-voltage DC power systems - especially where SO-8 integration, avalanche ruggedness, and logic-level drive are essential.

FAQ

What is the maximum safe operating temperature for IRF9310PBF?

The IRF9310PBF has a maximum junction temperature (T_J) of +150°C and storage temperature range of -55°C to +150°C. Under continuous operation at 25°C ambient with 1-inch² copper board, its thermal resistance (R_θJA) is 50°C/W, allowing up to ~15 W power dissipation before reaching T_J limit. Derating is required above 70°C ambient per the linear derating factor of 2.5 W/°C.

Can IRF9310PBF be driven directly by a 3.3 V microcontroller GPIO?

No - IRF9310PBF has a gate threshold voltage (V_GS(th)) of -1.3 V to -2.4 V, but full enhancement (to achieve 4.6 mΩ R_DS(on)) requires V_GS ≤ -10 V. A 3.3 V GPIO cannot provide sufficient negative gate drive; a dedicated level-shifting circuit or gate driver IC (e.g., TC4427) is required to generate the necessary -10 V relative to source.

Does IRF9310PBF have an integrated Schottky diode?

No - IRF9310PBF contains a monolithic parasitic body diode formed by the MOSFET's p-n junction, not a discrete Schottky diode. This intrinsic diode has V_SD ≈ -1.2 V at -2.5 A and reverse recovery charge Q_rr = 12–18 nC, which is typical for planar MOSFETs but slower than Schottky alternatives. It is suitable for freewheeling but not ultra-high-frequency synchronous rectification.

Is IRF9310PBF suitable for automotive applications?

IRF9310PBF is qualified to consumer-grade reliability standards (JEDEC JESD47F) and MSL1 moisture sensitivity, but it is not AEC-Q101 qualified. While functionally capable in 12 V automotive subsystems (e.g., infotainment power rails), it lacks automotive-specific qualification for temperature cycling, humidity, and lifetime testing - making it appropriate for industrial and commercial use, not safety-critical automotive ECUs.

IRF9310PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 165 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5250 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF9310PBF FAQ

1.How can I place an order for IRF9310PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9310PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9310PBF reliable?

The price and inventory of IRF9310PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9310PBF is usually 5 days.

3.What payment methods are accepted for IRF9310PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9310PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9310PBF?

IRF9310PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9310PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9310PBF?

For technical support, including IRF9310PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9310PBF requirements.

6.How does Aetrix verify that IRF9310PBF is sourced from the original manufacturer or authorized distributors?

All IRF9310PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9310PBF meets industry standards.

7.What is the process for return or replacement of IRF9310PBF?

All IRF9310PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9310PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9310PBF part is unused and in its original packaging.

Return procedure for IRF9310PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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