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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF9317PBF

Name: IRF9317PBF
Brand: Infineon Technologies
SKU: IRF9317PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9317PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF9317PBF.pdf

Description:: MOSFET P-CH 30V 16A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF9317PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -30 V V_DS, 6.6 mΩ R_DS(on) at -10 V V_GS, -16 A continuous drain current at 25°C, and optimized for high-efficiency DC-DC synchronous buck converters in notebook power supplies.

For engineers reviewing the IRF9317PBF datasheet, IRF9317PBF pinout, IRF9317PBF application, or IRF9317PBF equivalent, key selection criteria include verified gate charge (31 nC typical), body diode recovery performance (Q_rr = 30–45 nC), thermal resistance (R_θJA = 50 °C/W on 1-in² copper), and SO-8 footprint compatibility with multi-vendor layout reuse.

Technical Context

This device operates as a low-side synchronous rectifier switch in dual-MOSFET half-bridge configurations, leveraging its fast turn-off delay (t_d(off) = 160 ns) and low Q_gd/Q_g ratio (14/31 nC) to minimize shoot-through risk and switching losses. Its gate threshold voltage (-1.3 to -2.4 V) ensures robust noise immunity in 3.3 V or 5 V gate-drive systems.

The integrated body diode exhibits 33–50 ns reverse recovery time (t_rr) and -1.2 V forward voltage (V_SD) at -2.5 A, enabling efficient freewheeling without external Schottky supplementation in compact 12 V input designs. Thermal design relies on validated junction-to-ambient resistance under JEDEC-standard PCB mounting conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage for 12 V rail applications with 2.5× safety margin
R_DS(on) @ -10 V	6.6 mΩ max - Enables ≤1 W conduction loss at -16 A continuous load
Q_g	31 nC typical - Supports 500 kHz+ switching with <1 W gate drive power at 5 V
t_rr	33–50 ns - Limits diode recovery-induced voltage spikes in synchronous rectification
R_θJA	50 °C/W - Predictable junction temperature rise on standard 1-in² FR4 copper pour
I_D @ 70°C	-13 A - Derated current rating for sustained operation in thermally constrained enclosures
V_GS(th)	-1.3 to -2.4 V - Ensures full enhancement with 3.3 V logic-level gate drivers

Pinout & Package

IRF9317PBF uses an industry-standard SO-8 (MS-012AA) surface-mount package with exposed drain pad for thermal enhancement. Pin 1 is gate (G), pins 2–5 are source (S), and pins 6–8 are drain (D). The package supports JEDEC-compliant reflow and meets MSL1 moisture sensitivity requirements.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate control terminal	Accepts negative V_GS to modulate channel; requires 14 Ω gate resistor for optimal EMI-controlled switching
S (Pins 2, 3, 4, 5)	Source node / return path	Four parallel pins reduce source inductance and improve current sharing in high-di/dt operation
D (Pins 6, 7, 8)	Drain output / power path	Three parallel drain pins plus exposed pad provide low-inductance, high-current connection to ground plane

Key Features

Feature	Design Value
P-channel logic-level operation	Full enhancement at -4.5 V V_GS, compatible with standard 5 V microcontroller GPIOs
Low Q_gd/Q_g ratio	14/31 nC - Reduces Miller plateau duration and improves hard-switching robustness
Optimized body diode	30–45 nC Q_rr - Minimizes reverse recovery losses in synchronous rectifier mode
Thermally enhanced SO-8	Exposed drain pad - Lowers R_θJL to 20 °C/W for direct PCB heat sinking
RoHS-compliant & halogen-free	No lead, bromide, or halogen - Meets IPC-1752A material declaration and EU ELV requirements

Applications

High-Efficiency Notebook DC-DC Converters

USB-C PD 20 V Input Buck Regulators

Use Scenario: Dual-phase 5 V/3 A synchronous buck converter in ultrabook mainboard VRM.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss.

Use Value: Achieves >94% efficiency at full load by cutting I²R loss vs. 0.4 V diode drop, enabled by 6.6 mΩ R_DS(on).

Use Scenario: Single-stage 20 V to 5 V conversion in portable USB-C power adapter.

IC Role / Device Role: Secondary-side switch in isolated flyback-derived buck topology.

Use Value: Enables 500 kHz operation with <100 ns t_f, reducing output filter size while maintaining <15 mV ripple.

