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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF9335PBF

Name: IRF9335PBF
Brand: Infineon Technologies
SKU: IRF9335PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9335PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF9335PBF.pdf

Description:: MOSFET P-CH 30V 5.4A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF9335PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET^® Power MOSFET in SO-8 package, designed for high-efficiency DC-DC conversion and load switching. It delivers -30 V V_DS, 59 mΩ R_DS(on) at -10 V V_GS, 9.1 nC typical Q_g, and -5.4 A continuous drain current at 25°C - enabling compact, low-loss synchronous buck topologies in industrial power supplies.

For engineers reviewing the IRF9335PBF datasheet, IRF9335PBF pinout, IRF9335PBF application, or IRF9335PBF equivalent, key selection criteria include verified P-channel SO-8 gate drive compatibility, body diode recovery performance (t_rr = 14–21 ns), and thermal derating behavior under pulsed load conditions on 1-inch² copper board.

Technical Context

This device operates as a high-side or common-source switch in DC-DC converters and battery protection circuits, leveraging its negative threshold voltage (-1.3 to -2.4 V) and low gate charge for fast turn-on with standard logic-level drivers. Its integrated body diode supports bidirectional current flow in H-bridge configurations and exhibits controlled reverse recovery (Q_rr = 7.4–11 nC).

The SO-8 package provides dual-sided thermal path capability, with R_θJA = 50°C/W (max) and R_θJL = 20°C/W (typ), allowing direct mounting to PCB copper for enhanced power dissipation. Avalanche-rated (E_AS = 450 mJ at I_D = -4.3 A), it sustains unclamped inductive switching stress without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage in high-side switch applications
R_DS(on) @ -10 V V_GS	59 mΩ - Enables ≤0.17 W conduction loss at -5.4 A continuous current
R_DS(on) @ -4.5 V V_GS	110 mΩ - Supports 3.3 V logic-level gate drive with predictable on-resistance
Q_g (typ)	9.1 nC - Determines gate driver current requirement (~1.8 mA avg for 500 kHz switching)
t_r/t_f	19 ns / 15 ns - Enables <100 ns total switching transitions at moderate loads
t_rr	14–21 ns - Limits shoot-through risk in synchronous rectification when paired with N-channel counterpart
E_AS	450 mJ - Withstands single-pulse inductive energy without failure in unclamped tests

Pinout & Package

IRF9335PBF uses the JEDEC MS-012AA-compliant SO-8 surface-mount package (4.0 × 5.0 mm footprint, 1.27 mm lead pitch), with exposed drain pad for thermal enhancement and dual-side soldering capability.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires -10 V to fully enhance; threshold range -1.3 to -2.4 V
2 (S)	Source	Reference node for gate drive; tied to positive rail in high-side configuration
3 (D)	Drain	Main current output; internally connected to pins 4, 5, 6, 7, and 8 for low-inductance parallel conduction
4 (D)	Drain	Parallel drain connection; reduces package resistance and improves thermal spreading
5 (D)	Drain	Parallel drain connection; contributes to 2.5 W P_D rating at 25°C ambient
6 (D)	Drain	Parallel drain connection; electrically identical to pins 3, 4, 5, 7, 8
7 (S)	Source	Secondary source connection; improves current sharing and reduces bond wire inductance
8 (S)	Source	Secondary source connection; used for Kelvin sensing or low-noise gate return in precision designs

Key Features

Feature	Design Value
P-channel enhancement mode	Enables high-side switching without level-shifting circuitry in 3.3 V/5 V systems
RoHS-compliant, lead-free construction	Meets IPC-J-STD-020D MSL1 handling requirements; no post-reflow baking needed
Low gate charge (9.1 nC typ)	Reduces driver power consumption and enables use of low-cost SOT-23 gate drivers
Integrated body diode with fast recovery	Supports synchronous rectification in buck converters without external Schottky diode
Avalanche-rated (450 mJ E_AS)	Eliminates need for external clamping in inductive load switching applications

Applications

Industrial DC-DC Converters

Hot-Swap Controllers

Use Scenario: 12 V input to 3.3 V/5 V point-of-load regulation in programmable logic controllers and motor drives.

IC Role / Device Role: High-side synchronous rectifier in dual-MOSFET buck stage, replacing discrete diode.

Use Value: Reduces conduction loss by >60% vs. Schottky diode, lowering thermal load on 2-layer PCBs.

Use Scenario: Inrush current limiting and fault isolation in 24 V backplane power distribution.

