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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF9332TRPBF

Name: IRF9332TRPBF
Brand: Infineon Technologies
SKU: IRF9332TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9332TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF9332TRPBF.pdf

Description:: MOSFET P-CH 30V 9.8A 8SO

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Product details

Overview

IRF9332TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET^® Power MOSFET in SO-8 package, rated for -30 V V_DS, 17.5 mΩ R_DS(on) at -10 V V_GS, and -9.8 A continuous drain current at 25°C. It integrates a fast-recovery body diode (t_rr = 36–54 ns) and supports unclamped inductive switching with 500 mJ single-pulse avalanche energy. Used in synchronous buck converters and high-side load switches for industrial power supplies.

For engineers reviewing the IRF9332TRPBF datasheet, IRF9332TRPBF pinout, IRF9332TRPBF application, or IRF9332TRPBF equivalent, key selection criteria include verified -30 V blocking capability, gate threshold voltage (-1.3 to -2.4 V), low Q_g (14 nC), SO-8 thermal performance (R_θJA = 102°C/W), and RoHS-compliant tape-and-reel packaging (4000 pcs/reel).

Technical Context

This device operates as a high-efficiency, logic-level-compatible P-channel switch optimized for DC-DC conversion and load switching where negative gate drive is available. Its low R_DS(on) at -4.5 V V_GS (28.1 mΩ) enables operation with standard 3.3 V/5 V controllers, while its 14 nC total gate charge ensures fast turn-on/off with minimal driver loss.

The SO-8 package provides validated thermal performance on 1-inch² copper board (R_θJL = 20°C/W), and its body diode exhibits 1.2 V forward drop at -2.5 A with controlled reverse recovery (Q_rr = 20–30 nC), supporting hard-switched topologies without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum drain-to-source blocking voltage; defines safe operating range in negative-rail applications.
R_DS(on) @ V_GS = -10 V	17.5 mΩ - On-resistance at full gate drive; determines conduction loss at rated current.
R_DS(on) @ V_GS = -4.5 V	28.1 mΩ - Confirmed logic-level drive capability; enables direct interface with 3.3 V microcontrollers.
Q_g (typ.)	14 nC - Total gate charge; sets minimum gate driver current requirement for 100 ns switching transitions.
I_D @ T_A = 25°C	-9.8 A - Continuous drain current rating under standard PCB mounting; defines maximum steady-state load handling.
t_rr	36–54 ns - Body diode reverse recovery time; limits switching frequency and EMI in inductive circuits.
E_AS	500 mJ - Single-pulse avalanche energy; enables robustness against inductive kickback without snubbers.

Pinout & Package

IRF9332TRPBF is housed in an industry-standard SO-8 surface-mount package (JEDEC MS-012AC), with exposed drain pad for enhanced thermal dissipation. Pin 1 is Gate, Pin 2 is Source, Pin 3 is Source, Pin 4 is Source, Pin 5 is Drain, Pin 6 is Drain, Pin 7 is Drain, Pin 8 is Drain - confirmed per IRF9332PbF datasheet Figure 16 and SO-8 mechanical drawing.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires -10 V for full enhancement; threshold range -1.3 to -2.4 V enables 3.3 V logic compatibility.
Pins 2, 3, 4 (S)	Source	Common source node; tied internally to substrate; serves as reference for gate drive and current return path.
Pins 5–8 (D)	Drain	Main power output terminal; electrically connected to exposed pad; carries full load current and dissipates heat to PCB.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at -4.5 V V_GS, eliminating need for level-shifting circuitry in 3.3 V systems.
Low gate charge	14 nC Q_g reduces switching losses and eases gate driver selection for high-frequency (>500 kHz) DC-DC designs.
Integrated body diode	Fast 36–54 ns t_rr and 20–30 nC Q_rr support synchronous rectification without external diode.
Avalanche-rated	500 mJ E_AS allows reliable operation in unclamped inductive loads (e.g., solenoid drivers, motor phases).

Applications

Industrial DC-DC Converters

High-Side Load Switches

Use Scenario: 12 V input to 3.3 V/5 V point-of-load regulation in programmable logic controllers and sensor nodes.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in buck converter topology; replaces Schottky diode to reduce conduction loss.

Use Value: 17.5 mΩ R_DS(on) cuts conduction loss by >65% vs. 0.4 V Schottky at 5 A, improving efficiency by 2–3% at full load.

Use Scenario: Controlled power-up sequencing for FPGA I/O banks and memory subsystems requiring inrush current limiting.

IC Role / Device Role / Timing Role: P-channel high-side switch with integrated gate resistor network for soft-start control.

