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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF9392TRPBF

Name: IRF9392TRPBF
Brand: Infineon Technologies
SKU: IRF9392TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9392TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF9392TRPBF.pdf

Description:: MOSFET P-CH 30V 9.8A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF9392TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET power MOSFET in SO-8 package, rated for -30 V V_DS, 17.5 mΩ R_DS(on) at -10 V V_GS, -9.8 A continuous drain current at 25°C, and optimized for high-side switching in DC-DC converters and load switches. It integrates a robust body diode with 36 ns typical reverse recovery time and supports unclamped inductive switching up to 500 mJ single-pulse avalanche energy.

For engineers reviewing the IRF9392TRPBF datasheet, IRF9392TRPBF pinout, IRF9392TRPBF application, or IRF9392TRPBF equivalent, key selection criteria include verified -30 V blocking capability, SO-8 thermal performance under 70°C ambient, gate charge of 27 nC at -4.5 V drive, and compatibility with 3.3 V/5 V logic-level controllers via -2.4 V typical V_GS(th).

Technical Context

This MOSFET operates as a voltage-controlled unidirectional switch with negative gate threshold (-1.3 to -2.4 V), requiring inverted drive logic for high-side configuration. Its low R_DS(on) and 1270 pF C_iss enable efficient 100–500 kHz switching in synchronous buck converters and hot-swap circuits.

Thermal design relies on junction-to-ambient resistance of 50 °C/W (on 1-inch² copper board) and linear derating above 70°C ambient. Avalanche ruggedness is characterized per JEDEC JESD24-1, with E_AS = 500 mJ at I_AS = -7.8 A and T_J = 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Supports rail voltages up to 24 V DC with 25% margin against transients
R_DS(on) max	17.5 mΩ @ V_GS = -10 V - Limits conduction loss to ≤1.7 W at -9.8 A continuous
I_D cont	-9.8 A @ T_A = 25°C - Sustains full-load current in compact SO-8 without forced air
Q_g	27 nC @ V_DS = -15 V, V_GS = -4.5 V - Determines gate driver current requirement (~2.7 mA avg at 100 kHz)
V_GS(th)	-1.3 to -2.4 V - Enables direct interface with 3.3 V microcontrollers using simple level-shifting
E_AS	500 mJ - Withstands unclamped inductive turn-off in motor drivers and solenoid controls
C_iss	1270 pF - Sets Miller plateau duration and influences gate drive loop stability

Pinout & Package

IRF9392TRPBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AC), with 1.27 mm pitch, 4.9 mm × 6.0 mm footprint, and exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate	Control terminal; requires negative voltage relative to source to turn on; 18 Ω internal gate resistance limits dV/dt-induced ringing
D (Pins 2–5, 7–8)	Drain	Main current path output; pins 2–5 and 7–8 are internally paralleled for lower inductance and higher current handling
S (Pin 6)	Source	Reference node for gate drive; body diode anode; connects to system ground or load return in high-side configuration

Key Features

Feature	Design Value
SO-8 footprint	Enables drop-in replacement across multi-vendor designs without PCB rework
RoHS-compliant lead-free finish	Meets IPC-J-STD-020D MSL1 moisture sensitivity, eliminating bake requirements before reflow
Body diode t_rr	36 ns typical - Reduces switching losses in synchronous rectification and bidirectional current paths
V_GS(max)	±25 V - Allows safe operation with transient clamping circuits and gate protection zeners
Linear derating factor	0.02 W/°C above 70°C ambient - Enables predictable thermal budgeting in sealed enclosures

Applications

DC-DC Synchronous Buck Converter

Hot-Swap Controller

Use Scenario: High-efficiency 12 V to 3.3 V conversion in telecom power supplies with 200 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling input rail connection; body diode provides freewheeling path during low-side conduction.

Use Value: 17.5 mΩ R_DS(on) reduces conduction loss by 35% versus comparable -20 V MOSFETs, improving full-load efficiency to >92%.

Use Scenario: Inrush current limiting for 24 V backplane insertion in industrial PLC modules.

IC Role / Device Role / Timing Role: Load switch isolating downstream circuitry; gate driven by dedicated hot-swap controller (e.g., LTC4215).

Use Value: -30 V rating accommodates 24 V +25% surge margin; 500 mJ E_AS prevents failure during cable short-circuit events.

