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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF9333TRPBF

Name: IRF9333TRPBF
Brand: Infineon Technologies
SKU: IRF9333TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9333TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF9333TRPBF.pdf

Description:: MOSFET P-CH 30V 9.2A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF9333TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, rated for -30 V V_DS, 19.4 mΩ R_DS(on) at -10 V V_GS, 14 nC typical Q_g, and -9.2 A continuous drain current at 25°C. It integrates a robust body diode and supports high-efficiency synchronous buck, load switch, and reverse polarity protection circuits in industrial power supplies.

For engineers reviewing the IRF9333TRPBF datasheet, IRF9333TRPBF pinout, IRF9333TRPBF application, or IRF9333TRPBF equivalent, key selection criteria include verified -30 V breakdown voltage, gate threshold of -1.8 V (typ), SO-8 thermal performance (R_θJA = 50 °C/W), avalanche energy rating (E_AS = 300 mJ), and RoHS-compliant tape-and-reel packaging (4000 pcs/reel).

Technical Context

This device operates as a low-side switching element with negative gate control logic, requiring V_GS ≤ -2.4 V to fully enhance. Its transconductance (g_fs = 13 S) and low Q_gd/Q_gs ratio (6.4 nC / 3.5 nC) support fast, low-loss switching in DC-DC converters up to 1 MHz.

The integrated body diode exhibits V_SD = -1.2 V at -2.5 A and t_rr = 24 ns (typ), enabling efficient freewheeling in hard-switched topologies. Thermal design relies on SO-8's 20 °C/W junction-to-drain lead resistance when mounted on copper board.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage before avalanche conduction; defines safe operation in 24 V rail systems.
R_DS(on) @ V_GS = -10 V	19.4 mΩ - Conduction loss of 1.6 W at -9.2 A; enables <1% efficiency drop in 12 V/5 A load switches.
Q_g (typ)	14 nC - Gate drive energy requirement for full turn-on; determines minimum driver peak current (≥1.4 A for 10 ns rise time).
I_D @ T_A = 25°C	-9.2 A - Continuous current capability with SO-8 package on 1-inch² copper; sets thermal derating baseline.
V_GS(th)	-1.8 V (typ) - Threshold voltage where channel begins conducting; ensures reliable turn-on with standard -3.3 V or -5 V logic drivers.
E_AS	300 mJ - Single-pulse avalanche energy; supports unclamped inductive switching in motor drives without external snubbers.

Pinout & Package

IRF9333TRPBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AC), with 1.27 mm pitch, 4.9 mm × 6.0 mm body, and exposed drain pad for thermal enhancement. Pin 1 is gate, Pin 2–3 are source, Pin 4–5–6–7–8 are drain (common tab).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires negative voltage relative to source to conduct; sensitive to ESD (±20 V max V_GS).
Pins 2 & 3 (S)	Source	Reference node for gate drive and current return path; tied to system ground in low-side configurations.
Pins 4–8 (D)	Drain	Main power output terminal; electrically and thermally connected to exposed copper pad; carries full load current and dissipates heat.

Key Features

Feature	Design Value
SO-8 footprint compatibility	Enables drop-in replacement across multi-vendor designs without PCB rework or layout change.
Low R_DS(on) at -4.5 V V_GS	32.5 mΩ - Supports logic-level gate drive from 3.3 V microcontrollers without level-shifting circuitry.
Fast switching with low Q_gd	6.4 nC - Reduces Miller plateau duration, minimizing overlap losses in high-frequency PWM stages.
Robust body diode	t_rr = 24 ns, Q_rr = 15 nC - Limits reverse recovery losses and EMI in synchronous rectification applications.

Applications

Industrial Power Supply

Automotive Body Control Module

Use Scenario: Secondary-side synchronous rectification in isolated 24 V input DC-DC converters delivering 5 V/10 A to PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; switched at 300 kHz with complementary gate drive.

Use Value: Reduces conduction loss by 42% vs. 40 V/10 A Schottky, improving efficiency from 89% to 93% at full load.

Use Scenario: Reverse polarity protection for 12 V battery-fed lighting and window lift circuits in passenger vehicles.

IC Role / Device Role / Timing Role: High-side protected switch (with external charge pump) preventing damage during jump-start or battery reversal.

Use Value: Withstands -30 V reverse battery condition while maintaining <20 mΩ on-resistance, limiting voltage drop to <200 mV at 8 A.

Server VRM Load Switch

Smart Energy Meter Power Path

Use Scenario: Hot-swap power sequencing for dual-core processor voltage regulator outputs in telecom servers.