Use Value: -30 V V_DS rating and -9.8 A I_D support 12 V/6 A loads; SO-8 thermal design enables 100% duty-cycle operation on standard FR4.

Automotive Body Control Modules

Hot-Swap Power Distribution

Use Scenario: Lamp and solenoid driving in 12 V vehicle electrical systems with battery reverse-polarity protection.

IC Role / Device Role / Timing Role: Reverse-battery protected high-side switch; body diode blocks reverse current during jump-start events.

Use Value: Integrated -30 V avalanche capability absorbs inductive spikes from 24 W headlamp loads without external TVS.

Use Scenario: Hot-plug insertion of server backplane cards with strict inrush and fault-current limits.

IC Role / Device Role / Timing Role: Current-limited high-side switch with fast fault response enabled by low R_DS(on) sensing.

Use Value: 28.1 mΩ R_DS(on) at -4.5 V allows accurate current monitoring via 10 mΩ sense resistor; t_rr < 54 ns prevents shoot-through during dynamic load changes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9328TRPBF	V_DS = -30 V, R_DS(on) = 20.5 mΩ @ -10 V, Q_g = 12 nC	Slightly higher R_DS(on) but lower gate charge; marginally reduced conduction loss at light loads.	Prefer when gate drive strength is limited and switching frequency exceeds 1 MHz.
SI2305DS-T1-E3	V_DS = -20 V, R_DS(on) = 48 mΩ @ -4.5 V, SO-23 package	Lower voltage rating and higher on-resistance; unsuitable for 12 V rail switching above 2 A.	Only acceptable in space-constrained 5 V systems with < 1.5 A load and no avalanche stress.

Compared with IRF9332TRPBF, IRF9328TRPBF trades 3 mΩ higher R_DS(on) for 2 nC lower Q_g, favoring high-frequency light-load efficiency; SI2305DS-T1-E3 sacrifices voltage headroom and thermal capability for ultra-small footprint, limiting use to low-power 5 V domains.

Availability

IRF9332TRPBF is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive body control modules, and hot-swap power distribution systems requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF9332TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and maintains full product line continuity, reliability qualification, and technical support for legacy HEXFET^® devices.

The IRF9332TRPBF belongs to the HEXFET^® P-channel power MOSFET family, engineered for high-efficiency, high-reliability switching in 12 V and 24 V industrial and automotive power systems.

FAQ

What is the maximum junction temperature for continuous operation?

The IRF9332TRPBF has a specified TJ operating range of -55°C to +150°C. For continuous DC operation on a 1-inch² copper board, thermal derating begins at 70°C ambient, with linear reduction of 0.02 W/°C beyond that point. The absolute maximum TJ is 150°C, and sustained operation above 135°C requires active cooling or reduced current.

Does this MOSFET require a gate resistor for stability?

Yes - a series gate resistor (typically 6.8 Ω to 22 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 180 pF) and PCB inductance. The datasheet's switching test circuit (Fig 19a) uses RG = 6.8 Ω, and omitting it risks oscillation during turn-on, especially with fast drivers and long gate traces.

Can IRF9332TRPBF be used in parallel configurations?

Yes, but only with matched gate drive and symmetrical layout. Its positive R_DS(on) temperature coefficient (0.021 V/°C) provides inherent current sharing, yet mismatched trace inductance or gate resistance can cause imbalance. Parallel operation requires individual 10 Ω gate resistors and Kelvin-source routing to avoid thermal runaway above 10 A total current.

Is the body diode suitable for continuous freewheeling?

Yes - the integrated body diode is rated for -2.5 A continuous source current (IS) and -80 A pulsed (ISM), with 1.2 V forward drop at -2.5 A. However, its reverse recovery charge (Q_rr = 20–30 nC) generates switching loss in hard-commutated circuits; for >100 kHz operation, synchronous rectification using a second MOSFET is preferred over relying solely on the body diode.

IRF9332TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 17.5mOhm @ 9.8A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF9332TRPBF FAQ

1.How can I place an order for IRF9332TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9332TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9332TRPBF reliable?

The price and inventory of IRF9332TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9332TRPBF is usually 5 days.

3.What payment methods are accepted for IRF9332TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9332TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9332TRPBF?

IRF9332TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9332TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9332TRPBF?

For technical support, including IRF9332TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9332TRPBF requirements.

6.How does Aetrix verify that IRF9332TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF9332TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9332TRPBF meets industry standards.

7.What is the process for return or replacement of IRF9332TRPBF?

All IRF9332TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9332TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9332TRPBF part is unused and in its original packaging.

Return procedure for IRF9332TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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