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Infineon Technologies IRF9328PBF
- Part No.:
- IRF9328PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF9328PBF.pdf
- Description:
- MOSFET P-CH 30V 12A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,286
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Product details
Overview
IRF9328PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -30 V VDS, 11.9 mΩ RDS(on) at -10 V VGS, -12 A continuous drain current at 25°C, and optimized for synchronous buck converter high-side switching in DC-DC power supplies.
For engineers reviewing the IRF9328PBF datasheet, IRF9328PBF pinout, IRF9328PBF application, or IRF9328PBF equivalent, key selection criteria include verified gate threshold voltage (-1.3 to -2.4 V), body diode reverse recovery charge (35–53 nC), avalanche energy rating (up to 500 mJ), and SO-8 thermal performance under pulsed load conditions.
Technical Context
This device operates as a logic-level-compatible P-channel switch with negative gate drive, enabling direct interface with standard CMOS controllers without level-shifting. Its low RDS(on) and 18 nC total gate charge support high-frequency switching up to 1 MHz in point-of-load converters.
The integrated body diode exhibits 51–76 ns reverse recovery time and -1.2 V forward voltage at -2.5 A, making it suitable for freewheeling paths where controlled reverse conduction is required-e.g., in H-bridge motor drivers with regenerative braking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage in high-side configuration with 20% derating margin for 24 V rail systems |
| RDS(on) @ VGS = -10 V | 11.9 mΩ - Enables ≤1.4 W conduction loss at -12 A, critical for thermally constrained PCB layouts |
| RDS(on) @ VGS = -4.5 V | 19.7 mΩ - Confirmed operation with 3.3 V logic-level gate drive, supporting low-voltage controller compatibility |
| Qg (typ.) | 18 nC - Determines gate driver current requirement (~1.8 mA avg. at 100 kHz, 10 V swing) |
| ID @ TA = 25°C | -12 A - Continuous current capability with SO-8 copper pad heatsinking per JEDEC 51-3 |
| EAS | 500 mJ - Single-pulse avalanche energy rating supports unclamped inductive turn-off in motor control |
| VSD | -1.2 V - Body diode forward voltage at -2.5 A, defining conduction loss during synchronous rectification dead-time |
Pinout & Package
IRF9328PBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AC), with 1.27 mm pitch, 4.9 mm × 6.0 mm footprint, and exposed drain pad for thermal enhancement. Pin 1 is marked by notch or dot; leads are RoHS-compliant, lead-free, and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Accepts negative VGS to modulate channel; requires <1.8 mA drive for 100 ns switching |
| D (Drain) | High-side switched output | Connected to input rail; electrically tied to exposed thermal pad for heat dissipation |
| S (Source) | Reference node / return path | Bias point for gate drive; source of body diode anode in freewheeling mode |
| Pins 4–8 | Drain paralleling terminals | Internally connected to Drain; used collectively to reduce package inductance and improve current sharing |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced down to -4.5 V VGS, eliminating need for gate driver ICs in 3.3 V microcontroller systems |
| Low gate charge | 18 nC Qg reduces switching losses and EMI in 500 kHz–1 MHz DC-DC converters |
| Enhanced avalanche ruggedness | Rated for 500 mJ single-pulse avalanche energy, enabling robust operation in inductive load switching |
| Optimized body diode | 35–53 nC Qrr and 51–76 ns trr minimize shoot-through risk and reverse recovery loss in synchronous rectification |
Applications
| DC-DC Synchronous Buck Converter | Industrial Motor Control H-Bridge |
|---|---|
Use Scenario: 12 V input to 3.3 V/5 V point-of-load regulation in programmable logic controllers. IC Role / Device Role / Timing Role: High-side P-channel switch controlling duty cycle; body diode provides freewheeling path during low-side conduction. Use Value: 11.9 mΩ RDS(on) limits conduction loss to <1.7 W at full load, reducing heatsink requirements on compact PCBs. | Use Scenario: Bidirectional 24 V brushed DC motor drive with regenerative braking in factory automation. IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge; body diode conducts reverse current during braking phase. Use Value: 500 mJ EAS rating withstands inductive kickback without clamping circuitry, simplifying board layout. |
| Hot-Swap Power Sequencing | Telecom Line Card Protection |
