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Infineon Technologies IRF9393PBF
- Part No.:
- IRF9393PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF9393PBF.pdf
- Description:
- MOSFET P-CH 30V 9.2A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,559
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Product details
Overview
IRF9393PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -30 V VDS, ±25 V VGS, 19.4 mΩ RDS(on) at -10 V VGS, -9.2 A continuous drain current at 25°C, and optimized for high-side switching in notebook PC adapter input stages.
For engineers reviewing the IRF9393PBF datasheet, IRF9393PBF pinout, IRF9393PBF application, or IRF9393PBF equivalent, key selection criteria include verified gate threshold voltage (-1.3 to -2.4 V), avalanche energy rating (up to 360 mJ), body diode reverse recovery charge (15–23 nC), and SO-8 thermal performance under pulsed load conditions.
Technical Context
This device operates as a normally-off, voltage-controlled power switch with a negative gate drive requirement. Its P-channel architecture enables direct high-side configuration without level-shifting circuitry, and its low RDS(on) minimizes conduction loss in 12–24 V DC input rails.
The integrated body diode supports synchronous rectification and unclamped inductive switching, with characterized reverse recovery time (24–36 ns) and Qrr (15–23 nC). Thermal resistance RθJA is 50 °C/W on 1-inch2 copper board, enabling stable operation up to 150°C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for 24 V nominal input systems with 20% margin |
| RDS(on) max | 19.4 mΩ @ VGS = -10 V - Enables ≤1.7 W conduction loss at -9.2 A continuous load |
| ID cont | -9.2 A @ TA = 25°C - Supports >100 W adapter input switching with derating |
| Qg | 25 nC - Determines gate driver current requirement for <100 ns switching transitions |
| EAS | 360 mJ - Specifies single-pulse avalanche robustness during inductive turn-off transients |
| VGS(th) | -1.3 to -2.4 V - Ensures reliable turn-on with standard -3.3 V or -5 V logic-level gate drivers |
| Ciss | 1110 pF - Impacts high-frequency gate drive loop stability and EMI filtering design |
Pinout & Package
IRF9393PBF is housed in an industry-standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads for enhanced thermal dissipation. Pin numbering follows standard SO-8 orientation (pin 1 marked by notch or dot).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires negative voltage relative to source to turn on; 15 Ω internal gate resistance limits dV/dt-induced ringing |
| 2 (S) | Source | Reference node for gate drive; tied to positive rail in high-side configuration; carries full load current |
| 3 (S) | Source | Second source connection; paralleled internally to reduce source inductance and improve current sharing |
| 4 (S) | Source | Third source connection; further lowers source loop inductance for fast switching stability |
| 5 (D) | Drain | Main power output; connected to load or next stage; electrically tied to exposed pad for thermal path |
| 6 (D) | Drain | Second drain connection; reduces drain inductance and improves current distribution across package |
| 7 (D) | Drain | Third drain connection; enhances thermal coupling to PCB copper pour |
| 8 (D) | Drain | Fourth drain connection; completes low-inductance, high-current drain path to ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Direct logic-level gate drive | Operates fully enhanced with -4.5 V VGS, eliminating need for gate driver ICs in 5 V/3.3 V control systems |
| Low RDS(on) × Qg figure of merit | 19.4 mΩ × 25 nC = 485 mΩ·nC - balances conduction and switching losses for high-efficiency SMPS |
| Robust avalanche capability | Rated for 360 mJ single-pulse energy - withstands inductive kickback in adapter hot-swap and fault events |
| Enhanced body diode performance | Qrr = 15–23 nC and trr = 24–36 ns - reduces switching loss and EMI in synchronous buck or OR-ing configurations |
| RoHS-compliant SO-8 package | Lead-free, halogen-free construction with MSL1 moisture sensitivity - supports lead-free reflow and long-term reliability |
Applications
| Adapter Input Switching | Hot-Swap Protection Circuit |
|---|---|
Use Scenario: High-side switching in AC/DC adapter input stage for notebook PCs, controlling 19–24 V DC input before primary regulation. IC Role / Device Role / Timing Role: P-channel power switch enabling controlled inrush current limiting and input disconnection during overvoltage or thermal faults. Use Value: Low RDS(on) minimizes dropout and heat generation; avalanche rating ensures survival during line transients and plug/unplug events. | Use Scenario: Redundant power supply OR-ing and hot-swap insertion in industrial backplanes and telecom shelves. IC Role / Device Role / Timing Role: Reverse-polarity protected, low-loss power path switch that isolates failed supplies while maintaining system uptime. Use Value: Fast body diode recovery and low Qrr reduce cross-conduction loss; SO-8 footprint allows compact dual-MOSFET layout for redundancy. |
| USB-C PD Input Protection | High-Side Load Switch |
