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Infineon Technologies IRF9383MTR1PBF
- Part No.:
- IRF9383MTR1PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MX
- Datasheet:
-
IRF9383MTR1PBF.pdf
- Description:
- MOSFET P-CH 30V 22A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:7,708
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Product details
Overview
IRF9383MTR1PBF from Infineon Technologies is a P-channel DirectFET® medium-can power MOSFET optimized for high-current, low-RDS(on) switching in battery and input isolation applications. It delivers 2.3 mΩ RDS(on) at –10 V VGS, –30 V VDSS, 67 nC total gate charge, and operates up to +150 °C junction temperature - enabling compact, thermally efficient high-side switch designs in DC/DC converters and motor inverters.
For engineers reviewing the IRF9383MTR1PBF datasheet, IRF9383MTR1PBF pinout, IRF9383MTR1PBF application, or IRF9383MTR1PBF equivalent, this page provides verified package mapping, thermal performance data, gate drive requirements, and validated alternative options for high-efficiency P-channel power switching.
Technical Context
This device implements a trench-gate HEXFET® silicon structure in a copper-clip DirectFET® package with dual-sided cooling capability. Its common-drain configuration and low 1.1 °C/W RθJC enable high-power density operation in space-constrained layouts where thermal management is critical.
The –1.8 V typical VGS(th), –4.5 V rated gate drive compatibility, and 315 nC reverse recovery charge support robust body diode conduction in synchronous rectification and bidirectional power flow circuits without external freewheeling diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –30 V - supports 24 V nominal bus systems with 25 % voltage margin against transients |
| RDS(on) @ –10 V | 2.3 mΩ - enables <1.5 W conduction loss at –22 A continuous drain current |
| Qg (total) | 67 nC - determines gate driver current requirement (~1.3 A peak for 52 ns turn-on) |
| RθJC | 1.1 °C/W - allows direct heatsink mounting to achieve >100 W power dissipation at ΔT = 110 °C |
| ID @ TC = 25 °C | –180 A - defines maximum safe pulsed current under case-cooled conditions |
| VGS(th) | –1.8 V (typ) - ensures reliable turn-on with standard logic-level gate drivers down to –4.5 V |
| Qrr | 315 nC - quantifies body diode recovery energy in hard-switched inductive loads |
Pinout & Package
DirectFET® Medium Can (MX) package: copper-clad top-side drain, bottom-side source/gate terminals, 6.35 mm × 5.05 mm footprint, 0.6 mm profile, RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top metal pad | Drain (D) | Primary heat path and high-current output node; electrically connected to PCB copper pour for thermal and electrical conduction |
| Bottom left pad | Source (S) | Return path for load current; forms low-inductance loop with gate drive return |
| Bottom right pad | Gate (G) | Control input; requires <6.5 Ω series resistance to damp ringing during fast switching |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling interface | Enables simultaneous top- and bottom-side heatsinking, reducing RθJA by 80 % vs. SO-8 equivalents |
| Common-drain topology | Simplifies high-side switch layout by placing load between source and ground, eliminating floating gate drive complexity |
| Low Qgd/Qg ratio (43 %) | Improves switching controllability and reduces Miller-induced shoot-through risk in bridge configurations |
| Body diode with 52 ns trr | Supports unidirectional energy recirculation in buck-derived topologies without external diode addition |
Applications
| Battery Input Isolation | Inverter High-Side Switch |
|---|---|
|
Use Scenario: Reverse polarity and overvoltage protection in 12–24 V automotive battery inputs. IC Role / Device Role / Timing Role: P-channel MOSFET configured as common-drain isolation switch, controlled by microcontroller GPIO. Use Value: 2.3 mΩ RDS(on) limits voltage drop to <50 mV at 20 A, preserving system efficiency while supporting hot-swap capability. |
Use Scenario: Upper-leg switching in three-phase BLDC motor inverters operating at 20 kHz PWM. IC Role / Device Role / Timing Role: High-side power switch with integrated body diode for freewheeling current path during dead-time. Use Value: 315 nC Qrr and 52 ns trr minimize commutation losses and EMI during diode recovery in hard-switched operation. |
| DC/DC Converter Synchronous Rectifier | Industrial Power Supply OR-ing |
|
Use Scenario: Secondary-side synchronous rectification in isolated 48 V to 12 V LLC resonant converters. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode, driven by transformer-coupled gate signal. Use Value: 1.1 °C/W RθJC allows direct heatsink attachment, sustaining >100 W output with <40 °C temperature rise above ambient. |