Use Scenario: Inrush current limiting and fault isolation in redundant 48 V backplane power modules. IC Role / Device Role / Timing Role: Series pass element controlled by external current-sense amplifier and comparator. Use Value: -2.4 V maximum VGS(th) ensures reliable turn-on with precision gate biasing, preventing false trips during brown-out. | Use Scenario: Overcurrent and short-circuit protection for Ethernet-powered (PoE) line cards operating at 57 V. IC Role / Device Role / Timing Role: Load switch isolating downstream circuitry during fault detection events. Use Value: SO-8 package enables compact dual-device layout for redundant protection, with traceable sourcing per IPC-1752A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 12.5 mΩ @ -10 V; Qg = 22 nC; SO-8 with enhanced thermal pad | Higher gate charge increases driver loss; better thermal resistance (RθJA = 42°C/W vs. 50°C/W) | Preferred when board-level thermal management is prioritized over switching speed |
| DMG2307L-7 | RDS(on) = 25 mΩ @ -4.5 V; Qg = 11 nC; SOT-23 package (3 A rating) | Lower current rating and higher RDS(on); unsuitable for >5 A loads | Only viable for space-constrained, low-power auxiliary rails (<3 A) |
Compared with Si7157DP-T1-GE3 and DMG2307L-7, IRF9328PBF delivers optimal balance of low RDS(on), moderate gate charge, and SO-8 manufacturability-making it the preferred choice for industrial 12–24 V DC-DC designs requiring ≥10 A continuous current and proven avalanche reliability.
Availability
IRF9328PBF is available at Aetrix Electronics and suitable for DC-DC power conversion, motor control H-bridges, hot-swap sequencing, and telecom line card protection requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for IRF9328PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and manufacturing infrastructure.
The IRF9328PBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-reliability DC-DC conversion and motor drive applications in industrial and telecom environments.
FAQ
What is the maximum safe operating temperature for IRF9328PBF?
The IRF9328PBF has a specified junction temperature range of -55°C to +150°C. Under continuous operation with SO-8 mounting on 1-inch² copper, its thermal resistance RθJA is 50°C/W. To maintain TJ ≤ 125°C at full 12 A load, ambient must stay below 65°C or heatsinking must be added.
Does IRF9328PBF require a gate resistor for stability?
Yes-a 6.8 Ω gate resistor is recommended per Figure 20a in the datasheet to dampen ringing and prevent parasitic oscillation during fast switching. This value balances rise/fall time control (tr ≈ 57 ns, tf ≈ 66 ns) with gate driver stress reduction in 100–500 kHz applications.
Can IRF9328PBF be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) (0.021 V/°C) enables inherent current sharing. Parallel operation requires matched gate drive routing, symmetrical PCB layout, and individual gate resistors to avoid oscillation; up to four devices have been validated in 48 V telecom power modules.
Is the body diode suitable for continuous reverse conduction?
No-the body diode is rated for pulsed source current (ISM = -96 A) but only continuous source current (IS) of -2.5 A. For sustained reverse conduction, external Schottky diodes or synchronous rectification with complementary N-channel devices are required to avoid thermal runaway.
IRF9328PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 11.9mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 52 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1680 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF9328PBF FAQ
1.How can I place an order for IRF9328PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9328PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9328PBF reliable?
The price and inventory of IRF9328PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9328PBF is usually 5 days.
3.What payment methods are accepted for IRF9328PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9328PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9328PBF?
IRF9328PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9328PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9328PBF?
For technical support, including IRF9328PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9328PBF requirements.
6.How does Aetrix verify that IRF9328PBF is sourced from the original manufacturer or authorized distributors?
All IRF9328PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9328PBF meets industry standards.
7.What is the process for return or replacement of IRF9328PBF?
All IRF9328PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9328PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9328PBF part is unused and in its original packaging.
Return procedure for IRF9328PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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