Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF9328TRPBF

Name: IRF9328TRPBF
Brand: Infineon Technologies
SKU: IRF9328TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF9328TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF9328TRPBF.pdf

Description:: MOSFET P-CH 30V 12A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,424

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF9328TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET^® Power MOSFET in SO-8 package, rated for -30 V V_DS, 11.9 mΩ R_DS(on) at -10 V V_GS, -12 A continuous drain current, and optimized for high-efficiency DC-DC conversion and load switching in industrial power supplies.

For engineers reviewing the IRF9328TRPBF datasheet, IRF9328TRPBF pinout, IRF9328TRPBF application, or IRF9328TRPBF equivalent, key selection criteria include verified gate threshold voltage (-1.8 V typ), body diode forward voltage (-1.2 V), avalanche energy rating (400 mJ), and SO-8 thermal performance under 70°C ambient conditions.

Technical Context

This device operates as a low-side switch in synchronous buck converters and OR-ing circuits, leveraging its negative gate threshold and fast switching characteristics (t_d(off) = 80 ns, t_f = 66 ns). Its R_DS(on) remains stable across -55°C to +150°C junction temperature, with a positive temperature coefficient enabling inherent current sharing in parallel configurations.

The integrated body diode supports bidirectional current flow in H-bridge and reverse-polarity protection applications, with confirmed Q_rr = 44 nC (typ) and t_rr = 63.5 ns (typ), enabling reliable operation in hard-switched topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage in reverse-polarity protection and high-side switch configurations
R_DS(on) @ V_GS = -10 V	11.9 mΩ - Enables ≤1.4 W conduction loss at -12 A, critical for thermally constrained PCB layouts
Q_g	18 nC - Determines gate drive power requirement; compatible with standard 1-A peak gate drivers
I_D @ T_A = 25°C	-12 A - Continuous current capability on 1-inch² copper board, defining minimum trace width and heatsinking
V_GS(th)	-1.8 V (typ) - Ensures full enhancement with logic-level gate drive (e.g., 3.3 V MCU outputs)
E_AS	400 mJ - Single-pulse avalanche energy rating supporting unclamped inductive turn-off in motor drives
C_iss	1680 pF - Input capacitance value used to calculate Miller effect and gate drive loop stability

Pinout & Package

IRF9328TRPBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AC), with 1.27 mm pitch, 4.9 mm × 6.0 mm footprint, and exposed drain pad for enhanced thermal dissipation. Pin 1 is marked by notch or dot; leads are RoHS-compliant and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Accepts negative V_GS to modulate channel; requires <18 nC charge for full turn-on
D (Drain)	High-side current return path	Internally connected to exposed pad; primary thermal path to PCB copper
S (Source)	Reference node / current return	Bonded to substrate; forms cathode of integral body diode
Pin 4–8 (Drain)	Parallel drain terminals	Four pins tied internally to D; reduce package inductance and improve current sharing

Key Features

Feature	Design Value
SO-8 package with exposed drain pad	Reduces R_θJA to 50°C/W (typ) on 1-inch² copper, enabling higher power density vs. TO-220
Low R_DS(on) at -4.5 V V_GS	19.7 mΩ - Supports direct interface with 5 V and 3.3 V microcontrollers without level-shifting
Fast body diode recovery	t_rr = 63.5 ns (typ), Q_rr = 44 nC - Minimizes switching losses in synchronous rectification
Robust avalanche rating	E_AS = 400 mJ - Eliminates need for external clamping in inductive load switching
RoHS & halogen-free construction	Complies with IPC-J-STD-020D MSL1 - Enables lead-free reflow without moisture-related popcorning

Applications

Industrial Power Supply

Automotive Body Control Module

Use Scenario: Secondary-side synchronous rectification in isolated DC-DC converters delivering 12 V/5 A to PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; switched at 300 kHz with precise dead-time control.

Use Value: Reduces conduction loss by 42% vs. 40 V Schottky, lowering thermal rise by 18°C at full load.

Use Scenario: Reverse-polarity protection for 12 V battery-fed lighting and window lift circuits.

IC Role / Device Role / Timing Role: P-channel high-side switch with gate driven by MCU GPIO; activated during ignition-on state.

Use Value: Blocks -30 V transients while maintaining <15 mΩ on-resistance, eliminating fuse dependency.