Industrial 24 V DC Power Distribution

Automotive Body Control Module (BCM) Loads

Use Scenario: Hot-swap protection and load switching for 24 V PLC I/O modules.

IC Role / Device Role: High-side load switch controlled via optocoupled gate driver.

Use Value: Withstands 1000× surge cycles up to -130 A (I_AS) due to rugged avalanche-rated construction.

Use Scenario: Reverse-polarity protection and load switching for 12 V BCM lighting circuits.

IC Role / Device Role: P-channel high-side switch with integrated overtemperature shutdown.

Use Value: Operates reliably across -40°C to +125°C ambient using -2.4 V V_GS(th) margin and 150°C T_J(max).

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 7.5 mΩ @ -10 V; Q_g = 28 nC; SO-8 with same pinout	Slightly higher conduction loss but lower gate charge enables faster switching in 1 MHz designs	Prefer when gate drive strength is limited and switching frequency exceeds 800 kHz
IRF7420PBF	R_DS(on) = 5.8 mΩ @ -10 V; Q_g = 42 nC; SO-8, higher current rating (-22 A)	Lower R_DS(on) reduces conduction loss but higher Q_g increases gate drive demand	Prefer for high-current (>18 A) applications where thermal headroom exists and gate drive capability is adequate

Compared with Si7157DP-T1-GE3, IRF9317PBF offers lower Q_g-to-R_DS(on) ratio for better FOM in mid-frequency buck stages; versus IRF7420PBF, it trades peak current capability for tighter gate charge control and proven reliability in volume notebook deployments.

Availability

IRF9317PBF is available at Aetrix Electronics and suitable for high-volume notebook power supplies, USB-C PD adapters, industrial 24 V distribution units, and automotive BCM modules requiring stable component supply with consistent SO-8 footprint and thermal performance.

Supply support for IRF9317PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and maintains legacy HEXFET® MOSFET product lines with full technical documentation, qualification data, and long-term supply commitment.

The IRF9317PBF belongs to the logic-level P-channel HEXFET® family designed specifically for high-efficiency synchronous rectification in space-constrained DC-DC converters where gate drive voltage and thermal dissipation are critical constraints.

FAQ

What is the maximum safe operating area (SOA) for IRF9317PBF at 100°C case temperature?

At T_C = 100°C, the SOA curve (Fig. 8) limits continuous operation to ≤8 A at -10 V V_DS, or ≤4 A at -20 V V_DS. Pulse operation allows up to -13 A for ≤10 ms with duty cycle ≤2%, provided peak junction temperature remains below 150°C per thermal simulation using R_θJA = 50 °C/W.

Does IRF9317PBF require a gate resistor, and what value is recommended?

Yes - a 6.8 Ω gate resistor is specified in Fig. 19a for unclamped inductive switching tests. For production use, 10–15 Ω is recommended to balance EMI suppression and switching speed; values below 5 Ω increase ringing risk due to 14 Ω intrinsic gate resistance and PCB trace inductance.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

With t_rr = 33–50 ns and Q_rr = 30–45 nC, the integrated body diode delivers lower reverse recovery loss than 40 V Schottky diodes (typically Q_rr > 60 nC) at -2.5 A, enabling higher efficiency without added component count - verified in 500 kHz buck converters per Application Note AN-1001.

Is IRF9317PBF suitable for linear regulator applications?

No - it is not characterized for linear-mode operation. The Safe Operating Area (SOA) graph shows resistive-load limitation above 10 V V_DS, and no R_DS(on) derating curves exist for extended linear bias. Use only in switched-mode topologies where V_DS transitions rapidly between near-zero and blocking states.

IRF9317PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.6mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 92 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2820 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF9317PBF FAQ

1.How can I place an order for IRF9317PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9317PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9317PBF reliable?

The price and inventory of IRF9317PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9317PBF is usually 5 days.

3.What payment methods are accepted for IRF9317PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9317PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9317PBF?

IRF9317PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9317PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9317PBF?

For technical support, including IRF9317PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9317PBF requirements.

6.How does Aetrix verify that IRF9317PBF is sourced from the original manufacturer or authorized distributors?

All IRF9317PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9317PBF meets industry standards.

7.What is the process for return or replacement of IRF9317PBF?

All IRF9317PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9317PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9317PBF part is unused and in its original packaging.

Return procedure for IRF9317PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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