IC Role / Device Role: Load switch controlling power delivery to hot-pluggable modules.

Use Value: Fast turn-off (t_f = 15 ns) limits fault energy during short-circuit events.

Battery Protection Circuits

Automotive Body Control Modules

Use Scenario: Reverse polarity and overcurrent protection in 12 V lead-acid and LiFePO₄ battery packs.

IC Role / Device Role: P-channel high-side switch in charge/discharge path with integrated body diode.

Use Value: Body diode forward voltage (V_SD = -1.2 V) ensures safe reverse-current blocking without external components.

Use Scenario: Power management for interior lighting, window lifters, and seat controls in 12 V vehicle systems.

IC Role / Device Role: Low-voltage load switch interfacing microcontroller GPIOs to resistive/inductive loads.

Use Value: -4.5 V V_GS compatibility allows direct drive from automotive MCUs with 3.3 V I/O rails.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7416PBF	R_DS(on) = 32 mΩ @ -10 V; Q_g = 12 nC; SO-8 package	Higher current density but slower switching due to higher gate charge	Preferred where lower conduction loss dominates over switching loss (e.g., 100 kHz or lower PWM)
Si7157DP-T1-GE3	R_DS(on) = 48 mΩ @ -10 V; Q_g = 7.5 nC; thermally enhanced SO-8	Lower gate charge improves efficiency in high-frequency (>1 MHz) DC-DC stages	Chosen when minimizing driver losses and improving light-load efficiency is critical

Compared with IRF9335PBF, IRF7416PBF offers lower R_DS(on) at cost of higher Q_g, while Si7157DP-T1-GE3 trades marginal R_DS(on) increase for significantly reduced gate drive demand - making it more suitable for ultra-high-frequency operation.

Availability

IRF9335PBF is available at Aetrix Electronics and suitable for industrial DC-DC converters, hot-swap controllers, and battery protection circuits requiring stable component supply across multi-year production cycles.

Supply support for IRF9335PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support its legacy HEXFET^® portfolio with full qualification and reliability data.

The IRF9335PBF belongs to the HEXFET^® P-channel power MOSFET product line, engineered for robustness in industrial power conversion and load switching - emphasizing avalanche ruggedness, thermal stability, and compatibility with standard logic-level gate drivers.

FAQ

What is the maximum junction temperature for continuous operation?

The IRF9335PBF has a specified operating junction temperature range of -55°C to +150°C. For reliable long-term operation, junction temperature must remain below 150°C under worst-case ambient and power dissipation conditions. Derating begins at 70°C ambient, with linear reduction of continuous current to -4.3 A at that point per datasheet absolute maximum ratings.

Can IRF9335PBF be used in synchronous rectification with an N-channel MOSFET?

Yes - IRF9335PBF is commonly paired with N-channel counterparts like IRF3710 or Si7850DP in synchronous buck converters. Its body diode t_rr (14–21 ns) and Q_rr (7.4–11 nC) enable clean commutation when timed correctly, though dead-time control must prevent shoot-through due to asymmetric gate thresholds.

Is IRF9335PBF suitable for automotive applications?

While not AEC-Q101 qualified, IRF9335PBF meets key electrical and thermal requirements for non-safety-critical automotive body electronics. Its -40°C to +125°C guaranteed operating range, avalanche rating, and RoHS compliance support use in interior lighting and accessory control modules - subject to customer-level qualification.

How does the SO-8 package's multi-drain/multi-source pin configuration affect layout?

The parallel drain (pins 3–6) and source (pins 2,7,8) connections reduce package inductance and improve thermal spreading. Layout best practice requires symmetric copper pour under all drain pins and separate low-impedance source return paths to minimize ground bounce and ensure uniform current sharing across internal die bonds.

IRF9335PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 5.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 59mOhm @ 5.4A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 10µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 386 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF9335PBF FAQ

1.How can I place an order for IRF9335PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9335PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9335PBF reliable?

The price and inventory of IRF9335PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9335PBF is usually 5 days.

3.What payment methods are accepted for IRF9335PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9335PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9335PBF?

IRF9335PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9335PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9335PBF?

For technical support, including IRF9335PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9335PBF requirements.

6.How does Aetrix verify that IRF9335PBF is sourced from the original manufacturer or authorized distributors?

All IRF9335PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9335PBF meets industry standards.

7.What is the process for return or replacement of IRF9335PBF?

All IRF9335PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9335PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9335PBF part is unused and in its original packaging.

Return procedure for IRF9335PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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