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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF9321PBF

Name: IRF9321PBF
Brand: Infineon Technologies
SKU: IRF9321PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9321PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF9321PBF.pdf

Description:: MOSFET P-CH 30V 15A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF9321PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET power MOSFET in SO-8 package, rated for -30 V V_DS, 7.2 mΩ R_DS(on) at V_GS = -10 V, and -15 A continuous drain current at 25°C. It integrates a low-loss body diode and supports high-efficiency synchronous buck, load switch, and reverse polarity protection circuits in DC/DC converters.

For engineers reviewing the IRF9321PBF datasheet, IRF9321PBF pinout, IRF9321PBF application, or IRF9321PBF equivalent, key selection criteria include verified R_DS(on) at -4.5 V (-11.2 mΩ), gate charge (34 nC typical), avalanche energy rating (1400 mJ), thermal resistance (R_θJA = 50 °C/W), and SO-8 footprint compatibility with multi-vendor designs.

Technical Context

This device operates as a logic-level-compatible P-channel switch optimized for low-voltage DC systems. Its gate threshold voltage range (-1.3 V to -2.4 V) enables reliable turn-on with standard 3.3 V or 5 V controllers, while its low Q_g (34 nC) and fast switching (t_r = 79 ns, t_f = 145 ns) reduce conduction and switching losses in high-frequency PWM applications.

The integrated body diode exhibits V_SD = -1.2 V at -2.5 A and t_rr = 38–57 ns, supporting efficient freewheeling in synchronous rectification. Thermal design is aided by R_θJL = 20 °C/W and validated SO-8 mounting on 1-inch² copper board per JEDEC JESD51-3.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage for 24 V rail protection and 12 V automotive subsystems
R_DS(on) @ V_GS = -10 V	7.2 mΩ max - Enables ≤1.1 W conduction loss at -15 A, critical for thermally constrained PCB layouts
R_DS(on) @ V_GS = -4.5 V	11.2 mΩ max - Confirmed operation with 3.3 V GPIO or low-voltage PMIC drivers without level-shifting
Q_g	34 nC typical - Supports <500 kHz switching with minimal gate drive power in compact DC/DC stages
E_AS	1400 mJ - Withstands unclamped inductive energy in motor control or relay driving without external snubbers
R_θJA	50 °C/W - Validated on 1-inch² copper board; enables 1.6 W dissipation before reaching 150°C junction limit
t_r/t_f	79 ns / 145 ns - Reduces switching transition time, lowering overlap loss in synchronous buck topologies

Pinout & Package

IRF9321PBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AC), with 1.27 mm pitch, 5.0 mm × 6.0 mm body, and exposed drain pad for thermal enhancement. Pin 1 is marked with a dot or notch; pins are numbered counterclockwise from top-left when viewed from component side.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 8	Drain (D)	Common high-side connection point; electrically tied to exposed pad for low-inductance, high-current return path
6	Source (S)	Reference node for gate drive and load return; connects to system ground or negative rail in high-side switch configuration
7	Gate (G)	Control input requiring <±20 V rating; sensitive to ESD; requires series resistor (6.8 Ω typical) to damp ringing

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = -1.3 to -2.4 V - Ensures full enhancement with 3.3 V microcontroller outputs without gate driver IC
Low R_DS(on) at -4.5 V	11.2 mΩ max - Delivers >92% efficiency in 5 V input buck converters at 10 A output
Robust avalanche capability	E_AS = 1400 mJ - Eliminates need for external clamping diodes in inductive load switching
Fast body diode recovery	t_rr = 38–57 ns - Minimizes reverse recovery loss and EMI in synchronous rectifier mode
RoHS-compliant packaging	Lead-free, halogen-free SO-8 - Meets IPC-J-STD-020D MSL1 moisture sensitivity for standard reflow assembly

Applications

High-Side Load Switch

Synchronous Buck Converter

Use Scenario: Power sequencing for FPGA I/O banks or USB peripheral ports requiring controlled inrush current and reverse-polarity protection.

IC Role / Device Role: High-side P-channel switch controlling 3.3 V or 5 V supply rail with active gate control.

Use Value: R_DS(on) ≤11.2 mΩ at -4.5 V ensures <500 mV drop at 5 A, enabling precise voltage regulation without external LDO.

Use Scenario: Secondary-side synchronous rectification in isolated 12 V → 3.3 V DC/DC converters for telecom base stations.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss.

Use Value: Body diode V_SD = -1.2 V and t_rr ≤57 ns cut reverse recovery loss by >60% versus 40 V Schottky, improving efficiency by 1.8% at full load.