IC Role / Device Role / Timing Role: Inrush current limiter and fault-isolation switch controlled by PMBus-compatible sequencer.

Use Value: Q_g = 14 nC enables precise 500 ns turn-on delay control; R_DS(on) stability over -40 to +125°C ensures consistent droop across temperature.

Use Scenario: Isolated backup power path switching between main AC supply and supercapacitor bank in DIN-rail energy meters.

IC Role / Device Role / Timing Role: Bidirectional load switch managing power flow direction during grid outage and recharge cycles.

Use Value: Body diode forward voltage of -1.2 V at -2.5 A enables efficient capacitor charging without external diode; SO-8 creepage meets IEC 62053 creepage requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9328TRPBF	V_DS = -30 V, R_DS(on) = 22.5 mΩ @ -10 V, Q_g = 12.5 nC	Lower gate charge reduces drive loss but higher R_DS(on) increases conduction loss above 6 A.	Prefer for <5 A, high-frequency (>500 kHz) switching where gate drive loss dominates.
SI4435DY-T1-E3	V_DS = -30 V, R_DS(on) = 20 mΩ @ -10 V, Q_g = 22 nC, SO-8 with enhanced thermal pad	Higher Q_g demands stronger gate driver; improved R_θJA (40 °C/W) supports higher ambient temps.	Prefer for thermally constrained environments >85°C ambient or where tighter thermal margin is required.

Compared with IRF9333TRPBF, IRF9328TRPBF trades conduction efficiency for faster switching, while SI4435DY-T1-E3 prioritizes thermal reliability over gate drive simplicity-making IRF9333TRPBF optimal for balanced 24 V industrial loads operating at 25–70°C ambient.

Availability

IRF9333TRPBF is available at Aetrix Electronics and suitable for industrial power supplies, automotive body control modules, server VRM load switches, and smart energy meter power paths requiring stable component supply and long-term manufacturability.

Supply support for IRF9333TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with vertical manufacturing and rigorous AEC-Q101 qualification.

The HEXFET Power MOSFET product line delivers optimized P- and N-channel discrete transistors for high-efficiency, high-reliability power conversion in industrial, automotive, and computing applications-designed for ruggedness, low R_DS(on), and fast switching under real-world thermal and electrical stress.

FAQ

What is the maximum safe operating temperature for IRF9333TRPBF?

The IRF9333TRPBF has a maximum junction temperature (T_J) of +150°C and storage temperature range of -55°C to +150°C. When mounted on a 1-inch² copper board, its thermal resistance is R_θJA = 50°C/W. Derating begins above 70°C ambient, with linear reduction of 20 mW/°C beyond that point per the datasheet's derating curve.

Does IRF9333TRPBF require a gate resistor in typical applications?

Yes-a gate resistor (typically 6.8 Ω to 22 Ω) is recommended to dampen ringing and control dV/dt during switching. The device's Q_g = 14 nC and low C_iss = 1110 pF make it susceptible to oscillation without proper gate drive impedance; values below 5 Ω risk excessive peak current and EMI, while values above 47 Ω degrade switching speed unnecessarily.

Can IRF9333TRPBF be used in parallel configurations?

Yes, but only with careful attention to layout symmetry and gate drive matching. Its positive R_DS(on) temperature coefficient (0.019 V/°C) provides inherent current sharing, yet mismatched trace inductance or gate resistance can cause imbalance. Parallel use requires identical PCB routing, Kelvin-source connections, and individual gate resistors to ensure <10% current deviation at full load.

Is IRF9333TRPBF suitable for linear (analog) operation?

No-it is not characterized or guaranteed for linear mode operation. The Safe Operating Area (SOA) graph shows limited DC capability (≤10 W at V_DS = -10 V), and prolonged operation in the linear region risks thermal runaway due to localized heating. It is designed exclusively for switching applications with defined pulse widths and duty cycles.

IRF9333TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 19.4mOhm @ 9.2A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1110 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF9333TRPBF FAQ

1.How can I place an order for IRF9333TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9333TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9333TRPBF reliable?

The price and inventory of IRF9333TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9333TRPBF is usually 5 days.

3.What payment methods are accepted for IRF9333TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9333TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9333TRPBF?

IRF9333TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9333TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9333TRPBF?

For technical support, including IRF9333TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9333TRPBF requirements.

6.How does Aetrix verify that IRF9333TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF9333TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9333TRPBF meets industry standards.

7.What is the process for return or replacement of IRF9333TRPBF?

All IRF9333TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9333TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9333TRPBF part is unused and in its original packaging.

Return procedure for IRF9333TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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