Infineon Technologies IRF9333PBF

Overview

IRF9333PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET^® Power MOSFET in SO-8 package, rated for -30 V V_DS, 19.4 mΩ R_DS(on) at -10 V V_GS, and -9.2 A continuous drain current at 25°C. It integrates a low-loss body diode and supports high-efficiency synchronous buck, load switch, and reverse polarity protection circuits in industrial power supplies and motor control modules.

For engineers reviewing the IRF9333PBF datasheet, IRF9333PBF pinout, IRF9333PBF application, or IRF9333PBF equivalent, key selection criteria include verified -30 V breakdown voltage, gate threshold of -1.8 V (typ), 14 nC total gate charge, body diode forward voltage of -1.2 V at -2.5 A, and SO-8 thermal resistance of 50 °C/W (junction-to-ambient on 1-inch² copper).

Technical Context

This device operates as a single N-channel logic-level compatible P-channel switch with fully specified avalanche energy rating (300 mJ at -2.1 A). Its gate threshold voltage (-1.3 to -2.4 V) enables direct drive from 3.3 V or 5 V microcontrollers without level shifting. The SO-8 footprint ensures multi-vendor board compatibility while supporting surface-mount reflow assembly.

Thermal performance is characterized by R_θJA = 50 °C/W (on 1-inch² copper) and R_θJL = 20 °C/W (junction-to-drain lead), enabling reliable operation up to 150°C junction temperature. Dynamic parameters-including 16 ns turn-on delay, 44 ns rise time, and 1110 pF input capacitance-are validated under -15 V V_DS, -4.5 V V_GS, and -7.5 A ID conditions.

Key Specifications

Pinout & Package

IRF9333PBF uses the industry-standard SO-8 (Small Outline-8) surface-mount package per EIA-481/EIA-541, with 1.27 mm pitch, 5.0 mm × 6.0 mm body, and exposed drain pad for thermal enhancement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with IRF9333PBF, IRF9328PBF trades marginal conduction loss for reduced gate drive demand, while Si2301DDS-T1-GE3 sacrifices current capacity and thermal performance for ultra-compact packaging-neither offers drop-in replacement capability without layout or thermal redesign.

Availability

IRF9333PBF is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, reverse polarity protection circuits, and hot-swap systems requiring stable component supply across extended product lifecycles.

Supply support for IRF9333PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF9333PBF belongs to Infineon's HEXFET^® Power MOSFET product line, engineered for high-reliability industrial and automotive power conversion where ruggedness, avalanche tolerance, and thermal stability are mandatory.

FAQ

What is the maximum safe operating temperature for IRF9333PBF?

The IRF9333PBF has a maximum junction temperature (T_J) of +150°C and a storage temperature range of -55°C to +150°C. When mounted on a 1-inch² copper board, its thermal resistance is 50°C/W (junction-to-ambient); derating begins above 70°C ambient, where continuous drain current drops to -7.3 A. Thermal design must ensure T_J remains below 150°C under worst-case power dissipation.

Does IRF9333PBF require a gate resistor, and if so, what value is recommended?

Yes, a gate resistor is required to control switching speed and suppress oscillation. A 6.8 Ω resistor is specified in the datasheet for unclamped inductive testing and provides optimal trade-off between EMI suppression and switching loss. For 3.3 V MCU drive, values between 4.7 Ω and 10 Ω are typical; lower values increase peak gate current but reduce turn-on time, while higher values slow switching and raise dynamic losses.

Can IRF9333PBF be used in parallel with identical devices?

Parallel operation is feasible but requires careful layout and gate drive design. The device exhibits positive temperature coefficient for R_DS(on), promoting current sharing, but mismatched trace inductance or gate resistance can cause imbalance. Use identical gate resistors, symmetrical PCB routing, and Kelvin-source connections. Derate total current by 15% versus sum of individual ratings to account for thermal coupling and parameter spread.

Is the body diode in IRF9333PBF suitable for synchronous rectification?

Yes-the integrated body diode is characterized for reverse recovery with t_rr = 24–36 ns and Q_rr = 15–23 nC at -2.5 A, making it suitable for synchronous rectification in buck converters up to ~500 kHz. However, its V_SD of -1.2 V is higher than Schottky diodes, so efficiency gain over discrete diodes occurs only when R_DS(on) conduction loss is lower than diode forward loss at the operating current and duty cycle.