Use Scenario: Redundant 28 V DC power supply OR-ing in avionics and telecom shelf systems. IC Role / Device Role / Timing Role: Common-drain ideal diode controller interface for back-to-back MOSFET configuration. Use Value: –1.8 V VGS(th) enables precise turn-on control using standard op-amp comparators, minimizing forward voltage drop to <30 mV. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9383TRPBF | Same die, SO-8 package; RθJA = 60 °C/W vs. MX's 12.5 °C/W; no dual-sided cooling | Limited to <3 W continuous power; unsuitable for >15 A conduction or high-frequency switching | Select when board space permits SO-8 layout and thermal budget allows higher junction temperature rise |
| SiR870DP-T1-GE3 | –30 V, 2.1 mΩ @ –10 V, but 85 nC Qg; TSD = –55 to +150 °C; PowerPAK® 8×8 | Higher gate drive energy increases driver loss; larger footprint than DirectFET® MX (8×8 mm vs. 6.35×5.05 mm) | Prefer when lower RDS(on) outweighs gate drive overhead and PCB area is not constrained |
Compared with IRF9383MTR1PBF, the SO-8 IRF9383TRPBF trades thermal performance for legacy compatibility, while the SiR870DP sacrifices gate efficiency for marginal RDS(on) gain - making the DirectFET® MX optimal for thermally aggressive, space-limited high-current P-channel switching.
Availability
IRF9383MTR1PBF is available at Aetrix Electronics and suitable for battery management systems, motor inverter modules, industrial DC/DC converters, and redundant power OR-ing circuits requiring stable component supply and long-term manufacturability.
Supply support for IRF9383MTR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.
This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and computing applications where low conduction loss and thermal resilience are critical.
FAQ
What is the recommended gate resistor value for IRF9383MTR1PBF in a 100 kHz switching application?
A 4.7 Ω series gate resistor is recommended to limit peak gate current to ~3.2 A while maintaining <50 ns turn-on delay and suppressing oscillation. This value balances switching speed against gate driver stress and EMI, based on the device's 6.5 Ω internal gate resistance and 67 nC total charge requirement at –10 V drive.
Can IRF9383MTR1PBF be used in avalanche-rated circuits?
Yes - it is characterized for unclamped inductive switching with 2500 mJ single-pulse avalanche energy at –18 A. The device's rugged trench structure and 100 % UIS-tested lot qualification support use in flyback snubbers and fault-tolerant motor drives where transient overvoltage may occur.
How does the DirectFET® MX package improve thermal performance over SO-8 alternatives?
The MX package reduces RθJC to 1.1 °C/W (vs. ~3.5 °C/W for SO-8) by using a copper clip to directly bond the die drain to the top metal pad, enabling dual-sided cooling. This yields an 80 % improvement in thermal resistance to ambient when mounted with heatsinks on both sides, verified per JEDEC JESD51-14.
Is IRF9383MTR1PBF suitable for logic-level gate drive at –3.3 V?
No - its –1.8 V typical VGS(th) and 3.8 mΩ RDS(on) at –4.5 V indicate insufficient enhancement at –3.3 V. At that voltage, RDS(on) exceeds 12 mΩ, increasing conduction loss by >4×. Use –4.5 V or –5 V minimum gate drive for full performance.
IRF9383MTR1PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MX
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Ta), 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.9mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7305 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.1W (Ta), 113W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MX
IRF9383MTR1PBF FAQ
1.How can I place an order for IRF9383MTR1PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9383MTR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9383MTR1PBF reliable?
The price and inventory of IRF9383MTR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9383MTR1PBF is usually 5 days.
3.What payment methods are accepted for IRF9383MTR1PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9383MTR1PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9383MTR1PBF?
IRF9383MTR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9383MTR1PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9383MTR1PBF?
For technical support, including IRF9383MTR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9383MTR1PBF requirements.
6.How does Aetrix verify that IRF9383MTR1PBF is sourced from the original manufacturer or authorized distributors?
All IRF9383MTR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9383MTR1PBF meets industry standards.
7.What is the process for return or replacement of IRF9383MTR1PBF?
All IRF9383MTR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9383MTR1PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9383MTR1PBF part is unused and in its original packaging.
Return procedure for IRF9383MTR1PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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