Use Scenario: Input protection switch for USB-C Power Delivery receivers handling variable 5–20 V input voltages. IC Role / Device Role / Timing Role: Programmable high-side disconnect switch with controlled slew rate to prevent bus voltage collapse during insertion. Use Value: Gate threshold range (-1.3 to -2.4 V) enables compatibility with common -3.3 V enable signals; SO-8 thermal performance sustains 5 A continuous loads. | Use Scenario: Controlled power delivery to FPGA, DSP, or memory subsystems requiring sequenced or fault-isolated supply rails. IC Role / Device Role / Timing Role: Standalone high-side load switch implementing soft-start, current limit, and thermal shutdown via external resistor networks. Use Value: Verified RDS(on) tolerance and TJ-dependent VGS(th) drift (-5.7 mV/°C) support accurate current sense calibration across temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 22 mΩ @ -10 V; Qg = 21 nC; SO-8; lower EAS (220 mJ) | Lower peak avalanche energy; tighter VGS(th) distribution but higher RDS(on) | Preferred where gate drive current is constrained and avalanche stress is minimal |
| DMG2305U-7 | RDS(on) = 42 mΩ @ -4.5 V; Qg = 12 nC; SOT-23; no exposed drain pad | Smaller package, lower cost, but 2.3× higher RDS(on) and limited thermal capacity | Suitable for space-constrained, low-power (<3 W) load switches with moderate duty cycle |
Compared with Si7157DP-T1-GE3 and DMG2305U-7, IRF9393PBF delivers superior thermal performance and avalanche ruggedness in SO-8, making it optimal for adapter input and hot-swap roles where reliability under transient stress is critical.
Availability
IRF9393PBF is available at Aetrix Electronics and suitable for notebook PC adapter input switching, industrial hot-swap protection, and USB-C PD input protection requiring stable component supply and long-lifecycle availability.
Supply support for IRF9393PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with heritage from International Rectifier's power MOSFET innovation.
The IRF9393PBF belongs to the HEXFET® P-channel power MOSFET product line, engineered specifically for high-reliability, high-efficiency DC input switching in portable computing and industrial power systems.
FAQ
What is the maximum safe operating temperature for IRF9393PBF?
The IRF9393PBF has a specified junction temperature range of -55°C to +150°C. Its absolute maximum rating for continuous operation is 150°C, with thermal derating beginning at 25°C ambient. On a 1-inch² copper board, RθJA is 50°C/W, allowing ~2.4 W dissipation before reaching 150°C junction temperature under steady-state conditions.
Can IRF9393PBF be driven directly from a 3.3 V microcontroller GPIO?
No - IRF9393PBF is a P-channel MOSFET requiring a negative gate-to-source voltage to turn on. A 3.3 V GPIO alone cannot produce the required -3.3 V or lower VGS; instead, it must be used with a level-shifting circuit or a dedicated gate driver that generates a negative gate voltage relative to the source node, typically referenced to the switched rail.
Does IRF9393PBF have an integrated ESD protection diode?
No - the IRF9393PBF does not include on-die ESD protection structures beyond standard process-level gate oxide robustness. Its gate oxide is rated for ±25 V VGS, but external TVS or RC snubbers are recommended for gate protection in systems exposed to human-body-model (HBM) or IEC 61000-4-2 ESD events, especially in adapter input locations.
How does the body diode performance compare to discrete Schottky alternatives?
The integrated body diode has VSD ≈ -1.2 V at -2.5 A and trr = 24–36 ns, which is slower and higher forward drop than typical Schottky diodes (e.g., 0.4–0.6 V, <10 ns). However, its monolithic integration eliminates layout parasitics and enables precise timing alignment with MOSFET switching - advantageous in synchronous rectification where Qrr matching matters more than absolute VF.
IRF9393PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V, 20V
- Rds On (Max) @ Id, Vgs:
- 13.3mOhm @ 9.2A, 20V
- Vgs(th) (Max) @ Id:
- 2.4V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1110 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF9393PBF FAQ
1.How can I place an order for IRF9393PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9393PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9393PBF reliable?
The price and inventory of IRF9393PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9393PBF is usually 5 days.
3.What payment methods are accepted for IRF9393PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9393PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9393PBF?
IRF9393PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9393PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9393PBF?
For technical support, including IRF9393PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9393PBF requirements.
6.How does Aetrix verify that IRF9393PBF is sourced from the original manufacturer or authorized distributors?
All IRF9393PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9393PBF meets industry standards.
7.What is the process for return or replacement of IRF9393PBF?
All IRF9393PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9393PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9393PBF part is unused and in its original packaging.
Return procedure for IRF9393PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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