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Infineon Technologies IRF9332PBF
- Part No.:
- IRF9332PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF9332PBF.pdf
- Description:
- MOSFET P-CH 30V 9.8A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,180
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Product details
Overview
IRF9332PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -30 V VDS, 17.5 mΩ RDS(on) at VGS = -10 V, and -9.8 A continuous drain current at TA = 25°C. It integrates a low-loss body diode and supports high-efficiency synchronous buck, load switch, and reverse-polarity protection circuits.
For engineers reviewing the IRF9332PBF datasheet, IRF9332PBF pinout, IRF9332PBF application, or IRF9332PBF equivalent, key selection criteria include verified -30 V breakdown voltage, gate threshold of -1.9 V (typ), 14 nC total gate charge, SO-8 thermal performance with RθJA = 102°C/W, and avalanche energy rating of 400 mJ (at IAS = -7.8 A).
Technical Context
This device operates as a logic-level compatible P-channel switch optimized for DC-DC converter high-side or load-switch configurations where fast turn-off and low conduction loss are critical. Its RDS(on) remains stable across -55°C to +150°C junction temperature range, with temperature coefficient of 0.021 V/°C for VBRDSS.
The integrated body diode exhibits 36 ns typical reverse recovery time and 20 nC Qrr at IF = -2.5 A, enabling reliable operation in inductive switching applications without external freewheeling diodes. Gate drive compatibility extends down to -4.5 V, delivering 28.1 mΩ RDS(on) under 3.3 V logic control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for automotive and industrial 24 V rail protection |
| RDS(on) @ VGS = -10 V | 17.5 mΩ - Enables ≤1.7 W conduction loss at -9.8 A continuous current |
| RDS(on) @ VGS = -4.5 V | 28.1 mΩ - Supports direct interface with 3.3 V microcontroller GPIOs |
| Qg (typ) | 14 nC - Allows <1 µs switching transitions with 15 mA gate driver peak current |
| ID @ TA = 25°C | -9.8 A - Sustains full-load current in compact SO-8 footprint without forced airflow |
| EAS | 400 mJ - Withstands unclamped inductive energy in motor drive fault conditions |
| VGS(th) | -1.9 V (typ) - Ensures reliable turn-on with standard logic-level gate drivers |
Pinout & Package
IRF9332PBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AC), with exposed drain pad for enhanced thermal dissipation. Dimensions: 4.9 × 6.0 × 1.75 mm (max height). Moisture sensitivity level: MSL1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Accepts negative VGS to modulate channel; threshold -1.9 V enables 3.3 V logic compatibility |
| D (Drain) | High-side power terminal | Internally connected to exposed copper pad; primary heat path to PCB ground plane |
| S (Source) | Reference node / return path | Bonded to pins 1–3 and 5–8; forms common reference for gate drive and load current return |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = -4.5 V, eliminating need for gate boost circuitry |
| Low gate charge | 14 nC Qg reduces switching losses and eases gate driver selection in high-frequency SMPS |
| Robust avalanche capability | Rated for 400 mJ single-pulse avalanche energy, supporting fault-tolerant power stage design |
| Integrated body diode | 36 ns trr and 20 nC Qrr enable efficient freewheeling in synchronous rectification |
| RoHS-compliant packaging | Lead-free, halogen-free SO-8 construction meets IPC/JEDEC J-STD-020D MSL1 requirements |
Applications
| DC-DC Converter High-Side Switch | Reverse Polarity Protection |
|---|---|
Use Scenario: Used as high-side switch in non-synchronous buck converters supplying 3.3 V or 5 V rails from 12–24 V inputs. IC Role / Device Role / Timing Role: P-channel MOSFET configured as active-high controlled switch; conducts when gate is pulled low relative to source. Use Value: 17.5 mΩ RDS(on) limits conduction loss to <1.7 W at 9.8 A, improving efficiency over discrete diode solutions. |
Use Scenario: Placed in series with VIN to block reverse-connected power sources in battery-powered instrumentation. IC Role / Device Role / Timing Role: Unidirectional current valve activated only during correct polarity; body diode blocks reverse current flow. Use Value: -30 V VDS rating ensures safe operation across 24 V systems with transient spikes; no external diode required. |
| Hot-Swap Load Switch | Motor Drive Brake Circuit |
Use Scenario: Controls power delivery to peripheral modules (e.g., USB-C PD accessories) with inrush current limiting. IC Role / Device Role / Timing Role: Soft-start enabled via gate RC network; functions as controlled power rail enable switch. Use Value: Low Qg (14 nC) allows precise slew-rate control using small gate resistors, preventing system brownouts. |