Reverse Polarity Protection

Motor Driver Half-Bridge

Use Scenario: Input protection for industrial sensors or battery-powered instrumentation exposed to accidental reverse battery connection.

IC Role / Device Role: In-line P-channel MOSFET placed between input connector and system ground.

Use Value: -30 V V_DS rating and -15 A ID withstand 24 V automotive transients; R_DS(on) adds <100 mV drop during normal operation.

Use Scenario: High-side switch in brushed DC motor H-bridge for robotics or actuator control.

IC Role / Device Role: Upper-leg P-channel switch enabling bidirectional motor control with bootstrap-free gate drive.

Use Value: Gate threshold compatible with 5 V logic allows direct MCU GPIO control; E_AS rating handles motor back-EMF spikes up to 1400 mJ.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7851DP-T1-GE3	R_DS(on) = 8.5 mΩ @ -10 V; Q_g = 29 nC; SO-8 package	Lower gate charge improves switching efficiency above 1 MHz but higher R_DS(on) increases conduction loss at >12 A	Select for high-frequency (>1 MHz) DC/DC where gate drive loss dominates
DMG2305UVT-7	R_DS(on) = 45 mΩ @ -4.5 V; smaller TSOP-6 package; lower cost	Limited to ≤4 A loads due to higher on-resistance and thermal resistance (R_θJA = 110 °C/W)	Select for space-constrained, low-power (<2 W) load switches where SO-8 footprint is not required

Compared with Si7851DP-T1-GE3 and DMG2305UVT-7, IRF9321PBF delivers optimal balance of low R_DS(on) at both -10 V and -4.5 V, robust avalanche margin, and proven SO-8 thermal performance-making it preferred for 5–15 A industrial power rails where reliability under transient stress is critical.

Availability

IRF9321PBF is available at Aetrix Electronics and suitable for high-side load switching, synchronous buck converter rectification, reverse polarity protection, and motor driver half-bridge applications requiring stable component supply and long-term industrial availability.

Supply support for IRF9321PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive electronics, and industrial control solutions with over 30 years of MOSFET innovation.

The IRF9321PBF belongs to Infineon's HEXFET® P-channel power MOSFET product line, engineered specifically for high-efficiency, low-voltage DC power conversion and protection in industrial, computing, and telecom infrastructure.

FAQ

What is the maximum safe operating temperature for IRF9321PBF?

The IRF9321PBF has a specified junction temperature range of -55°C to +150°C. Its absolute maximum rating assumes proper PCB thermal design: when mounted on a 1-inch² copper area, it sustains 1.6 W continuous power dissipation before reaching 150°C. Derating begins at 20 mW/°C above 70°C ambient, per the linear derating factor of 0.02 W/°C.

Does IRF9321PBF require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to suppress oscillation and control dV/dt during switching. The datasheet recommends 6.8 Ω for unclamped inductive testing. For most 100–500 kHz applications, 4.7 Ω to 10 Ω provides optimal trade-off between switching speed and EMI suppression; values below 3.3 Ω risk gate ringing, especially with long PCB traces.

Can IRF9321PBF be used in parallel configurations?

Yes, but only with careful layout and gate drive matching. Its positive R_DS(on) temperature coefficient (0.021 V/°C) enables inherent current sharing. To ensure balanced operation, use identical gate resistors, symmetrical PCB routing, shared source inductance minimization, and thermal coupling via common copper pour. Parallel operation beyond two devices requires individual gate resistors and Kelvin-source connections.

Is the body diode in IRF9321PBF suitable for synchronous rectification?

Yes-the integral body diode is characterized for synchronous rectification: V_SD = -1.2 V at -2.5 A and t_rr = 38–57 ns at di/dt = 100 A/µs. Its low reverse recovery charge (Q_rr = 24–36 nC) and soft recovery behavior minimize voltage overshoot and EMI, making it viable for 300–600 kHz synchronous buck secondaries without external Schottky replacement.

IRF9321PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.2mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 98 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2590 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF9321PBF FAQ

1.How can I place an order for IRF9321PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9321PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9321PBF reliable?

The price and inventory of IRF9321PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9321PBF is usually 5 days.

3.What payment methods are accepted for IRF9321PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9321PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9321PBF?

IRF9321PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9321PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9321PBF?

For technical support, including IRF9321PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9321PBF requirements.

6.How does Aetrix verify that IRF9321PBF is sourced from the original manufacturer or authorized distributors?

All IRF9321PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9321PBF meets industry standards.

7.What is the process for return or replacement of IRF9321PBF?

All IRF9321PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9321PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9321PBF part is unused and in its original packaging.

Return procedure for IRF9321PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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