Motor Driver Half-Bridge

USB Power Delivery Switch

Use Scenario: Bidirectional 12 V brushed DC motor control in battery-powered robotics with PWM duty cycle < 80%.

IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge topology; body diode conducts reverse current during PWM off-time.

Use Value: 36 ns t_rr minimizes shoot-through risk and reduces snubber component count in compact motor driver PCBs.

Use Scenario: VBUS switching in USB-C PD 3.0 compliant portable chargers supporting 20 V/5 A profiles.

IC Role / Device Role / Timing Role: Reverse-polarity protected power path switch enabling dual-role port negotiation.

Use Value: -2.4 V V_GS(th) ensures reliable turn-on with 3.3 V logic from PD controller, eliminating external level shifters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2301DDS-T1-GE3	R_DS(on) = 115 mΩ @ -4.5 V; V_DS = -20 V; SO-8 package	Limited to ≤12 V systems; higher conduction loss at same current	Select when cost-sensitive, low-power (<1 A) load switching is required and 20 V rating suffices
IRF7424TRPBF	R_DS(on) = 28 mΩ @ -10 V; V_DS = -30 V; SO-8 package; 100% R_g tested	Higher R_DS(on) increases conduction loss by ~60% at -9.8 A	Choose when tighter gate resistance tolerance (18 ±2 Ω) is critical for timing-critical synchronous rectifiers

Compared with Si2301DDS-T1-GE3 and IRF7424TRPBF, IRF9392TRPBF delivers the lowest R_DS(on) among SO-8 P-channel devices rated for -30 V, making it optimal for high-current, thermally constrained 24 V industrial loads where efficiency and junction temperature rise must be minimized.

Availability

IRF9392TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, motor drivers, and USB PD power path management requiring stable component supply and long-term industrial availability.

Supply support for IRF9392TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors with rigorous automotive-grade reliability testing and global manufacturing scale.

The HEXFET product line targets high-efficiency power conversion in industrial, computing, and telecom infrastructure, emphasizing low R_DS(on), fast switching, and rugged avalanche performance in standard packages.

FAQ

What is the maximum safe operating temperature for IRF9392TRPBF?

The junction temperature must not exceed +150°C under steady-state or transient conditions. At 70°C ambient, the device dissipates 1.6 W before derating begins; thermal resistance is 50°C/W on 1-inch² copper, so proper heatsinking or airflow is required above 1.2 W sustained power dissipation.

Can IRF9392TRPBF be driven directly from a 3.3 V microcontroller GPIO?

Yes - its V_GS(th) range (-1.3 to -2.4 V) ensures turn-on with 3.3 V logic when used in high-side configuration with source tied to V_IN; however, a negative gate driver or charge pump is needed to achieve full enhancement (-10 V) for minimum R_DS(on).

Does IRF9392TRPBF have integrated ESD protection?

No - it lacks on-chip ESD protection diodes. External gate protection (e.g., 12 V zener between gate and source) is recommended in systems exposed to human contact or connector mating cycles to prevent gate oxide damage from >±25 V transients.

Is the body diode suitable for continuous reverse conduction?

The body diode supports continuous source current up to -2.5 A (T_J = 25°C) and pulsed current up to -80 A, but its forward voltage is -1.2 V at -2.5 A. For high-duty-cycle reverse conduction, a parallel Schottky diode is advised to reduce power loss and thermal stress.

IRF9392TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V, 20V

Rds On (Max) @ Id, Vgs:: 12.1mOhm @ 7.8A, 20V

Vgs(th) (Max) @ Id:: 2.4V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 4.5 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF9392TRPBF FAQ

1.How can I place an order for IRF9392TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9392TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9392TRPBF reliable?

The price and inventory of IRF9392TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9392TRPBF is usually 5 days.

3.What payment methods are accepted for IRF9392TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9392TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9392TRPBF?

IRF9392TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9392TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9392TRPBF?

For technical support, including IRF9392TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9392TRPBF requirements.

6.How does Aetrix verify that IRF9392TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF9392TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9392TRPBF meets industry standards.

7.What is the process for return or replacement of IRF9392TRPBF?

All IRF9392TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9392TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9392TRPBF part is unused and in its original packaging.

Return procedure for IRF9392TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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