Use Scenario: Shorting motor terminals during dynamic braking in brushed DC motor controllers. IC Role / Device Role / Timing Role: Bidirectional current path through channel and body diode during regenerative braking phase. Use Value: 400 mJ EAS rating absorbs inductive kickback energy without failure during rapid deceleration events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 20 mΩ @ -10 V; Qg = 12.5 nC; SO-8 with thermally enhanced pad | Lower gate charge improves high-frequency switching but slightly higher on-resistance increases conduction loss | Preferred for >500 kHz SMPS where switching loss dominates; requires same PCB layout |
| DMG2305UVT-7 | RDS(on) = 42 mΩ @ -4.5 V; Qg = 8.5 nC; smaller SOT-23-6 package | Higher RDS(on) limits max current to ~4 A; reduced thermal mass restricts power handling | Valid for space-constrained, low-current (<4 A) load switches where SO-8 footprint is prohibitive |
Compared with Si7157DP-T1-GE3 and DMG2305UVT-7, IRF9332PBF delivers optimal balance of low RDS(on), robust avalanche rating, and SO-8 thermal performance-making it preferred for 5–10 A industrial load switching and 24 V DC-DC applications requiring reliability over miniaturization.
Availability
IRF9332PBF is available at Aetrix Electronics and suitable for DC-DC converter high-side switching, reverse polarity protection, and hot-swap load switching requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRF9332PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors, with global manufacturing and reliability validation per JEDEC JESD47F.
IRF9332PBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion and protection in automotive, industrial, and computing applications.
FAQ
What is the maximum junction temperature for continuous operation?
The IRF9332PBF has a specified operating junction temperature range of -55°C to +150°C. Continuous operation at TJ = 150°C is permitted provided power dissipation remains within derated limits-specifically, linear derating begins at 70°C ambient, with RθJA = 102°C/W on a 1-inch square copper board.
Does IRF9332PBF require a gate resistor for stability?
Yes-a gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 180 pF) and PCB trace inductance. Without it, overshoot exceeding ±20 V gate rating may occur during fast switching, risking long-term gate oxide degradation.
Can IRF9332PBF be used in parallel configurations?
Yes, but with strict layout symmetry: matched gate drive paths, Kelvin-source connections, and thermal coupling between devices. Its positive RDS(on) temperature coefficient (0.021 V/°C for VBRDSS) supports current sharing, though gate charge mismatch above 10% requires active balancing.
Is the body diode suitable for continuous freewheeling?
The integrated body diode supports continuous forward conduction up to -2.5 A (TJ = 25°C), with VSD = -1.2 V. For higher currents or elevated temperatures, external Schottky diode paralleling is advised due to increased forward voltage and reverse recovery charge (Qrr = 20–30 nC).
IRF9332PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 17.5mOhm @ 9.8A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1270 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF9332PBF FAQ
1.How can I place an order for IRF9332PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9332PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9332PBF reliable?
The price and inventory of IRF9332PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9332PBF is usually 5 days.
3.What payment methods are accepted for IRF9332PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9332PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9332PBF?
IRF9332PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9332PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9332PBF?
For technical support, including IRF9332PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9332PBF requirements.
6.How does Aetrix verify that IRF9332PBF is sourced from the original manufacturer or authorized distributors?
All IRF9332PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9332PBF meets industry standards.
7.What is the process for return or replacement of IRF9332PBF?
All IRF9332PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9332PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9332PBF part is unused and in its original packaging.
Return procedure for IRF9332PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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