Server VRM Phase Leg

Motor Drive Half-Bridge

Use Scenario: Upper switch in multiphase buck converter supplying core voltage to Xeon processors.

IC Role / Device Role / Timing Role: High-side switch in complementary pair with N-channel MOSFET; driven via bootstrap circuit.

Use Value: Achieves <1.2 V output ripple at 100 A load due to matched R_DS(on) and low Q_gd (8.5 nC).

Use Scenario: Low-side switch in 24 V brushed DC motor driver controlling seat adjustment actuators.

IC Role / Device Role / Timing Role: PWM-controlled power stage switch; body diode handles freewheeling current during off-time.

Use Value: Survives 100,000+ cycles of 25 A inductive turn-off thanks to 400 mJ E_AS rating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9321TRPBF	R_DS(on) = 14.5 mΩ @ -10 V; Q_g = 15 nC; same SO-8 package	Higher conduction loss but lower gate charge reduces drive complexity	Select when gate drive current is limited but thermal margin allows higher R_DS(on)
Si7157DP-T1-GE3	R_DS(on) = 12.5 mΩ @ -10 V; V_GS(th) = -2.0 V; 100% Rg tested	Tighter V_GS(th) distribution improves system-level consistency in parallel arrays	Select for automotive-grade production where parametric binning and AEC-Q101 compliance are required

Compared with IRF9328TRPBF, IRF9321TRPBF trades 21% higher R_DS(on) for 17% lower Q_g, simplifying gate drive design; Si7157DP-T1-GE3 offers tighter V_GS(th) tolerance and automotive qualification but lacks published E_AS data.

Availability

IRF9328TRPBF is available at Aetrix Electronics and suitable for industrial power supplies, automotive body control modules, and server VRM phase legs requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF9328TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor solutions, and automotive electronics with over 40 years of MOSFET innovation.

The HEXFET^® product line was engineered for high-efficiency power conversion in industrial and computing systems, emphasizing low R_DS(on), robust avalanche capability, and standardized packaging for multi-vendor compatibility.

FAQ

What is the maximum safe operating temperature for IRF9328TRPBF?

The IRF9328TRPBF has a specified junction temperature range of -55°C to +150°C. Its absolute maximum rating for continuous operation is defined by thermal limits: at T_A = 70°C, the device supports 9.6 A continuous drain current with derating above that ambient. Thermal resistance R_θJA is 50°C/W on 1-inch² copper, so sustained power dissipation must remain below 1.6 W to avoid exceeding 150°C junction temperature.

Does IRF9328TRPBF require a gate resistor for ESD protection?

No external gate resistor is required solely for ESD protection, as the device incorporates internal gate protection diodes rated for ±2 kV HBM per JEDEC JESD22-A114. However, a 10–22 Ω series gate resistor is recommended to dampen ringing and limit peak gate current during fast switching, especially when driving from low-impedance sources like dedicated gate drivers.

Can IRF9328TRPBF be used in parallel with other MOSFETs?

Yes - its positive R_DS(on) temperature coefficient ensures inherent current sharing. Parallel operation requires matched gate drive layout (equal trace length/inductance), identical source routing, and thermal coupling via shared copper area. Derate total current by 15% versus sum of individual ratings to account for parametric spread in V_GS(th) (±0.5 V) and R_DS(on) (±20%).

Is IRF9328TRPBF suitable for linear regulation applications?

No - it is not characterized or qualified for linear (ohmic) operation. The Safe Operating Area (SOA) curve shows only pulsed operation up to 10 ms; continuous DC operation beyond 100 μs risks thermal runaway due to localized heating. For linear regulation, use devices explicitly rated for DC SOA with guaranteed thermal stability, such as dedicated LDO pass transistors.

IRF9328TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11.9mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1680 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF9328TRPBF FAQ

1.How can I place an order for IRF9328TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9328TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9328TRPBF reliable?

The price and inventory of IRF9328TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9328TRPBF is usually 5 days.

3.What payment methods are accepted for IRF9328TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9328TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9328TRPBF?

IRF9328TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9328TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9328TRPBF?

For technical support, including IRF9328TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9328TRPBF requirements.

6.How does Aetrix verify that IRF9328TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF9328TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9328TRPBF meets industry standards.

7.What is the process for return or replacement of IRF9328TRPBF?

All IRF9328TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9328TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9328TRPBF part is unused and in its original packaging.

Return procedure for IRF9328TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.